Vikas Anant

Constriction-limited detection efficiency of superconducting nanowire single-photon detectors

We investigate the source of the large variations in the observed detection efficiencies of superconducting nanowire single-photon detectors between many nominally identical devices. Through both electrical and optical measurements, we infer that these variations arise from “constrictions:” highly localized regions of the nanowires where the effective cross-sectional area for superconducting current is reduced. These constrictions limit the bias-current density to well below its critical value over the remainder of the wire, and thus prevent the detection efficiency from reaching the high values that occur in these devices when they are biased near the critical current density.

Optical properties of superconducting nanowire single-photon detectors

We measured the optical absorptance of superconducting nanowire single photon detectors. We found that 200-nm-pitch, 50%-fill-factor devices had an average absorptance of 21% for normally-incident front-illumination of 1.55-microm-wavelength light polarized parallel to the nanowires, and only 10% for perpendicularly-polarized light. We also measured devices with lower fill-factors and narrower wires that were five times more sensitive to parallel-polarized photons than perpendicular-polarized photons. We developed a numerical model that predicts the absorptance of our structures. We also used our measurements, coupled with measurements of device detection efficiencies, to determine the probability of photon detection after an absorption event. We found that, remarkably, absorbed parallel-polarized photons were more likely to result in detection events than perpendicular-polarized photons, and we present a hypothesis that qualitatively explains this result. Finally, we also determined the enhancement of device detection efficiency and absorptance due to the inclusion of an integrated optical cavity over a range of wavelengths (700-1700 nm) on a number of devices, and found good agreement with our numerical model.

Modeling the Electrical and Thermal Response of Superconducting Nanowire Single-Photon Detectors

We modeled the response of superconducting nanowire single-photon detectors during a photodetection event, taking into consideration only the thermal and electrical properties of a superconducting NbN nanowire on a sapphire substrate. Our calculations suggest that heating which occurs after the formation of a photo-induced resistive barrier is responsible for the generation of a measurable voltage pulse. We compared this numerical result with experimental data of a voltage pulse from a slow device, i.e. large kinetic inductance, and obtained a good fit. Using this electro-thermal model, we estimated the temperature rise and the resistance buildup in the nanowire, and the return current at which the nanowire becomes superconducting again. We also show that the reset time of these photodetectors can be decreased by the addition of a series resistance and provide supporting experimental data. Finally we present preliminary results on a detector latching behavior that can also be explained using the electro-thermal model.

Multi-Element Superconducting Nanowire Single-Photon Detector

A multi-element superconducting nanowire single photon detector (MESNSPD) is presented that consists of multiple independently-biased superconducting nanowire single photon detector (SNSPD) elements that form a continuous active area. A two-element SNSPD has been fabricated and tested, showing no measurable crosstalk between the elements, sub-50-ps relative timing jitter, and four times the maximum counting rate of a single SNSPD with the same active area. The MESNSPD can have a larger active area and higher speed than a single-element SNSPD and the input optics can be designed so that the detector provides spatial, spectral or photon number resolution.

Single Photon Counting from Individual Nanocrystals in the Infrared

Experimental restrictions imposed on the collection and detection of shortwave-infrared photons (SWIR) have impeded single molecule work on a large class of materials whose optical activity lies in the SWIR. Here we report the successful observation of room-temperature single nanocrystal photoluminescence at SWIR wavelengths using a highly efficient multielement superconducting nanowire single photon detector. We confirm that the photoluminescence from single lead sulfide nanocrystals is strongly antibunched, demonstrating the feasibility of performing sophisticated photon correlation experiments on individual weak SWIR emitters, and, more broadly, paving the way for sensitive measurements of spectral observables on infrared quantum systems that are incompatible with current detection techniques.

Enhancing etch resistance of hydrogen silsesquioxane via postdevelop electron curing

In this work, the authors enhanced the etch resistance of the negative-tone electron resist, hydrogen silsesquioxane (HSQ) to CF4 reactive ion etching (RIE) by curing HSQ after development. They fabricated superconducting nanowires that were 15nm wide by pattern transfer into a 6-nm-thick layer of NbN using cured HSQ as the etch mask. HSQ was cured using a postdevelop electron-beam exposure step prior to RIE in CF4 chemistry. This curing step was shown not to impact the resolution of the HSQ structures while increasing their etch resistance. The results of the authors demonstrate that the etch resistance of HSQ can be tuned after development, which is a desirable resist property of HSQ in addition to its high resolution and low line-edge roughness.

Suppressed Critical Current in Superconducting Nanowire Single-Photon Detectors With High Fill-Factors

In this work we present a new fabrication process that enabled the fabrication of superconducting nanowire single photon detectors SNSPD with fill-factors as high as 88% with gaps between nanowires as small as 12 nm. This fabrication process combined high-resolution electron-beam lithography with photolithography. Although this work was motivated by the potential of increased detection efficiency with higher fill-factor devices, test results showed an unexpected systematic suppression in device critical currents with increasing fill-factor.

Demonstration of gigabit-per-second and higher data rates at extremely high efficiency using superconducting nanowire single photon detectors

Superconducting nanowire single photon detectors have recently been demonstrated as viable candidates for photon-counting optical receivers operating at data rates in excess of 100 Mbit/s. In this paper, we discuss techniques for extending these data rates to rates > 1 Gbit/s. We report on a recent demonstration of a 2-element nanowire detector array operating at a source data rate of 1.25 Gbit/s. We also describe techniques for emulating larger arrays of detectors using a single detector. We use these techniques to demonstrate photon-counting receiver operation at data rates from 780-Mbit/s to 2.5 Gbit/s with sensitivities ranging from 1.1 to 7.1 incident photons per bit.

1.25-Gbit/s photon-counting optical communications using a two-element superconducting nanowire single photon detector

The sensitivity of a high-rate photon-counting optical communications link depends on the performance of the photon counter used to detect the optical signal. In this paper, we focus on ways to reduce the effect of blocking, which is loss due to time periods in which the photon counter is inactive following a preceding detection event. This blocking loss can be reduced by using an array of photon counting detectors or by using photon counters with a shorter inactive period. Both of these techniques for reducing the blocking loss can be employed by using a multi-element superconducting nanowire single-photon detector. Two-element superconducting nanowire single-photon detectors are used to demonstrate error-free photon counting optical communication at data rates of 781 Mbit/s and 1.25 Gbit/s.

Increased detection efficiencies of nanowire single-photon detectors by integration of an optical cavity and anti-reflection coating

We fabricate and test superconducting NbN-nanowire single-photon detectors with an integrated optical cavity and anti-reflection coating. We design the cavity and coating such as to maximize absorption in the NbN film of the detector.