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Featured researches published by W. Urbanek.


Proceedings of SPIE | 2014

High reliability of high power and high brightness diode lasers

Manoj Kanskar; Ling Bao; John Bai; Zhigang Chen; D. Dahlen; Mark DeVito; Weimin Dong; Mike Grimshaw; Jim Haden; X. Guan; M. Hemenway; Keith Kennedy; Robert J. Martinsen; J. Tibbals; W. Urbanek; Shiguo Zhang

We report on continued progress in the development of high power and high brightness single emitter laser diodes from 790 nm to 980 nm for reliable use in industrial and pumping applications. High performance has been demonstrated in nLIGHT’s diode laser technology in this spectral range with corresponding peak electrical-to-optical power conversion efficiency of ~65%. These pumps have been incorporated into nLIGHT’s fiber-coupled pump module, elementTM. We report the latest updates on performance and reliability of chips and fiber-coupled modules. This paper also includes a new chip design with significantly narrower slow-axis divergence which enables further improved reliable power and brightness. Preliminary reliability assessment data for these devices will be presented here as well.


Proceedings of SPIE | 2017

Advances in high-brightness fiber-coupled laser modules for pumping multi-kW CW fiber lasers

M. Hemenway; W. Urbanek; D. Dawson; Zhigang Chen; Ling Bao; Manoj Kanskar; Mark DeVito; Dahv A. V. Kliner; Robert J. Martinsen

High-power continuous wave (CW) fiber lasers with excellent beam quality continue to drive demand for higher brightness pump modules at 920 nm and 976 nm. Over the last decade, the brightness requirement for pumping state-of-the-art CW fiber lasers (CWFLs) has risen from approximately 0.5 W/(mm-mR)2 to ~2 W/(mm-mR)2 for today’s mutlikW CWFLs. The most advanced CWFLs demand even higher brightness pump modules in order to minimize design complexity, maximize efficiency, and maximize the stimulated Raman scattering threshold. This need has resulted in a reoptimization of the nLIGHT elementTM line to enable a commercial 200 W, 18-emitter package with a 0.15 NA beam in a 105 μm fiber, corresponding to a brightness of 3.2 W/(mm-mR)2 and a 25 % increase in power over the existing elementTM e14 at 155 W. Furthermore, we have demonstrated the further scalability of this reoptimized design with our next generation COS, resulting in a maximum of 272 W into 105 μm fiber with a brightness of 3.8 W/(mm-mR)2.


Proceedings of SPIE | 2014

High-brightness, fiber-coupled pump modules in fiber laser applications

David Martin Hemenway; W. Urbanek; Kylan Hoener; Keith Kennedy; Ling Bao; D. Dawson; Emily S. Cragerud; David Balsley; Gary Burkholder; Mitch Reynolds; Kirk Price; Jim Haden; Manoj Kanskar; Dahv A. V. Kliner

High-power, high-brightness, fiber-coupled pump modules enable high-performance industrial fiber lasers with simple system architectures, multi-kW output powers, excellent beam quality, unsurpassed reliability, and low initial and operating costs. We report commercially available (element™), single-emitter-based, 9xx nm pump sources with powers up to 130 W in a 105 μm fiber and 250 W in a 200 μm fiber. This combination of high power and high brightness translates into improved fiber laser performance, e.g., simultaneously achieving high nonlinear thresholds and excellent beam quality at kW power levels. Wavelength-stabilized, 976 nm versions of these pumps are available for applications requiring minimization of the gain-fiber length (e.g., generation of high-peak-power pulses). Recent prototypes have achieved output powers up to 300 W in a 200 μm fiber. Extensive environmental and life testing at both the chip and module level under accelerated and real-world operating conditions have demonstrated extremely high reliability, with innovative designs having eliminated package-induced-failure mechanisms. Finally, we report integrated Pump Modules that provide < 1.6 kW of fiber-coupled power conveniently formatted for fiber-laser pumping or direct-diode applications; these 19” rack-mountable, 2U units combine the outputs of up to 14 elements™ using fused-fiber combiners, and they include high-efficiency diode drivers and safety sensors.


