Wan-Tsang Wang

Dresselhaus effect in bulk wurtzite materials

The spin-splitting energies of the conduction band for ideal wurtzite materials are calculated within the nearest-neighbor tight-binding method. It is found that ideal wurtzite bulk inversion asymmetry yields not only a spin-degenerate line (along the kz axis) but also a minimum-spin-splitting surface, which can be regarded as a spin-degenerate surface in the form of bkz2−k‖2=0 (b≈4) near the Γ point. This phenomenon is referred to as the Dresselhaus effect (defined as the cubic-in-k term) in bulk wurtzite materials because it generates a term γwz(bkz2−k‖2)(σxky−σykx) in the two-band k∙p Hamiltonian.

Wurtzite structure effects on spin splitting in GaN/AlN quantum wells

A different mechanism (

Optical anisotropy in [hkil]-oriented wurtzite semiconductor quantum wells

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Application of block diagonal technique to Hamiltonian matrix in performing spin-splitting calculations for GaAs zincblende bulk and quantum wells

coupling) accounts for the spin splitting of wurtzite

Spin-degenerate surface and the resonant spin lifetime transistor in wurtzite structures

\mathrm{GaN}

Effect of bulk inversion asymmetry on optical transitions of zinc blende semiconductor quantum wells

, that originated from the intrinsic wurtzite effects (band folding and structure inversion asymmetry). The band-folding effect generates two conduction bands (

Effects of Giant Optical Anisotropy in R-plane GaN/AlGaN Quantum Wells by Valence Band Mixing

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Spin-splitting calculation for zincblende semiconductors using an atomic bond-orbital model

and

k.p WURTZITE HAMILTONIAN AND OPTICAL MATRIX WITH BULK INVERSION ASYMMETRY

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P-wave-enhanced spin field effect transistor and recent patents.

), in which