Wei-Ning Huang

Epitaxial growth of CoSi2 on both (111) and (100) Si substrates by multistep annealing of a ternary Co/Ti/Si system

Formation of CoSi2 films by the reaction of ternary Co/Ti/Si system has been investigated. Ti and Co films were sequentially deposited on Si substrates by ion beam sputtering. It succeeded in the growth of epitaxial single‐crystalline CoSi2 films on both Si(111) and Si(100) substrates through a multistep annealing process with temperatures from 550 to 900 °C in a nitrogen environment. A thin layer of TiN was formed on top of the epitaxial CoSi2. The values of Rutherford backscattering spectrometry/channeling minimum yield χmin for the epitaxial CoSi2 films were in the range of 10%–14%. The epitaxial CoSi2 grown on Si(111) was found to be composed of type B.

Solid state reaction of Co,Ti with epitaxially‐grown Si1−xGex film on Si(100) substrate

The solid state reaction of Co,Ti with an epitaxially grown Si1−xGex strained layer is investigated in this article. The reaction was performed in a rapid thermal annealing system. The resulting films were characterized by Rutherford backscattering, Auger electron spectroscopy, x‐ray photoelectron spectroscopy, x‐ray diffractometry, and scanning electron microscopy. The electrical resistivity and Hall effect were measured in the temperature range of 77–300 K. Rapid thermal annealing of Co/Si0.8Ge0.2 at 650 °C results in a Co(Si0.9Ge0.1) film with cubic crystalline structure. At higher temperature CoSi2 is formed with Ge segregation towards the surface. After a multi‐step annealing, a highly oriented CoSi2 layer can be grown. For TiN/Ti/SiGe, the ternary phase of Ti(Si1−yGey)2 is formed, with a smooth surface and with resistivity comparable to the lowest value exhibited by TiSi2. The Co/Ti/SiGe/Si reaction is studied for the first time, demonstrating that the uniformity of Co/SiGe reaction is improved by a...

Electrical transport properties of CoSi2 and Co(SixGe1-x)2 films formed by different methods

The electrical transport properties of CoSi2 and Co(SixGe1−x)2 thin films formed by solid state interaction and co‐evaporation in the range of 4–300 K were studied. The Hall effect data indicate a hole carrier conduction in all samples. The rapid thermal annealed CoSi2 exhibits a typical metallic conduction with a residual resistivity of 3.3‐μΩ‐cm and room‐temperature (RT) resistivity of 15 μΩ cm. The co‐evaporated CoSi2 and Co(Si0.9Ge0.1)2 films after low temperature annealing up to 250 °C show a low resistivity of 70–80 μΩ cm at RT and change little down to 4 K. The hole carrier density of all the samples studied has values close to 2–3×1022 cm−3, while the carrier Hall mobility has large differences.

CoSi/sub 2//SiGe contact formation by Co/a-SiGe/Si solid state reaction

The Co/a-SiGe/Si solid state reaction has been studied in this paper. The experimental results demonstrated the simultaneously SiGe/Si solid phase hetero-epitaxy and CoSi/sub 2//SiGe contact formation. The SiGe crystallization is a result of the Ge rejection and interdiffusion with Si during the Co/a-SiGe/Si ternary interaction.

Study on solid phase epitaxy of sputtered SiGe film

The experimental results on solid phase epitaxy of ion beam sputtered SiGe film on Si(100) substrate are presented. The SiGe/Si hetero-epitaxy is achieved by high temperature thermal processes such as diffusion, annealing, and oxidation. X-ray diffraction, Raman spectroscopy, and Rutherford backscattering spectroscopy show the epitaxial character of SiGe film on Si substrate.

Study on solid state reaction of TiN/Co/Ti multi-layer with amorphous silicon

Solid state reaction of TiN/Co/Ti multilayer with PECVD amorphous silicon has been studied. Experimental results show that uniform polycrystalline CoSi/sub 2/ with good thermal stability and smooth surface can be obtained after thermal annealing.

Epitaxial growth of CoSi/sub 2/ by Co/Ti/Si solid phase reaction and its application in salicide technology

Co/Ti/Si ternary solid phase interaction is a new method of CoSi/sub 2//Si hetero-epitaxy. The experimental results on Co/Ti/Si solid state interaction behavior, epitaxial growth of CoSi/sub 2/ on Si substrate, self-aligned silicidation of source/drain contact and polysilicon gate by Co/Ti/Si solid phase reaction, and applications of the new salicide technology in device fabrication are described and discussed.

Interfacial reaction of bilayer Co/Ti with Si1-xGex epitaxially grown on Si(100)

The interfacial reaction of bilayer Co/Ti with epitaxially grown Si1-xGex layer with x equals 0.2 was investigated in this work. The multilayer films were characterized by Rutherford Backscattering Spectroscopy (RBS), Auger Electron Spectroscopy (AES), X-ray Photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The experimental results show the formation of a multi-layer of TiN(O)/CoSi2(Ge)/Si. A highly preferential orientation was observed for the formed CoSi2(Ge) layer. The resulted resistivity of Co/Ti/SiGe/Si after a high temperature annealing is close to that of typical CoSi2 film.

Epitaxial CoSi2 film grown on Si substrate by solid interaction of Co/Ti/Si and TiN/Co/Ti/Si multilayer

CoSi2 is being investigated intensively for microelectronics application recently. In this paper a new method of growing an epitaxial CoSi2 film by solid state reaction of Co/Ti/Si and TiN/Co/Ti/Si multilayer is described. The variation of structure and sheet resistance of the film with thermal annealing temperature and time has bee investigated. The kinetics and mechanism of the CoSi2 solid-state epitaxy are discussed.