Vipin Chawla

Modeling and optimization of atomic layer deposition processes on vertically aligned carbon nanotubes

Summary Many energy conversion and storage devices exploit structured ceramics with large interfacial surface areas. Vertically aligned carbon nanotube (VACNT) arrays have emerged as possible scaffolds to support large surface area ceramic layers. However, obtaining conformal and uniform coatings of ceramics on structures with high aspect ratio morphologies is non-trivial, even with atomic layer deposition (ALD). Here we implement a diffusion model to investigate the effect of the ALD parameters on coating kinetics and use it to develop a guideline for achieving conformal and uniform thickness coatings throughout the depth of ultra-high aspect ratio structures. We validate the model predictions with experimental data from ALD coatings of VACNT arrays. However, the approach can be applied to predict film conformality as a function of depth for any porous topology, including nanopores and nanowire arrays.

Use of radiofrequency power to enable glow discharge optical emission spectroscopy ultrafast elemental mapping of combinatorial libraries with nonconductive components: nitrogen-based materials

Combinatorial chemistry and high-throughput techniques are an efficient way of exploring optimal values of elemental composition. Optimal composition can result in high performance in a sequence of material synthesis and characterization. Materials combinatorial libraries are typically encountered in the form of a thin film composition gradient which is produced by simultaneous material deposition on a substrate from two or more sources that are spatially separated and chemically different. Fast spatially resolved techniques are needed to characterize structure, composition, and relevant properties of these combinatorial screening samples. In this work, the capability of a glow discharge optical emission spectroscopy (GD-OES) elemental mapping system is extended to nitrogen-based combinatorial libraries with nonconductive components through the use of pulsed radiofrequency power. The effects of operating parameters of the glow discharge and detection system on the achievable spatial resolution were investigated as it is the first time that an rf source is coupled to a setup featuring a push-broom hyperspectral imaging system and a restrictive anode tube GD source. Spatial-resolution optimized conditions were then used to characterize an aluminum nitride/chromium nitride thin-film composition spread. Qualitative elemental maps could be obtained within 16.8xa0s, orders of magnitude faster than typical techniques. The use of certified reference materials allowed quantitative elemental analysis maps to be extracted from the emission intensity images. Moreover, the quantitative procedure allowed correcting for the inherent emission intensity inhomogeneity in GD-OES. The results are compared to quantitative depth profiles obtained with a commercial GD-OES instrument.

Electron energy loss spectroscopy analysis of the interaction of Cr and V with MWCNTs

The presented scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS) results show the strong reaction of Cr and V with the graphitic walls of MWCNTs. For Vanadium, an interfacial VC layer could be observed at the interface between VN and MWCNTs, when the samples were heated in situ to 750°C. Knowledge about this interfacial VC layer is important for the formation of VN-MWCNT hybrid materials, used in supercapacitor electrodes, often synthesized at high temperatures. Chromium reacts at 500°C with the MWCNTs to form Cr3C2 and in some cases, dissolved the MWCNT completely. Together with the previously published results about the interaction of MWCNTs with Cu (no interaction) and Ni (a slight rehybridisation trend for the outermost MWCNT-wall observed with EELS) (Ilari et al., 2015) the influence of the valence d-orbital occupancy of 3d transition metals on the interaction strength with CNTs is shown experimentally. For a transition metal to form chemical bonds towards CNT-walls, unoccupied states in its valence d-orbitals are needed. While Ni (2 unoccupied states) interacts only slightly, Cr (5 unoccupied states) and V (7 unoccupied states) react much stronger and can dissolve the MWCNTs, at least partially.