Valentin Felix

Origin of microplasma instabilities during DC operation of silicon based microhollow cathode devices

The failure mechanisms of micro hollow cathode discharges (MHCD) in silicon have been investigated using their I-V characteristics, high speed photography and scanning electron microscopy. Experiments were carried out in helium. We observed I–V instabilities in the form of rapid voltage decreases associated with current spikes. The current spikes can reach values more than 100 times greater than the average MHCD current. (The peaks can be more than 1 Ampere for a few 10’s of nanoseconds.) These current spikes are correlated in time with 3–10 μm diameter optical flashes that occur inside the cavities. The SEM characterizations indicated that blister-like structures form on the Si surface during plasma operation. Thin Si layers detach from the surface in localized regions. We theorize that shallow helium implantation occurs and forms the ‘blisters’ whenever the Si is biased as the cathode. These blisters ‘explode’ when the helium pressure inside them becomes too large leading to the transient micro-arcs seen in both the optical emission and the I–V characteristics. We noted that blisters were never found on the metal counter electrode, even when it was biased as the cathode (and the Si as the anode). This observation led to a few suggestions for delaying the failure of Si MHCDs. One may coat the Si cathode (cavities) with blister resistant material; design the MHCD array to operate with the Si as the anode rather than as the cathode; or use a gas additive to prevent surface damage. Regarding the latter, tests using SF6 as the gas additive successfully prevented blister formation through rapid etching. The result was an enhanced MHCD lifetime.

Ignition dynamics of dry-etched vertical cavity single-hole microdischarge reactors in ac regime operating in noble gases

Silicon-based multi-cavity microdischarge reactors allow the generation of large-area uniform glow discharges over a wide pressure range up to atmospheric pressure. These devices, fabricated using micro electro-mechanical system technology, have shown complex interactions between the individual cavities. To discriminate these interactions, devices with only one shallow vertical cavity are studied here. Operation characteristics are investigated using electrical and optical analysing techniques. The spatial and temporal dynamics of the discharge are investigated for positive and negative voltage polarity of the applied ac voltage ramp by phase-resolved imaging. Within each voltage half-period, emission from the single cavity shows repetitive pulsing features and distinct spatial distributions. In the positive half-period, ring-shaped structures develop, while the negative half-period is distinguished by a bell-shaped intensity distribution. Effects of pressure and operation frequency on the spatial and temporal intensity profiles are discussed.

Circular Emission and Destruction Patterns on a Silicon-Based Microdischarge Array

Silicon-based microdischarge arrays are of high interest as they enable nonthermal plasmas at atmospheric pressure. However, due to their small dimensions, they are highly sensitive to instabilities that can lead to the destruction of the confining structures. The damage, in particular of the top dielectric surface of these devices, can be directly correlated with a destructive operation mode. Images present the emission and destruction structures, which both show a circular pattern along the edges of the cavities.