V. L. Kobelev

Electric conductivity and dielectric permittivity of mixed electronic–ionic conductivity compounds (BS)1−x(DAsS2)x (B=Ge, Pb; D=Ag, Cu)

Abstract The temperature dependencies of the electrical conductivity and dielectric permittivity of (BS) 1− x (DAsS 2 ) x (B=Ge, Pb; D=Ag, Cu) were investigated by means of impedance measurements in the frequency range between 10 −2 and 10 5 Hz and at temperatures between 78 and 500 K. In all chalcogenides, ionic conductivity (Ag + or Cu + ) was found. The onset of ionic transport was found at 115–120 K for AgGeAsS 3 and 110–115 K for CuGeAsS 3 . The complex impedance and admittance plots, the electrical properties and the X-ray structure data are given.

Determination of the temperature of the onset of ion transport from the temperature dependence of the relative change in the ultrasound velocity in the lithium ceramic Li-Si-Ge-As-S-O

An ultrasonic method is used to study the onset of ion transport inlithium oxides in a ceramic of the Li-Si-Ge-As-S-O system. The onset temperature for ion transport estimated from the temperature dependence of the relative change in the propagation speed of ultrasound is the same as that obtained by other methods, which indicates that the ultrasonic method is applicable to studies of the onset of ion conductivity inlithium oxide semiconductors.