W. Faschinger

Binding energy of charged excitons in ZnSe-based quantum wells

Excitons and charged excitons (trions) are investigated in ZnSe-based quantum well structures with (Zn,Be,Mg)Se and (Zn,Mg)(S,Se) barriers by means of magneto-optical spectroscopy. Binding energies of negatively

Optical method for the determination of carrier density in modulation-doped quantum wells

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Excitons and Trions Modified by Interaction with a Two-Dimensional Electron Gas

and positively

ZnSe-based MBE-grown photodiodes

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Real-time in situ x-ray diffraction as a method to control epitaxial growth

charged excitons are measured as functions of quantum well width, and free carrier density and in external magnetic fields up to 47 T. The binding energy of

In situ lateral growth control of optically efficient quantum structures

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Wavelength control in II–VI laser diodes with first order distributed Bragg reflectors

shows a strong increase from 1.4 to 8.9 meV with decreasing quantum well width from 190 to

Fabrication of dry etched CdZnSe/ZnSe quantum wires by thermally assisted electron cyclotron resonance etching

29 \AA{}.

Combined Exciton-Electron Optical Processes in Optical Spectra of Modulation Doped QWs

The binding energies of

High‐Excitation Effects in the Optical Properties of δ‐Doped ZnSe Quantum Wells

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