Vilas S. Patil

Investigation of Current Conduction Mechanism in HfO2 Thin Film on Silicon Substrate

In this work, we have investigated current conduction mechanisms in HfO2 thin film deposited on silicon substrate by RF sputtering technique. The thin films of HfO2 were deposited on p-type silicon substrates. FTIR measurement shows the presence of hafnium in the film. Among the various conduction mechanisms the 13.7 nm thin HfO2 film on Si follows the Fowler–Nordheim (FN) tunneling. The Poole–Frenkel (PF) emission, Schottky emission (SE) and Direct Tunneling (DT) also studied. The barrier height (ϕB) of 0.74 eV is calculated from experimental work through Fowler–Nordheim tunneling mechanism.

Capacitance-Voltage Measurement of SiO2/GeOxNy Gate Stack on Surface Passivated Germanium

Germanium (Ge) based MOS transistors is possible alternative to silicon based MOS transistors due to high mobility of carriers in Ge. Extensive research is going on for fabrication of high mobility MOS devices worldwide. Here, we have studied the c-v characteristics of Ge based surface passivated MOS structure such as dielectric constant of gate stack, effective oxide charges, density of interface charges at semiconductor oxide interface etc. The interface trap density extracted from the C-V/G-V measurement showed the lowest interface trap density of 7.82 × 1011 cm2 eV−1. The minimum leakage current density for SiO2/GexONy gate dielectric stack is 1.35 × 10−7 A cm−2 at gate bias of 1 V.

PEALD grown high-k ZrO2 thin films on SiC group IV compound semiconductor

The study of ZrO2 thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO2 thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO2 thin films were post deposition annealed in rapid thermal annealing chamber at temperature of 400°С. The atomic force microscopy and X-гау photoelectron spectroscopy has been carried out to study the surface topography, roughness and chemical composition of thin film, respectively.