Proceedings of SPIE | 2014

High-power fiber-coupled diode lasers with superior brightness, efficiency, and reliability

Keith Kennedy; M. Hemenway; W. Urbanek; Kylan Hoener; Kirk Price; Ling Bao; D. Dawson; Manoj Kanskar; Jim Haden

Advances in high performance fiber coupled diode lasers continue to enable new applications as well as strengthen existing uses through progressive improvements in power and brightness [1]. These improvements are most notable in multi-kW direct diode systems and kW fiber laser platforms that effectively transform better beam quality into superior system performance and in DPSS (Diode pumped solid state) application striving to scale TEM00 (fundamental transverse mode) power. We report on our recent single-emitter based fiber-coupled product platform, the elementTM, that addressed these applications at 8xx/9xx nm with optical powers over 200W in a range of fiber core sizes down to 105um and 0.14NA (Numerical Aperture). The product is a culmination of numerous packaging improvements: improving wall plug efficiencies (~50% electrical-to-optical) while improving volume manufacturability, enabling lower costs, improving usable chip brightness by, < 20% over previous generation chips, and increasing the reliable output power to 15W per chip. We additionally report on current developments to extend the power of the product platform to as high as 300W. This will be realized primarily through new chip architectures projected to further increase the useable chip brightness by an additional 20 % and correspondingly scaling reliable output powers. Second order improvements are proposed in packaging enhancements that capitalize on the increased chip power and brightness as well as expand the package’s thermal capabilities. Finally, an extended performance roadmap will translate expected power advances and increasing volumes into a projection of relative


Laser Technology for Defense and Security XIV | 2018

High-temperature diode laser pumps for low SWaP directed energy lasers (Conference Presentation)

Zhigang Chen; Manoj Kanskar; Ling Bao; Mark DeVito; Mike Grimshaw; X. Guan; M. Hemenway; Rob Martinsen; W. Urbanek; Jim Zhang; Shiguo Zhang

/W decreases over the next several years.


High-Power Diode Laser Technology XVI | 2018

Improvement in reduced-mode (REM) diodes enable 300 W from 105-µm 0.15-NA fiber-coupled modules

Manoj Kanskar; Ling Bao; Zhigang Chen; D. Dawson; Weimin Dong; Mike Grimshaw; Xing Guan; David M. Hemenway; Robert J. Martinsen; W. Urbanek; Shiguo Zhang; Mark DeVito

Kilowatt-class fiber lasers and amplifiers are becoming increasingly important building blocks for power-scaling laser systems in various architectures for directed energy applications. Currently, state-of-the-art Yb-doped fiber lasers operating near 1060 nm operate with optical-to-optical power-conversion efficiency of about 66%. State-of-the-art fiber-coupled pump diodes near 975 nm operate with about 50% electrical-to-fiber-coupled optical power conversion efficiency at 25C heatsink temperature. Therefore, the total system electrical-to-optical power conversion efficiency is about 33%. As a result, a 50-kW fiber laser will generate 75 kW of heat at the pump module and 25 kW at the fiber laser module with a total waste heat of 100 kW. It is evident that three times as much waste heat is generated at the pump module. While improving the efficiency of the diodes primarily reduces the input power requirement, increasing the operating temperature primarily reduces the size and weight for thermal management systems. We will discuss improvement in diode laser design, thermal resistance of the package as well as improvement in fiber-coupled optical-to-optical efficiency to achieve high efficiency at higher operating temperature. These factors have a far-reaching implication in terms of significantly improving the overall SWAP requirements thus enabling DEW-class fiber lasers on airborne and other platforms.


High-Power Diode Laser Technology XVI | 2018

Continued advances in high brightness fiber-coupled laser modules for efficient pumping of fiber and solid-state lasers

David M. Hemenway; Zhigang Chen; D. Dawson; Ling Bao; Manoj Kanskar; Mark DeVito; Robert J. Martinsen; W. Urbanek

High-power, high-brightness diode lasers have been pursued for many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, ~915 nm – and ~976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. As a result, there have been many technical thrusts for driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, nLIGHT element®. In the past decade, the power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brightness and the development of techniques for efficiently coupling multiple emitters. In this paper, we demonstrate further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new chip technology using x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report record 315 W output from a 2×12 nLIGHT element with 105 μm diameter fiber using x-REM diodes and these diodes will allow next generation of fiber-coupled product capable of 250W output power from 105 μm/0.15 NA beam at 915 nm.


