Wei-Ming Huang

15.4: Excellent Performance of Indium-Oxide-Based Thin-Film Transistors by DC Sputtering

Results on indium-oxide-based transparent oxide TFTs, which the active layer is prepared by DC sputtering, are presented. The fabricated TOS TFTs show high mobility (37 cm2/V-s), high ON/OFF current ratio and large on-state current. Fabricating oxide TFTs on temperature-sensitive substrates is also attainable owing to the low temperature process of the active layer preparation.

Integrated Ambient Light Sensor With Nanocrystalline Silicon on a Low-Temperature Polysilicon Display Panel

A novel integrated ambient light sensor using nanocrystalline silicon fabricated using low-temperature polysilicon technology has been developed on a display panel. The photosensing structure of the silicon nanocrystals embedded in a dielectric film sandwiched between the bottom metal and top indium-thin-oxide electrodes perfectly eliminates backlight noise, which is a problem typical of conventional p-i-n photodiodes integrated into a liquid-crystal display. Experimental results indicate that the Si-nanocrystal photosensor has better performances in dark current and quantum efficiency than those of the p-i-n diode. The Si-nanocrystal photosensor also exhibited response linearity and speed comparable to the p-i-n diode. In terms of long-term operation and reliability, the lifetime of the Si-nanocrystal photosensor is roughly two orders longer than that of the p-i-n diode. The Si-nanocrystal ambient light sensor has considerable flexibility in the design of spectrum, geometry, and the readout circuit, which is achieved by adjusting the nanocrystal size and applying a vertical stacking structure. The Si-nanocrystal photosensor can be a promising low-cost PMOS-only solution for various photosensing applications on display panels.

16.1: Distinguished Paper: Rollable Electrophoretic Display with Amorphous‐Silicon Gate Driver Circuit Integrated

Highly flexible electrophoretic display with gate driver circuits integrated was demonstrated. Beginning from the essential components such as TFTs, resistors and capacitors, the authors finally design a GOA-embedded display which can withstand 10,000 rolling cycles of 20 mm radius without any line defect and optic performance degradation.

P‐109: Drain Bias Effect on Characteristics of Reverse Sub‐threshold Region

We have investigated device characteristics utilizing top-gate structure to define the electric characteristics and qualities the value of drain-source current. At the same time, the device operation for high drain voltage mechanism was also investigated. The new terminal with positively top gate bias can significantly decrease the reverse sub-threshold leakage current more than one order and keep on 100% Ion improvement for high drain bias operation.

22.4: In‐Cell Multiple Ambient Light Sensor (ALSs) LCD Integration Using Si‐based Photonic Sensor by a‐Si TFT Technology

We have developed a new AMLCD with multiple ambient light sensors (ALSs) for reducing backlight (BL) power consumption, and false sensing of ambient illuminance. ALSs perform well in showing BL control for power-saving, even though one of the sensors is covered by a finger shadow. Architecture of integrated ALS with a-Si and LTPS technologies are presented. We fabricate the in-cell, and wide-dynamic-sensing ALSs display using new light sensor technology. Photo-electrical characteristics with well linearity and reliability under long-term operation were observed.