Volkan Şenay

Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique

Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet–visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.

Optical and surface properties of optically transparent Li3 PO4 solid electrolyte layer for transparent solid batteries.

In this study, optical and surface properties of the optically transparent Li3 PO4 solid electrolyte layer for transparent solid battery have been investigated for the first time. To determine the optical properties, transmittance, absorbance, reflection, refractive index spectra, and optical band gap were determined by UV-Vis spectrophotometer and optical interferometer. The surface property of the transparent Li3 PO4 solid electrolyte was analyzed using atomic force microscopy. One another important parameter is contact angle (CA) surface free energy (SFE). CA and SFE were determined by optical tensiometer. These values probably are a most important parameter for polymer and hybrid battery performance. For the best performance, value of CA should be low. As a result, solid electrolyte layer is a highly transparent and it has a high wettability. SCANNING 38:317-321, 2016.

A new method for titania thin film production: Thermionic vacuum arc method

In this research, transparent titania (TiO2) thin films were deposited on a glass microscope slide and on a flexible polyethylene terephthalate (PET) substrate under a high vacuum condition by means of the thermionic vacuum arc (TVA) method in a very short period of time (60 s). Optical properties and surface properties of the coated TiO2 surfaces are related to the structural changes of the coated layers due to ion energies and substrate effect. But obtained results are closely linked to literature values. Our analysis showed that the TVA method is an alternative method for low-temperature coatings and the produced films present important advantages for optical and industrial applications.

Optical and surface properties of the in doped GaAs layer deposition using thermionic vacuum arc method.

A broadband optical transparent InGaAs semiconductor layer production of micron thicknesses was produced in only 75 s by thermionic vacuum arc (TVA) method at the first time. The optical and surface properties of the produced layers have been investigated. InGaAs structure is using in electronics and optoelectronics devices. The main advantage of TVA method is its fast deposition rate, without any loss in the quality of the films. Doping is a very simple and fast according to common production methods. InGaAs is an alloy of indium arsenide (InAs) and gallium arsenide (GaAs). InAs with (220) crystallographic direction and GaAs with (024)/(022) crystallographic directions were detected using by XRD analysis. GaAs and InAs are in the cubic and zinc blende crystal system, respectively. According to the transmittance spectra, sample has a broadband transparency in the range of 1000-3300 nm. According to results, defined TVA method for In doping to GaAs is proper fast and friendly method. SCANNING 38:297-302, 2016.

Optical, surface and magnetic properties of the Ti-doped GaN nanosheets on glass and PET substrates by thermionic vacuum arc (TVA) method

ABSTRACT Room-temperature ferromagnetism of GaN and doped GaN materials has been reported in nanostructured form. Especially, nanoparticles show ferromagnetic properties at room temperature. In this paper, Ti-doped effects on GaN were deposited on glass and Polyethylene terephthalate (PET) substrates by thermionic vacuum arc and their room temperature magnetic properties are presented for the first time. The structure of the Ti-doped GaN was crystallized in a novel form, nano honeycomb formation. Optical and surface properties of the nano honeycombs and honeycomb nanosheets were determined. GaN and TiN phases were detected in X-ray diffraction patterns. Field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM) device were used for imaging of the crystal structure. According to FESEM images, hexagonal crystal formations were detected for all samples. Crystal formations are very good oriented on PET substrates materials according to glass samples. The band gap value of the sample is changed by crystallization dimension. It was found that increasing crystallizations and decreasing crystal dimensions were increased the band gap of the Ti-doped GaN approximately 50 meV. Fourier transform infrared spectra and a vibrating sample magnetometer results were presented. These results confirm the Ti doped GaN honeycomb nanosheets and nano honeycombs show the room temperature ferromagnetic properties.

Influence of oxygen partial pressure on the metastable copper oxide thin films

Paramelaconite (Cu4O3) is a metastable copper oxide. Metastable copper oxide thin films were deposited on glass substrates by reactive RF magnetron sputtering in argon (Ar) and oxygen (O2) gas mixture atmospheres. Ar/O2 gas ratios in the sputtering ambient were chosen as 1/1 and 1/9. The surface and optical properties were determined by X-ray diffractometer (XRD), atomic force microscope (AFM) and UV-Vis spectrophotometer. The XRD patterns of the samples exhibited single strong diffraction peaks at 35.39∘ and 35.49∘, corresponding to the (202) peak of Cu4O3. The mean thickness values were measured as 100 nm and 80 nm for the films deposited at 1/1 and 1/9 Ar/O2 gas ratios, respectively. The samples showed low transmittance and high absorbance in the high frequency region.

Investigation of the surface free energy of the ITO thin films deposited under different working pressure

This study discusses the influence of working pressure on the surface energy of the ITO thin films produced by radio frequency magnetron sputtering method. Optical tensiometer (Attension Theta Lite) is used for evaluating wetting behavior of the water droplet on the film surface and Equation of State method was selected to determine surface free energy for this study. Equation of state method does not divide the surface tension into different components such as polar, dispersive, acid-base. It is calculated the surfaces’ free energy measuring the contact angle with a single liquid. The surface free energy value was in the range of 15-31 mN/m. Also, the transmittances were determined in the wavelength range between 200 and 1000 nm using the UNICO 4802 UV-Vis double beam spectrophotometer. Transmittances of the produced ITO thin films are greater than %70 in the visible range.

Investigation of the thickness effect to impedance analysis results AlGaN acoustic sensor

In this study, AlGaN acoustic sensors were deposited on aluminum metal substrate by thermionic vacuum arc (TVA) method, for the first time. Impedance analyses of the fabricated acoustic sensors were investigated for the determining of effect of the nano layer thickness. Thickness values are very close to each others. Fabricated sensors have been fabricated from AlGaN deposited on aluminum substrates. Gallium materials are used in many applications for optoelectronic device and semiconductor technology. Thermionic vacuum arc is the deposition technology for the variously materials and applications field. TVA production parameters and some properties of the deposited layers were investigated. TVA is the fast deposition technology for the gallium compounds and doped gallium compounds. Obtained results that AlGaN layer are very promising material for an acoustic sensor but also TVA is proper fast technology for the production.

Impedance analysis of nano thickness layered AlGaN acoustic sensor deposited by thermionic vacuum arc

In this study, AlGaN acoustic sensor was deposited on aluminum metal substrate by thermionic vacuum arc (TVA) method for the first time. Gallium materials are used in many applications for optoelectronic device and semiconductor technology. Thermionic vacuum arc is the deposition technology for the variously materials and applications field. The thickness of the acoustic sensor is in deposited as nano layer. Impedance analyses were realized. Also, TVA production parameters and some properties of the deposited layers were investigated. TVA is a fast deposition technology for the gallium compounds and doped gallium compounds. Obtained results show that AlGaN materials are very promising materials. Moreover, these acoustic sensors have been produced by TVA technology.

Some physical properties of Co-doped GaAs thin films grown by thermionic vacuum arc

Cobalt doped GaAs thin films with the thickness of 100 nm and 200 nm were deposited on glass substrates by a thermionic vacuum arc system. The optical and surface properties were investigated as functions of the film thickness. The refractive index of the films decreased with the increasing thickness. A band gap value of 1.42 eV was obtained for the 100 nm film and 1.38 eV for the 200 nm film from the Tauc plots of (αhν)2 vs. hν. According to the results obtained from the AFM studies, the root mean square surface roughness of the films were nm and 3.13 nm for the 100 nm and 200 nm film, respectively.