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Dive into the research topics where Vladimir V. Talanov is active.

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Featured researches published by Vladimir V. Talanov.


Superconductor Science and Technology | 2015

Reproducible operating margins on a 72 800-device digital superconducting chip

Quentin P. Herr; Joshua Osborne; M.J.A. Stoutimore; Harold Hearne; Ryan Selig; Jacob Vogel; Eileen Min; Vladimir V. Talanov; Anna Yurievna Herr

We report the design and test of Reciprocal Quantum Logic shift-register yield vehicles consisting of up to 72,800 Josephson junction devices per die, the largest digital superconducting circuits ever reported. Multiple physical layout styles were matched to the MIT Lincoln Laboratory foundry, which supports processes with both four and eight metal layers and minimum feature size of 0.5 {\mu}m. The largest individual circuits with 40,400 junctions indicate large operating margins of


international symposium on the physical and failure analysis of integrated circuits | 2013

High resolution Magnetic Current Imaging for die level short localization

Jan Gaudestad; Nicolas Gagliolo; Vladimir V. Talanov; R. H. Yeh; C. J. Ma

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Superconductor Science and Technology | 2014

A scanning SQUID microscope with 200 MHz bandwidth

Vladimir V. Talanov; Nesco M. Lettsome; Valery Borzenets; Nicolas Gagliolo; Alfred B. Cawthorne; Antonio Orozco

20% on AC clock amplitude. In one case the data were reproducible to the accuracy of the measurement,


international symposium on the physical and failure analysis of integrated circuits | 2015

High Resistance Open localization

Yen-Hao Jack Chen; Po Chih Huang; Vladimir V. Talanov; Antonio Orozco; Jan Gaudestad

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international reliability physics symposium | 2013

Open localization on copper wirebond using Space Domain Reflectometry

Jan Gaudestad; Vladimir V. Talanov; Antonio Orozco; Khai Ling Khoo

1% across five thermal cycles using only the rudimentary precautions of passive mu-metal magnetic shielding and a controlled cool-down rate of 3 mK/s in the test fixture. We conclude that with proper mitigation techniques, flux-trapping is no longer a limiting consideration for very-large-scale-integration of superconductor digital logic.


THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012 | 2013

Microwave near-field imaging of electrical and magnetic properties of graphene and graphite

Vladimir V. Talanov; Christopher Del Barga; Lee Wickey; Mekan Ovezmyradov; Eric A. Shaner; Aaron Gin; Nikolai G. Kalugin

Magnetic Field Imaging (MFI) technology is capable of localize shorts using Magnetic Current Imaging (MCI) technique with a very high spatial resolution [1]. In this paper we demonstrate that a Giant Magneto Resistance (GMR) sensor positioned in close proximity to the front side of a die sample enables MFI to achieve sub micron resolution.


Bulletin of the American Physical Society | 2012

DC SQUID RF magnetometer with 200 MHz bandwidth

Vladimir V. Talanov; Nesco M. Lettsome; Antonio Orozco; Alfred B. Cawthorne; Valery Borzenets

We developed a scanning SQUID microscope utilizing DC SQUID with novel readout electronics capable of sensing coherent magnetic fields from 50 to 200 MHz. To overcome the bandwidth limitation of traditional closed-loop SQUID magnetometers, we employ a flux-modulated closed loop to simultaneously lock the quasi-static magnetic flux and flux-bias the SQUID for amplification of RF flux. Demodulating the SQUID voltage with a double lock-in technique yields the signal proportional to the amplitude and phase of RF magnetic field. We describe the system performance and present images of a variety of samples.


Archive | 2011

DC SQUID BASED RF MAGNETOMETER OPERATING AT A BANDWIDTH OF 200 MHZ AND HIGHER

Antonio Orozco; Vladimir V. Talanov; Alfred B. Cawthorne; Nesco M. Lettsome

Magnetic Field Imaging (MFI) is a widely used technique in the Semiconductor industry for non-destructive Electrical Fault Isolation (EFI) for shorts, leakages and opens. When the devices shrink and the mobile electronics industry has a more strict criteria for speed with low power consumption, making High Resistance Opens (HRO) failures more important to detect. We show in this paper two cases in which magnetic field phase analysis using MFI helped localize HRO failures that were causing delays and slower speed in addition to higher power consumption.


Archive | 2011

Method and system for localization of open defects in electronic devices with a dc squid based rf magnetometer

Antonio Orozco; Vladimir V. Talanov; Alfred B. Cawthorne; Nicholas Eric Gagliolo

Space Domain Reflectometry (SDR) is a new technique that has already shown to be a reliable non-destructive method to image open failures in semiconductor chips by pumping a high frequency signal into the open trace. We show in this paper that SDR can be used to accurately find a breakage location in copper wire bond that failed during stress test.


Archive | 2015

Reproducible Operating Margins on a 72800-Device Digital Superconducting Chip

Quentin P. Herr; Joshua Osborne; M.J.A. Stoutimore; Harold Heame; Ryan Selig; Jacob Vogel; Eileen Min; Vladimir V. Talanov; Anna Y. Herr

We report on microwave response of graphene and graphite measured using electric field and magnetic field-detecting near-field scanning probe microwave microscopes.

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Dive into the Vladimir V. Talanov's collaboration.

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Lee Wickey

New Mexico Institute of Mining and Technology

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Nikolai G. Kalugin

New Mexico Institute of Mining and Technology

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Christopher Del Barga

New Mexico Institute of Mining and Technology

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Eric A. Shaner

Sandia National Laboratories

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Alfred B. Cawthorne

Trevecca Nazarene University

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Edward Gonzales

Sandia National Laboratories

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Irakli Kalichava

New Mexico Institute of Mining and Technology

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Aaron Gin

Sandia National Laboratories

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Aaron V. Gin

Sandia National Laboratories

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Mekan Ovezmyradov

New Mexico Institute of Mining and Technology

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