Vitalii Stetsovych

Epitaxial Cubic Ce2O3 Films via Ce-CeO2 Interfacial Reaction.

Thin films of reduced ceria supported on metals are often applied as substrates in model studies of the chemical reactivity of ceria based catalysts. Of special interest are the properties of oxygen vacancies in ceria. However, thin films of ceria prepared by established methods become increasingly disordered as the concentration of vacancies increases. Here, we propose an alternative method for preparing ordered reduced ceria films based on the physical vapor deposition and interfacial reaction of Ce with CeO2 films. The method yields bulk-truncated layers of cubic c-Ce2O3. Compared to CeO2 these layers contain 25% of perfectly ordered vacancies in the surface and subsurface allowing well-defined measurements of the properties of ceria in the limit of extreme reduction. Experimentally, c-Ce2O3(111) layers are easily identified by a characteristic 4 × 4 surface reconstruction with respect to CeO2(111). In addition, c-Ce2O3 layers represent an experimental realization of a normally unstable polymorph of Ce2O3. During interfacial reaction, c-Ce2O3 nucleates on the interface between CeO2 buffer and Ce overlayer and is further stabilized most likely by the tetragonal distortion of the ceria layers on Cu. The characteristic kinetics of the metal-oxide interfacial reactions may represent a vehicle for making other metastable oxide structures experimentally available.

Growth of transition metals on cerium tungstate model catalyst layers

Two model catalytic metal/oxide systems were investigated by photoelectron spectroscopy and scanning tunneling microscopy. The mixed-oxide support was a cerium tungstate epitaxial thin layer grown in situ on the W(1 1 0) single crystal. Active particles consisted of palladium and platinum 3D islands deposited on the tungstate surface at 300 K. Both metals were found to interact weakly with the oxide support and the original chemical state of both support and metals was mostly preserved. Electronic and morphological changes are discussed during the metal growth and after post-annealing at temperatures up to 700 K. Partial transition-metal coalescence and self-cleaning from the CO and carbon impurities were observed.