Valentin Serban Teodorescu

Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride

The electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride is studied by measuring the voltage and temperature dependences of the current. The microstructure of the network is investigated by cross-sectional transmission electron microscopy. The multi-walled carbon nanotube network has an uniform spatial extension in the silicon nitride matrix. The current-voltage and resistance-temperature characteristics are both linear, proving the metallic behavior of the network. The I-V curves present oscillations that are further analyzed by computing the conductance-voltage characteristics. The conductance presents minima and maxima that appear at the same voltage for both bias polarities, at both 20 and 298 K, and that are not periodic. These oscillations are interpreted as due to percolation processes. The voltage percolation thresholds are identified with the conductance minima.

Nanostructuring of GeTiO amorphous films by pulsed laser irradiation

Summary Laser pulse processing of surfaces and thin films is a useful tool for amorphous thin films crystallization, surface nanostructuring, phase transformation and modification of physical properties of thin films. Here we show the effects of nanostructuring produced at the surface and under the surface of amorphous GeTiO films through laser pulses using fluences of 10–30 mJ/cm2. The GeTiO films were obtained by RF magnetron sputtering with 50:50 initial atomic ratio of Ge:TiO2. Laser irradiation was performed by using the fourth harmonic (266 nm) of a Nd:YAG laser. The laser-induced nanostructuring results in two effects, the first one is the appearance of a wave-like topography at the film surface, with a periodicity of 200 nm and the second one is the structure modification of a layer under the film surface, at a depth that is related to the absorption length of the laser radiation. The periodicity of the wave-like relief is smaller than the laser wavelength. In the modified layer, the Ge atoms are segregated in spherical amorphous nanoparticles as a result of the fast diffusion of Ge atoms in the amorphous GeTiO matrix. The temperature estimation of the film surface during the laser pulses shows a maximum of about 500 °C, which is much lower than the melting temperature of the GeTiO matrix. GeO gas is formed at laser fluences higher than 20 mJ/cm2 and produces nanovoids in the laser-modified layer at the film surface. A glass transition at low temperatures could happen in the amorphous GeTiO film, which explains the formation of the wave-like topography. The very high Ge diffusivity during the laser pulse action, which is characteristic for liquids, cannot be reached in a viscous matrix. Our experiments show that the diffusivity of atomic and molecular species such as Ge and GeO is very much enhanced in the presence of the laser pulse field. Consequently, the fast diffusion drives the formation of amorphous Ge nanoparticles through the segregation of Ge atoms in the GeTiO matrix. The nanostructuring effects induced by the laser irradiation can be used in functionalizing the surface of the films.

The periodic character of the microtwin bandwidth distribution in YBa2Cu3O7−x

A statistical study of the microtwin domains in a standard ceramic sample of YBa2Cu3O7−x has been performed on transmission electron microscopy images. This study has evidenced a periodic character of the width distribution of twin lamellae, with maximum periodicity of about 30 nm. The presence of these maxima has been attributed to a local structural mechanism, independent of grain size, which operates in the tetragonal‐orthorhombic transformation, beside the normal stress relaxation mechanism.

Synthesis of sheet conductive layers on the surface of some insulator ceramics (TiO2, ZrO2, HfO2) by multipulse CO2‐laser irradiation in an ammonia atmosphere

It is shown that by multipulse TEA‐CO2 laser irradiation of some insulator ceramic samples (TiO2, ZrO2, HfO2) in an ammonia atmosphere, surface layers are synthesized exhibiting a complicated morphology and having a complex structure containing, beside metallic nitrides, nonstoichiometric oxygen‐depleted oxides, oxinitrides, etc. Such layers have a diminished sheet resistance, and display good conduction characteristics.

Ambiguous Role of Growth-Induced Defects on the Semiconductor-to-Metal Characteristics in Epitaxial VO2/TiO2 Thin Films

Controlling the semiconductor-to-metal transition temperature in epitaxial VO2 thin films remains an unresolved question both at the fundamental as well as the application level. Within the scope of this work, the effects of growth temperature on the structure, chemical composition, interface coherency and electrical characteristics of rutile VO2 epitaxial thin films grown on TiO2 substrates are investigated. It is hereby deduced that the transition temperature is lower than the bulk value of 340 K. However, it is found to approach this value as a function of increased growth temperature even though it is accompanied by a contraction along the V4+-V4+ bond direction, the crystallographic c-axis lattice parameter. Additionally, it is demonstrated that films grown at low substrate temperatures exhibit a relaxed state and a strongly reduced transition temperature. It is suggested that, besides thermal and epitaxial strain, growth-induced defects may strongly affect the electronic phase transition. The results of this work reveal the difficulty in extracting the intrinsic material response to strain, when the exact contribution of all strain sources cannot be effectively determined. The findings also bear implications on the limitations in obtaining the recently predicted novel semi-Dirac point phase in VO2/TiO2 multilayer structures.

