Volker Schmidt
IBM
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Publication
Featured researches published by Volker Schmidt.
Journal of Electronic Materials | 2013
S. Karg; Philipp Mensch; Bernd Gotsmann; Heinz Schmid; P. Das Kanungo; H. Ghoneim; Volker Schmidt; Mikael Björk; Valentina Troncale; Heike Riel
We have measured the thermopower and the thermal conductivity of individual silicon and indium arsenide nanowires (NWs). In this study, we evaluate a self-heating method to determine the thermal conductivity λ. Experimental validation of this method was performed on highly n-doped Si NWs with diameters ranging from 20xa0nm to 80xa0nm. The Si NWs exhibited electrical resistivity of
Nanotechnology | 2014
S. Karg; Valentina Troncale; Ute Drechsler; Philipp Mensch; P. Das Kanungo; Heinz Schmid; Volker Schmidt; Lynne M. Gignac; Heike Riel; Bernd Gotsmann
Applied Physics Letters | 2015
Philipp Mensch; S. Karg; Volker Schmidt; Bernd Gotsmann; Heinz Schmid; Heike Riel
rho = (8pm4), hbox{m}Upomega,hbox{cm}
european solid state device research conference | 2013
Philipp Mensch; S. Karg; Bernd Gotsmann; Pratyush Das Kanungo; Volker Schmidt; Valentina Troncale; Heinz Schmid; Heike Riel
design, automation, and test in europe | 2014
Heinz Schmid; B. M. Borg; K. E. Moselund; P. Das Kanungo; Giorgio Signorello; S. Karg; Philipp Mensch; Volker Schmidt; Heike Riel
ρ=(8±4)mΩcm at room temperature and Seebeck coefficient of −(250xa0±xa0100)xa0μV/K. The thermal conductivity of Si NWs measured using the proposed method is very similar to previously reported values; e.g., for Si NWs with 50xa0nm diameter, λ = 23xa0W/(mxa0K) was obtained. Using the same method, we investigated InAs NWs with diameter of 100xa0nm and resistivities of
device research conference | 2013
Bernd Gotsmann; Fabian Menges; S. Karg; Valentina Troncale; Philipp Mensch; Heinz Schmid; Pratyush Das Kanungo; Ute Drechsler; Volker Schmidt; Meinrad Tschudy; Andreas Stemmer; Heike Riel
Small | 2006
Volker Schmidt; Heike Riel; Stephan Senz; S. Karg; Walter Riess; Ulrich Gösele
rho = (25pm5), hbox{m}Upomega,hbox{cm}
Archive | 2015
Bernd Gotsmann; Volker Schmidt
Archive | 2015
Bernd Gotsmann; S. Karg; Volker Schmidt
ρ=(25±5)mΩcm at room temperature. Thermal conductivity of λ = 1.8xa0W/(mxa0K) was obtained, which is about 20 to 30 times smaller than in bulk InAs. We analyzed the accuracy of the self-heating method by means of analytical and numerical solution of the one-dimensional (1-D) heat diffusion equation taking various loss channels into account. For our NWs suspended from the substrate with low-impedance contacts the relative error can be estimated to bexa0≤25%.
Bulletin of the American Physical Society | 2013
V. Troncale; Philipp Mensch; S. Karg; Heinz Schmid; Pratyush Das Kanungo; Emanuel Loertscher; Ute Drechsler; Volker Schmidt; Heike Riel; Bernd Gotsmann
Precise measurements of a complete set of thermoelectric parameters on a single indium-arsenide nanowire (NW) have been performed using highly sensitive, micro-fabricated sensing devices based on the heater/sensor principle. The devices were fabricated as micro electro-mechanical systems consisting of silicon nitride membranes structured with resistive gold heaters/sensors. Preparation, operation and characterization of the devices are described in detail. Thermal decoupling of the heater/sensor platforms has been optimized reaching thermal conductances as low as 20 nW K(-1) with a measurements sensitivity below 20 nW K(-1). The InAs NWs were characterized in terms of thermal conductance, four-probe electrical conductance and thermopower (Seebeck coefficient), all measured on a single NW. The temperature dependence of the parameters determining the thermoelectric figure-of-merit of an InAs NW was acquired in the range 200-350 K featuring a minor decrease of the thermal conductivity from 2.7 W (m K)(-1) to 2.3 W (m K)(-1).