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Dive into the research topics where Wei Pan is active.

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Featured researches published by Wei Pan.


ACS Applied Materials & Interfaces | 2016

Antimony/Graphitic Carbon Composite Anode for High-Performance Sodium-Ion Batteries.

Xin Zhao; Sean Vail; Yuhao Lu; Jie Song; Wei Pan; David Evans; Jong-Jan Lee

Although the room-temperature rechargeable sodium-ion battery has emerged as an attractive alternative energy storage solution for large-scale deployment, major challenges toward practical sodium-ion battery technology remain including identification and engineering of anode materials that are both technologically feasible and economical. Herein, an antimony-based anode is developed by incorporating antimony into graphitic carbon matrices using low-cost materials and scalable processes. The composite anode exhibits excellent overall performance in terms of packing density, fast charge/discharge capability and cyclability, which is enabled by the conductive and compact graphitic network. A full cell design featuring this composite anode with a hexacyanometallate cathode achieves superior power output and low polarization, which offers the potential for realizing a high-performance, cost-effective sodium-ion battery.


MRS Proceedings | 2000

Study of SiH 4 -based PECVD Low-k Carbon-doped Silicon Oxide

Hongning Yang; Douglas J. Tweet; Lisa H. Stecker; Wei Pan; David R. Evans; Sheng-Teng Hsu

In previous studies, low-k carbon-doped silicon oxide (SiOC) films were deposited using organosilicon precursor: (CH 3 ) x SiH 4−x . In this paper, we present the properties of PECVD low-k SiOC films produced by using conventional SiH 4 based gas precursors. The SiH 4 based SiOC films have similar gross physical and electrical characteristics to those of (CH 3 ) x SiH 4−x based SiOC. Since the precursors are inexpensive, commercially available and convenient to operate for existing tools, the process should not require additional cost as compared with that of PECVD silicon dioxide. We demonstrate the feasibility of integrating Cu with SiOC on damascene interconnection. The evaluation on electrical performance of the Cu/SiOC based damascene structure will be discussed.


Archive | 2000

Method of forming amorphous conducting diffusion barriers

Sheng Teng Hsu; Douglas J. Tweet; Wei Pan; David R. Evans


Archive | 2002

Method of fabricating self-aligned cross-point memory array

Sheng Teng Hsu; Wei Pan; Wei-Wei Zhuang


Archive | 2003

Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer

Wei-Wei Zhuang; Tingkai Li; David R. Evans; Sheng Teng Hsu; Wei Pan


Archive | 2003

Method for chemical mechanical polishing of thin films using end-point indicator structures

Wei Pan; David R. Evans; Allen Burmaster


Archive | 2003

Method for forming an asymmetric crystalline structure memory cell

Sheng Teng Hsu; Tingkal Li; David R. Evans; Wei-Wei Zhuang; Wei Pan


Archive | 2002

Source alternating MOCVD processes to deposit tungsten nitride thin films as barrier layers for MOCVD copper interconnects

Wei Pan; David R. Evans; Sheng Teng Hsu


Archive | 2002

Preparation of LCPMO thin films which have reversible resistance change properties

Wei-Wei Zhuang; Sheng Teng Hsu; Wei Pan; Masayuki Tajiri


Archive | 2001

Method of barrier metal surface treatment prior to Cu deposition to improve adhesion and trench filling characteristics

Wei Pan; Jer-shen Maa; David R. Evans; Sheng Teng Hsu

Collaboration


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David R. Evans

Portland State University

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Jie Song

University of Texas at Austin

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Sean Vail

Oregon State University

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Yuhao Lu

University of Texas at Austin

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Jong-Jan Lee

Oregon State University

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Xin Zhao

University of Texas at Austin

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Jer-shen Maa

National Chiao Tung University

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