Preparation and electrical characterization of SiGe nanostructures

This paper presents the preparation and investigation of structure and electrical properties of nanostructures consisting of Si1−xGex nanocrystals. Nanostructures were prepared by RF magnetron sputtering, followed by thermal annealing. X-ray diffraction, TEM, high resolution TEM and SAED measurements were performed. Current-voltage and current-temperature characteristics were taken. Nanostructures have different electrical behavior. Current-voltage curves are linear, while current-temperature curves are dependent on the annealing temperature. In films annealed at 650°C, electrical transport is controlled by quantum confinement effect and localized states (current-temperature characteristics), while in films annealed at 900°C it is controlled by tunneling of thermally activated carriers between neighboring nanocrystals.

Growth of polycrystalline hydroxyapatite thin films by pulsed laser deposition and subsequent heat treatment in air

Hydroxyapatite (HA), Ca10(PO4)6(OH)2, is the primary constituent of the human bone and one of the best biocompatible materials. In this work we developed a simple method for the deposition of polycrystalline HA thin films onto various collectors including substrates of medical interest (e.g. Ti). We proceeded by the pulsed laser deposition of HA targets onto parallel collectors placed at (2-5) cm in vacuum. After deposition the films were heated in air at 500 degree(s)C for 30 minutes. The heated film has a structure which appears in electron diffraction as identical to the structure of the base material. The obtained films are uniform and very adherent to the substrate. The P/Ca atomic ratio, determined by energy dispersive X-ray analysis, was found to be close to that characteristic to HA, for the post-depositing heated films.

Influence of preparation conditions on structure and photosensing properties of GeSi/TiO 2 multilayers

The photosensing properties related to the structure of GeSi/TiO2 multilayers prepared under different conditions are studied. TiO2 cap/(GeSi/TiO2)2 multilayers (ML) were deposited by magnetron sputtering (MS) and annealed by rapid thermal annealing. Trilayers of TiO2 cap/GeSi/TiO2 (TL) were also deposited using reactive high power impulse MS (HiPIMS) for TiO2 layers and dc MS for the GeSi layer. For TL samples a two-step annealing was employed, one before and the second after depositing TiO2 cap. Structure and morphology characterization (X-ray diffraction, scanning and transmission electron microscopy) was carried out and photocurrent measurements (voltage dependences, spectral curves) were performed. The annealed ML samples are formed of GeSi NCs with 5–10 nm sizes, while in the annealed TL samples, the GeSi NCs are larger (20–30 nm). These morphologies determine the multilayers photosensing properties in VIS-NIR of ML structures and in UV in TL ones, respectively.

Photosensitive GeSi/TiO 2 multilayers in VIS-NIR

The electrical and photosensing properties correlated with structure and morphology of TiO2/(GeSi/TiO2)2 multilayers are investigated. The multilayers are prepared by magnetron sputtering followed by rapid thermal annealing. Studies of Raman spectroscopy, transmission electron microscopy and X-ray diffraction are carried out. Measurements of dark current versus voltage and temperature are done. The photosensing properties are studied by measuring photocurrent spectra at different temperatures. We obtain multilayers with 10–15 nm Ge0.6Si0.4 nanocrystals (NCs) by annealing at 800 oC. We evidence the tunneling mechanism between neighbor NCs (T−1/2 law) in the dark current-temperature dependence. The photocurrent spectrum has a maximum with position shifting from 940 to 980 nm when the measurement temperature increases from 150 to 300 K, being due to the GeSi NCs.

Non-volatile memory structures with Ge NCs-HfO 2 intermediate layer

The structure and charge storage properties of a trilayer structure with Ge nanocrystals embedded in HfO2 oxide were studied. The trilayer structure HfO2/Ge-HfO2/HfO2/p-Si was prepared by magnetron sputtering and subsequent rapid thermal annealing at 600 °C. The TEM investigations reveal the formation of Ge NCs embedded in crystalline HfO2 at the position of the Ge-HfO2 layer. The capacitors were made by Al evaporation on both front and backside of the trilayer structure. The C-V characteristics show a counterclockwise hysteresis with large memory window of 0.85 V which is given only by the contribution of the Ge NCs embedded in HfO2. The I-V characteristics show an asymmetric behavior, the currents are three times higher for the negative voltage than the positive one.