Uwe Seidel
Infineon Technologies
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Publication
Featured researches published by Uwe Seidel.
Microelectronic Engineering | 2000
H Helneder; Heinrich Körner; Andrea Mitchell; Markus Schwerd; Uwe Seidel
Modern interconnect schemes will be using copper instead of aluminum as metallization material due to its better electrical conductivity and its superior electromigration resistance. Using a production worthy BICMOS process it could be revealed that especially for this kind of application a copper dual damascene metallization offers serious advantages versus an aluminum RIE/tungsten plug approach. Interconnect parameters which are very helpful for high-performance RF technologies like line and via resistances can be reduced showing equal leakage current properties. Current density can be increased and up to now no impact on Bipolar and only slight influence on CMOS devices, which needs to be investigated in more detail, is detected.
Archive | 2010
Albert Birner; Uwe Hoeckele; Thomas Kunstmann; Uwe Seidel
Archive | 2012
Wolfgang Klein; Uwe Seidel; Stefan Barzen; Mohsin Nawaz; Wolfgang Friza; Xu Cheng; Alfons Dehe
Archive | 2010
Rainer Leuschner; Gunther Mackh; Uwe Seidel
Archive | 1995
Uwe Seidel; Rainer Braun
Archive | 2009
Uwe Seidel; Thorsten Obernhuber; Albert Birner; Georg Ehrentraut
Archive | 2009
Albert Birner; Uwe Hoeckele; Thomas Kunstmann; Uwe Seidel
Archive | 2009
Uwe Seidel; Thorsten Obernhuber; Albert Birner; Georg Ehrentraut
Archive | 2013
Gabriele Bettineschi; Uwe Seidel; Wolfgang Walter; Michael Schrenk; Hubert Werthmann
Archive | 2009
Rainer Leuschner; Gunther Mackh; Uwe Seidel