V. V. Mkhitaryan

Disorder-induced tail states in gapped bilayer graphene

The instanton approach to the in-gap fluctuation states is applied to the spectrum of biased bilayer graphene. It is shown that the density of states falls off with energy measured from the band-edge as

One-dimensional plasmons confined in bilayer graphene p-n junctions

\nu(\epsilon)\propto \exp(-|\epsilon/\epsilon_t|^{3/2})

Localized States due to Expulsion of Resonant Impurity Levels from the Continuum in Bilayer Graphene

, where the characteristic tail energy,

Localization properties of random-mass Dirac fermions from real-space renormalization group.

\epsilon_t

Fermi-edge singularity in the vicinity of the resonant scattering condition.

, scales with the concentration of impurities,

Weakly chiral networks and two-dimensional delocalized states in a weak magnetic field

n_i

Quantum site percolation on triangular lattice and the integer quantum Hall effect

, as

Resonant finite-size impurities in graphene, unitary limit, and Friedel oscillations

n_i^{2/3}

Phase diagram of the weak-magnetic-field quantum Hall transition quantified from classical percolation

. While the bare energy spectrum is characterized by two energies: the bias-induced gap,

Microscopic description of a quantum Hall transition without landau levels.

V