Components and Packaging for Laser Systems IV | 2018

Next-generation industrial fiber lasers enabled by high-performance components

C. Rivera; Keith Kennedy; S. Hampton; E. Soukup; Aaron Brown; D. Dawson; W. Urbanek; M. DeVito; L. DeVito; Ling Bao; Joona Koponen; K. Gross; Dahv A. Kliner; Brian Victor; Geoff Fanning; David Balsley; Roger L. Farrow; R. Hawke; Mitch Reynolds; A. Hodges; J. Emery; K. Almonte; M. Nelson; B. Foley; David Martin Hemenway

Both the fibber laser and diode-pumped solid-state laser market continue to drive advances in pump diode module brightness. We report on the continued progress by nLIGHT to develop and deliver the highest brightness diode-laser pumps using single-emitter technology. Continued advances in multimode laser diode technology [13] and fiber-coupling techniques have enabled higher emitter counts in the element packages, enabling us to demonstrate 305 W into 105 μm – 0.16 NA. This brightness improvement is achieved by leveraging our prior-reported package re-optimization, allowing an increase in the emitter count from two rows of nine emitters to two rows of twelve emitters. Leveraging the two rows off twelve emitter architecture,, product development has commenced on a 400 W into 200 μm – 00.16 NA package. Additionally, the advances in pump technology intended for CW Yb-doped fiber laser pumping has been leveraged to develop the highest brightness 793 nm pump modules for 2 μm Thulium fiber laser pumping, generating 150 W into 200 μm – 0.18 NA and 100 W into 105 μm – 0.15 NA. Lastly, renewed interest in direct diode materials processing led us to experiment with wavelength multiplexing our existing state of the art 200 W, 105 μm – 00.15 NA package into a combined output of 395 WW into 105 μm –– 0.16 NA.


Proceedings of SPIE | 2017

Continued improvement in reduced-mode (REM) diodes enable 272 W from 105 μm 0.15 NA beam

Manoj Kanskar; Ling Bao; Zhigang Chen; D. Dawson; Mark DeVito; Weimin Dong; Mike Grimshaw; X. Guan; M. Hemenway; Robert J. Martinsen; W. Urbanek; Shiguo Zhang

Next-generation industrial fiber lasers enable challenging applications that cannot be addressed with legacy fiber lasers. Key features of next-generation fiber lasers include robust back-reflection protection, high power stability, wide power tunability, high-speed modulation and waveform generation, and facile field serviceability. These capabilities are enabled by high-performance components, particularly pump diodes and optical fibers, and by advanced fiber laser designs. We summarize the performance and reliability of nLIGHT diodes, fibers, and next-generation industrial fiber lasers at power levels of 500 W – 8 kW. We show back-reflection studies with up to 1 kW of back-reflected power, power-stability measurements in cw and modulated operation exhibiting sub-1% stability over a 5 – 100% power range, and high-speed modulation (100 kHz) and waveform generation with a bandwidth 20x higher than standard fiber lasers. We show results from representative applications, including cutting and welding of highly reflective metals (Cu and Al) for production of Li-ion battery modules and processing of carbon fiber reinforced polymers.


Proceedings of SPIE | 2016

Reduced-mode (REM) diodes enable high brightness fiber-coupled modules

Manoj Kanskar; Ling Bao; Zhigang Chen; D. Dawson; Mark DeVito; Weimin Dong; Mike Grimshaw; X. Guan; M. Hemenway; Keith Kennedy; Robert J. Martinsen; W. Urbanek; Shiguo Zhang

High-power, high-brightness diode lasers from 8xx nm to 9xx nm have been pursued in many applications including fiber laser pumping, materials processing, solid-state laser pumping, and consumer electronics manufacturing. In particular, 915 nm - 976 nm diodes are of interest as diode pumps for the kilowatt CW fiber lasers. Thus, there have been many technical efforts on driving the diode lasers to have both high power and high brightness to achieve high-performance and reduced manufacturing costs. This paper presents our continued progress in the development of high brightness fiber-coupled product platform, elementTM. In the past decade, the amount of power coupled into a single 105 μm and 0.15 NA fiber has increased by over a factor of ten through improved diode laser brilliance and the development of techniques for efficiently coupling multiple emitters into a single fiber. In this paper, we demonstrate the further brightness improvement and power-scaling enabled by both the rise in chip brightness/power and the increase in number of chips coupled into a given numerical aperture. We report a new x-REM design with brightness as high as 4.3 W/mm-mrad at a BPP of 3 mm-mrad. We also report the record 272W from a 2×9 elementTM with 105 μm/0.15 NA beam using x-REM diodes and a new product introduction at 200W output power from 105 μm/0.15 NA beam at 915 nm.

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