W. Diehl

Dynamic behavior of 1040nm semiconductor disk lasers on a nanosecond time scale

The nanosecond dynamics of near-infrared semiconductor disk lasers is investigated experimentally and theoretically. Lasing and photoluminescence following barrier pumping are analyzed. Their spectral and temporal features such as luminescence overshoot and clamping, delay of lasing onset, and redshift of the emission are explained by a rate equation model taking into account the microscopic gain and luminescence.

Vertical-External-Cavity Surface-Emitting Laser With Monolithically Integrated Pump Lasers

The monolithic integration of pump lasers and optically pumped vertical-external-cavity surface-emitting lasers is demonstrated. An innovative contacting scheme for the pump lasers offers high design flexibility and scalability. First devices at 1000 nm generate output powers of 2.5 W in pulsed and 0.65 W in continuous-wave operation.

High power semiconductor disk lasers

Results on high-power optically pumped semiconductor disk lasers are reviewed. Multi-Watt emission with differential efficiencies larger than 40% and power-densities up to 15 kW/cm2 is demonstrated in the near-infrared wavelength range of 920-1050 nm

Monolithic integration of pump lasers and a vertical external cavity surface emitting laser (VECSEL)

Integration of optically-pumped VECSELs with pump lasers is demonstrated using an innovative contacting scheme. Devices for medium-power green conversion (lambda~1060 nm) are fabricated with threshold currents as low as 160 mA and cw output powers exceeding 100 mW.

Dynamic behavior of 1050nm semiconductor disk lasers on a nanosecond to microsecond time scale

We report on the lasing and photoluminescence dynamics of 1050nm semiconductor disk lasers using well and barrier pumping. Spectral and temporal features are explained using a rate equation model including microscopic gain and luminescence.

Low threshold (GaIn)(NAs) semiconductor disk laser emitting at 1260nm

We demonstrate a 1260 nm GalnNAs semiconductor disk laser grown by MOVPE showing threshold densities as low as l.lkW/cm2 and slope efficiencies of almost 13% at room temperature while pumping at 808 nm.

Nanosecond to microsecond dynamics of 1040nm semiconductor disk lasers

We report on the lasing dynamics of semiconductor disk lasers following well and barrier pumping with both 500ns and 5 ¿s pulses. The dynamics are explained using rate-equations.

Efficient quantum-well pumping of semiconductor disk lasers at 920 nm

We report on semiconductor disk lasers at 920 nm with optical pumping of the quantum wells at 308 nm. 5 W cw output power with good beam quality and an optical-to-optical conversion efficiency of 39% have been demonstrated.

High efficient OPS-disk lasers with quantum-well pumping

We report on novel semiconductor disk laser concepts with direct optical pumping of the quantum wells. 5 W cw output power from a semiconductor disk laser at 920 nm with 39% optical conversion efficiency has been demonstrated.

High Power Semiconductor Disk Lasers

We present high-power emission from semiconductor disk lasers. By intra-cavity frequency-doubling of multi-Watt infra-red emission, more than 0.5W of blue and green have been generated. 200 mW have been achieved directly for red emitters.