V. Iancu

Stress-induced traps in multilayered structures

The trap parameters of defects in Si/CaF2 multilayered structures were determined from the analysis of optical charging spectroscopy measurements. Two kinds of maxima were observed. Some of them were rather broad, corresponding to “normal” traps, while the others, very sharp, were attributed to stress-induced traps. A procedure of optimal linear smoothing the noisy experimental data has been developed and applied. This procedure is based on finding the minimal value of the relative error with respect to the value of the smoothing window. In order to obtain a better accuracy for the description of the trapping-detrapping process, a Gaussian temperature dependence of the capture cross-sections characterizing the stress-induced traps was introduced. Both the normal and the stress-induced traps have been characterized, including some previously considered as only noise features.

Trapping levels in nanocrystalline porous silicon

Trapping levels in fresh (one month) and naturally aged (one year) nanocrystalline porous silicon have been investigated using the optical charging spectroscopy method. Four significant maxima and/or shoulders were observed for fresh samples and five for aged ones. They have been attributed to five and six trapping levels, respectively. The trapping centers corresponding to the most shallow four levels are situated at or nearby the internal surface of the porous silicon films.

The influence of shape and potential barrier on confinement energy levels in quantum dots

The influence of the shape of silicon quantum dots embedded in an amorphous silica matrix on the quantum confinement energy levels, as well as that of the Si/SiO2 potential barrier, are studied. The energy levels are computed using both the infinite and finite rectangular quantum well models for spherical quantum dots and the infinite rectangular quantum well for prolate spheroidal quantum dots. The results are compared with each other and also with the experimental activation energies obtained from the temperature dependence of the dark current. These activation energies are identified with the differences between the quantum confinement energies, subject to the selection rules. The finite rectangular quantum well model takes into account the experimental value of the finite potential barrier and the matrix-to-dot electron mass ratio. The energy levels are smaller than those for the infinite rectangular quantum well case; they decrease when the potential barrier decreases and the mass ratio increases. Di...

Modeling of optical charging spectroscopy investigation of trapping phenomena in nanocrystalline porous silicon

A model for trapping phenomena in nanocrystalline silicon investigated by the optical charging spectroscopy method is proposed. The model takes into account all the possible contributions to the discharge current. The results previously obtained on fresh and passivated porous silicon samples are interpreted within the framework of the model, which provides a good fit to the experimental data. The role played by the different kinds of trapping centers (donors and acceptors, surface and bulk) and the different trap parameters is analyzed.

Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride

The electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride is studied by measuring the voltage and temperature dependences of the current. The microstructure of the network is investigated by cross-sectional transmission electron microscopy. The multi-walled carbon nanotube network has an uniform spatial extension in the silicon nitride matrix. The current-voltage and resistance-temperature characteristics are both linear, proving the metallic behavior of the network. The I-V curves present oscillations that are further analyzed by computing the conductance-voltage characteristics. The conductance presents minima and maxima that appear at the same voltage for both bias polarities, at both 20 and 298 K, and that are not periodic. These oscillations are interpreted as due to percolation processes. The voltage percolation thresholds are identified with the conductance minima.

Coupled confinement effect on the photoluminescence and electrical transport in porous silicon

Abstract In this paper we report correlations between the structure, the photoluminescence and the transport properties of luminescent porous silicon. These correlations combined with the observed temperature dependence of tunneling characteristics yield quite a wholesome (pea-pod-like) model for this system.

Quantum Confinement in Nanometric Structures

This paper discusses the quantum confinement effects in nanometric structures that form low dimensional systems. In such systems, each surface/ interface acts like a potential barrier, i.e. the wall of a quantum well, generating new energy levels. These levels are computed in a model that uses the approximation of the infinite rectangular quantum wells. The model is adapted for 2D, 1D and 0D systems, respectively. Different applications are discussed. The differences between the model results and the experimental data are proved to be of the same order of magnitude as the differences between the levels computed within the frame of infinite and finite quantum well approximations.

Quantum confinement effect on the electrical transport and photoluminescence processes in nanocrystalline porous silicon

Photoluminescent porous silicon films were prepared and their microstructure investigations showed a double scale porosity, the walls of the micropores being formed by a nanowires network. The temperature dependence of both the electrical transport and photoluminescence processes in these films, as well as the spectral distribution of the photoluminescence, were measured. The results prove a clear correlation between the two processes. A simple quantum confiiement model was proposed for the calculation of the electronic energy in nanocrystalline silicon. The model explains the observed experimental behavior of both the electrical transport and the photoluminescence and justifies their correlation. Its quantitative predictions are in excellent agreement with the microstructure investigations. The model can be applied to a wide class of materials.

Temperature dependence of capture coefficients in trapping phenomena

The temperature dependence of the capture coefficients in trapping phenomena is investigated. It is proved that, besides the dependence induced by the thermal velocity of the carriers, the stress-induced traps at the interfaces of the multi-layered structures present a supplementary temperature dependence. This dependence is found to be of Gaussian type and is in a good agreement with the experimental results.

Influence of preparation method on structural properties of GeSiO nanosystems

GeSiO nanosystems were obtained using two different preparation methods, sol-gel and magnetron-sputtering. Transmission electron microscopy measurements were performed to investigate the films structure. Amorphous and crystalline Ge dots embedded in amorphous silicon dioxide were observed. The Ge concentration in the GeSiO films was by Energy-dispersive X-ray spectroscopy.