Valeriy A. Slipko
University of South Carolina
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Featured researches published by Valeriy A. Slipko.
Physical Review E | 2013
Yuriy V. Pershin; Valeriy A. Slipko; Di Ventra M
Memristive systems, namely, resistive systems with memory, are currently attracting considerable attention. Here we show that even the simplest one-dimensional network formed by the most common memristive elements with voltage threshold bears nontrivial physical properties. In particular, by taking into account the single element variability we find (1) dynamical acceleration and slowing down of the total resistance in adiabatic processes, (2) dependence of the final state on the history of the input signal with same initial conditions, (3) existence of switching avalanches in memristive ladders, and (4) independence of the dynamics voltage threshold with respect to the number of memristive elements in the network (scale invariance). An important criterion for this scale invariance is the presence of memristive systems with very small threshold voltages in the ensemble. These results elucidate the role of memory in complex networks and are relevant to technological applications of these systems.
Physical Review E | 2013
Valeriy A. Slipko; Yuriy V. Pershin; Di Ventra M
Can we change the average state of a resistor by simply applying white noise? We show that the answer to this question is positive if the resistor has memory of its past dynamics (a memristive system). We also prove that, if the memory arises only from the charge flowing through the resistor-an ideal memristor-then the current flowing through such memristor cannot charge a capacitor connected in series and, therefore, cannot produce useful work. However, the memristive system may skew the charge probability density on the capacitor, an effect that can be measured experimentally.
Physical Review Letters | 2013
Fuxiang Li; Yuriy V. Pershin; Valeriy A. Slipko; Nikolai A. Sinitsyn
Spin noise spectroscopy is an experimental approach to obtain correlators of mesoscopic spin fluctuations in time by purely optical means. We explore the information that this technique can provide when it is applied to a weakly nonequilibrium regime when an electric current is driven through a sample by an electric field. We find that the noise power spectrum of conducting electrons experiences a shift, which is proportional to the strength of the spin-orbit coupling for electrons moving along the electric field direction. We propose applications of this effect to measurements of spin-orbit coupling anisotropy and separation of spin noise of conducting and localized electrons.
Applied Physics Letters | 2013
Yuriy V. Pershin; Valeriy A. Slipko; Dibyendu Roy; Nikolai A. Sinitsyn
We propose a method of two-beam spin noise spectroscopy to test the spin transport at equilibrium via analysis of correlations between time-shifted spin fluctuations at different space locations. This method allows one to determine the strength of spin-orbit interaction and spin relaxation time and separate spin noise of conducting electrons from the background noise of localized electrons. We formulate a theory of two-beam spin noise spectroscopy in semiconductor wires with Bychkov-Rashba spin-orbit interaction taking into account several possible spin relaxation channels and finite size of laser beams. Our theory predicts a peak shift with respect to the Larmor frequency to higher or lower frequencies depending on the strength of spin orbit interaction and distance between the beams. The two-beam spin noise spectroscopy could find applications in experimental studies of semiconductors, emergent materials, and many other systems.
Physical Review B | 2010
Yuriy V. Pershin; Valeriy A. Slipko
We suggest a long-lived spin polarization structure, a radial spin helix, and study its relaxation dynamics. For this purpose, starting with a simple and physically clear consideration of spin transport, we derive a system of equations for spin polarization density and find its general solution in the axially symmetric case. It is demonstrated that the radial spin helix of a certain period relaxes slower than homogeneous spin polarization and plain spin helix. Importantly, the spin polarization at the center of the radial spin helix stays almost unchanged at short times. At longer times, when the initial non-exponential relaxation region ends, the relaxation of the radial spin helix occurs with the same time constant as that describing the relaxation of the plain spin helix.
Physical Review B | 2017
R. D. Yamaletdinov; Valeriy A. Slipko; Yuriy V. Pershin
Kinks and antikinks of the classical phi^4 field model are topological solutions connecting its two distinct ground states. Here we establish an analogy between the excitations of a long graphene nanoribbon buckled in the transverse direction and phi^4 model results. Using molecular dynamics simulations, we investigated the dynamics of a buckled graphene nanoribbon with a single kink and with a kink-antikink pair. Several features of phi^4 model have been observed including the kink-antikink capture at low energies, kink-antikink reflection at high energies, and a bounce resonance. Our results pave the way towards the experimental observation of a rich variety of phi^4 model predictions based on graphene.
Applied Physics Letters | 2015
Yuriy V. Pershin; Valeriy A. Slipko; M. Di Ventra
We study transmission lines made of memory capacitive (memcapacitive) materials. The transmission properties of these lines can be adjusted on demand using an appropriate sequence of pulses. In particular, we demonstrate a pulse combination that creates a periodic modulation of dielectric properties along the line. Such a structure resembles a distributed Bragg reflector having important optical applications. We present simulation results demonstrating all major steps of such a reconfigurable device operation including reset, programming and transmission of small amplitude signals. The proposed reconfigurable transmission lines employ only passive memory materials and can be realized using available memcapacitive devices.
Bulletin of the American Physical Society | 2013
Valeriy A. Slipko; Nikolai A. Sinitsyn; Yuriy V. Pershin
Here we suggest a novel hybrid spin noise spectroscopy technique, which is sensitive to the spin Hall effect. It is shown that, while the standard spin-spin correlation function is not sensitive to the spin Hall effect, spin-transverse voltage and transverse voltage-voltage correlation functions provide the missing sensitivity being linear and quadratic in the spin Hall coefficient, respectively. The correlation between transverse voltage and spin fluctuations appears as a result of spin-charge coupling fundamental for the spin Hall effect. We anticipate that the proposed method could find applications in the studies of spin-charge coupling in semiconductors.
Physical Review B | 2011
Valeriy A. Slipko; Ibrahim Savran; Yuriy Pershin Dr
We demonstrate that a homogeneous spin polarization in one-dimensional structures of finite length in the presence of Bychkov-Rashba spin-orbit coupling decays spontaneously toward a persistent spin helix. The analysis of formation of spin helical state is presented within a novel approach based on a mapping of spin drift-diffusion equations into a heat equation for a complex field. Such a strikingly different and simple method allows generating robust spin structures whose properties can be tuned by the strength of the spin orbit interaction and/or structures length. We generalize our results for two-dimensional case predicting formation of persistent spin helix in two-dimensional channels from homogeneous spin polarization.
Physical Review E | 2017
Valeriy A. Slipko; Yuriy V. Pershin
Traditional studies of memristive devices have mainly focused on their applications in nonvolatile information storage and information processing. Here, we demonstrate that the third fundamental component of information technologies-the transfer of information-can also be employed with memristive devices. For this purpose, we introduce a metastable memristive circuit. Combining metastable memristive circuits into a line, one obtains an architecture capable of transferring a signal edge from one space location to another. We emphasize that the suggested metastable memristive lines employ only resistive circuit components. Moreover, their networks (for example, Y-connected lines) have an information processing capability.