John Jesudasan

Superconducting properties and Hall effect of epitaxial NbN thin films

We have measured the magnetotransport properties and Hall effect of a series of epitaxial NbN films grown on (100) oriented single crystalline MgO substrate under different conditions using reactive magnetron sputtering. Hall effect measurements reveal that the carrier density in NbN thin films is sensitive to the growth condition. The carrier density increases by a factor of 3 between the film with highest normal state resistivity

Phase Fluctuations in a Strongly Disordered s -Wave NbN Superconductor Close to the Metal-Insulator Transition

({\ensuremath{\rho}}_{n}\ensuremath{\sim}3.83\text{ }\ensuremath{\mu}\ensuremath{\Omega}\text{ }\text{m})

The Higgs mode in disordered superconductors close to a quantum phase transition

and lowest transition temperature

Measurement of magnetic penetration depth and superconducting energy gap in very thin epitaxial NbN films

({T}_{c}\ensuremath{\sim}9.99\text{ }\text{K})

Substrate effect on electrical transport properties of RNiO3 thin films prepared by pulsed laser deposition

and the film with lowest normal state resistivity

Vortex matching effect in engineered thin films of NbN

({\ensuremath{\rho}}_{n}\ensuremath{\sim}0.94\text{ }\ensuremath{\mu}\ensuremath{\Omega}\text{ }\text{m})

Tunneling studies in a homogeneously disordered s-wave superconductor: NbN

and highest transition temperature

Enhancement of the finite-frequency superfluid response in the pseudogap regime of strongly disordered superconducting films.

({T}_{c}\ensuremath{\sim}16.11\text{ }\text{K})

Correlated conductance fluctuations close to the Berezinskii-Kosterlitz-Thouless transition in ultrathin NbN films.

, while the mobility of carriers does not change significantly. Our results show that

Phase Diagram and Upper Critical Field of Homogeneously Disordered Epitaxial 3-Dimensional NbN Films

{T}_{c}