Vikram Tripathi

Superconducting properties and Hall effect of epitaxial NbN thin films

We have measured the magnetotransport properties and Hall effect of a series of epitaxial NbN films grown on (100) oriented single crystalline MgO substrate under different conditions using reactive magnetron sputtering. Hall effect measurements reveal that the carrier density in NbN thin films is sensitive to the growth condition. The carrier density increases by a factor of 3 between the film with highest normal state resistivity

Phase Fluctuations in a Strongly Disordered s -Wave NbN Superconductor Close to the Metal-Insulator Transition

({\ensuremath{\rho}}_{n}\ensuremath{\sim}3.83\text{ }\ensuremath{\mu}\ensuremath{\Omega}\text{ }\text{m})

Measurement of magnetic penetration depth and superconducting energy gap in very thin epitaxial NbN films

and lowest transition temperature

Tunable superlattice in graphene to control the number of Dirac points.

({T}_{c}\ensuremath{\sim}9.99\text{ }\text{K})

Tunneling studies in a homogeneously disordered s-wave superconductor: NbN

and the film with lowest normal state resistivity

Charge inhomogeneities and transport in semiconductor heterostructures with a Mn δ -layer

({\ensuremath{\rho}}_{n}\ensuremath{\sim}0.94\text{ }\ensuremath{\mu}\ensuremath{\Omega}\text{ }\text{m})

Phase Diagram and Upper Critical Field of Homogeneously Disordered Epitaxial 3-Dimensional NbN Films

and highest transition temperature

Temperature dependence of resistivity and Hall coefficient in strongly disordered NbN thin films

({T}_{c}\ensuremath{\sim}16.11\text{ }\text{K})

Parity-time symmetry-breaking mechanism of dynamic Mott transitions in dissipative systems

, while the mobility of carriers does not change significantly. Our results show that

Evolution of superconducting properties with disorder in epitaxial NbN films

{T}_{c}