V. Le Borgne

Pulsed Laser Ablation based Direct Synthesis of Single‐Wall Carbon Nanotube/PbS Quantum Dot Nanohybrids Exhibiting Strong, Spectrally Wide and Fast Photoresponse

Pulsed laser ablation for the direct synthesis of single-wall carbon nanotube/PbS-quantumdot(SWCNT/PbS-QD) nanohybrids is demonstrated. The latitude of the developed pulsed laser deposition process permits not only the control of the size of the PbS-QDs but also the straightforward integration of these novel SWCNT/PbS-QD nanohybrids into photoconductive (PC) devices. Thus, by optimizing the nanohybrid characteristics, PC devices exhibiting not only fast but also strong photoresponse (as high as 1350% at 405 nm) are achieved.

Photocurrent generation in random networks of multiwall-carbon-nanotubes grown by an “all-laser” process

We report photocurrent generation in entangled networks of multiwall-carbon nanotubes (MWCNTs) grown on TiN/Si substrates by an all-laser process. By integrating these MWCNTs into planar devices, we demonstrate that they generate photocurrent over all the visible and near-ultraviolet range, with maximum efficiency around 420 nm. Photocurrent is obtained even at zero applied voltage, pointing to a true photovoltaic (PV) effect. The extracted photocurrent as a function of applied voltage exhibits nonlinear behavior for voltages ≥2 V, suggesting that the devices do not behave as pure photoresistances. Other mechanisms (e.g., Schottky barriers imbalance) are invoked to describe current flow in these PV devices.

Enhanced photocurrent generation from UV-laser-synthesized-single-wall-carbon-nanotubes/n-silicon hybrid planar devices

We report on the significant generation of photocurrent (PC) from planar devices built from the drop casting of UV-laser-synthesized single-wall-carbon-nanotubes (SWCNTs) onto n-Si substrate. These SWCNTs/n-Si hybrid devices are shown to generate PC with external quantum efficiencies (EQE) reaching up to ∼10%. Their EQE has been optimized by controlling the amount of deposited SWCNTs, and is shown to be significantly enhanced over all the spectral range with a pronounced boost (up to ∼25× times) around 460 nm. The extension of the photoresponse of these devices toward UV correlates well with the absorbance of SWCNTs.

Field electron emission enhancement of graphenated MWCNTs emitters following their decoration with Au nanoparticles by a pulsed laser ablation process

A plasma-enhanced chemical vapor deposition (PECVD) process was adapted to alter the growth of multiwall carbon nanotubes (MWCNTs) so that graphene sheets grow out of their tips. Gold nanoparticle (Au-NP) decoration of graphenated MWCNTs (g-MWCNTs) was obtained by subsequent decoration by a pulsed laser deposition (PLD) process. By varying the number of laser ablation pulses (N(Lp)) in the PLD process, we were able to control the size of the gold nanoparticles and the surface coverage of the decorated g-MWCNTs. The presence of Au-NPs, preferentially located at the tip of the g-MWCNTs emitters, is shown to significantly improve the field electron emission (FEE) properties of the global g-MWCNT/Au-NP nanohybrid films. Indeed, the electric field needed to extract a current density of 0.1 μA cm(-)(2) from the g-MWCNT/Au-NP films was decreased from 2.68 V μm(-1) to a value as low as 0.96 V μm(-1). On the other hand, UV photoelectron spectroscopy (UPS) characterization revealed a decrease in the global work function of the Au-decorated g-MWCNT nanohybrids compared to that of bare g-MWCNT emitters. Surprisingly, the work function of g-MWCNT was found to decrease from 4.9 to 4.7 eV with the addition of Au-NPs-a value lower than the work function of both materials worth 5.2 and 4.9 eV for gold and g-MWCNT, respectively. Our results show that the N(Lp) dependence of the FEE characteristics of the g-MWCNT/Au-NP emitters correlates well with their work function changes. Fowler-Nordheim-theory-based calculations suggest that the significant FEE enhancement of the emitters is also caused by the Au-NPs acting as nanoscale electric field enhancers.

Figure of merit based maximization of the quantum efficiency of (single-wall-carbon-nanotubes/n-type silicon) hybrid photovoltaic devices

We report on a rational approach to optimize the photovoltaic (PV) properties of devices based on the hetero-nanojunctions formed between single wall carbon nanotubes (SWCNTs) films and n-silicon. By qualifying the optoelectronic properties of the SWCNT film through a figure of merit (FoM), we were able to correlate the latter to both the external quantum (EQE) and power conversion (PCE) efficiencies of associated PV devices. The established correlation guided us to achieve EQE values as high as ∼55%. Furthermore, it is found that higher FoM figures (≥3 × 10−6 Ω−1) lead to higher EQE and PCE values (with an increase of 15% and 2% per decade, respectively). Finally, by optimizing the EQE of the SWCNTs based PV devices and further doping them, we have achieved PCE values as high as ∼4%.

4H-SiC P+N UV Photodiodes : A Comparison between Beam and Plasma Doping Processes

This paper presents a study of 4H-SiC UV photodetectors based on p+n thin junctions. Two kinds of p+ layers have been implemented, aiming at studying the influence of the junction elaborated by the ion implantation process (and the subsequent annealing) on the device characteristics. Aluminum and Boron dopants have been introduced by beam line and by plasma ion implantation, respectively. Dark currents are lower with Al-implanted diodes (2 pA/cm2 @ - 5 V). Accordingly to simulation results concerning the influence of the junction thickness and doping, plasma B-implanted diodes give rise to the best sensitivity values (1.5x10-1 A/W @ 330 nm).

Growth Mechanisms of Inductively-Coupled Plasma Torch Synthesized Silicon Nanowires and their associated photoluminescence properties

Ultra-thin Silicon Nanowires (SiNWs) were produced by means of an industrial inductively-coupled plasma (ICP) based process. Two families of SiNWs have been identified, namely long SiNWs (up to 2–3 micron in length) and shorter ones (~100 nm). SiNWs were found to consist of a Si core (with diameter as thin as 2 nm) and a silica shell, of which the thickness varies from 5 to 20 nm. By combining advanced transmission electron microscopy (TEM) techniques, we demonstrate that the growth of the long SiNWs occurred via the Oxide Assisted Growth (OAG) mechanism, while the Vapor Liquid Solid (VLS) mechanism is responsible for the growth of shorter ones. Energy filtered TEM analyses revealed, in some cases, the existence of chapelet-like Si nanocrystals embedded in an otherwise silica nanowire. Such nanostructures are believed to result from the exposure of some OAG SiNWs to high temperatures prevailing inside the reactor. Finally, the intense photoluminescence (PL) of these ICP-grown SiNWs in the 620–950 nm spectral range is a clear indication of the occurrence of quantum confinement. Such a PL emission is in accordance with the TEM results which revealed that the size of nanostructures are indeed below the exciton Bohr radius of silicon.