Weida Wu

Conduction of topologically protected charged ferroelectric domain walls.

We report on the observation of nanoscale conduction at ferroelectric domain walls in hexagonal HoMnO(3) protected by the topology of multiferroic vortices using in situ conductive atomic force microscopy, piezoresponse force microscopy, and Kelvin-probe force microscopy at low temperatures. In addition to previously observed Schottky-like rectification at low bias [Phys. Rev. Lett. 104, 217601 (2010)], conductance spectra reveal that negatively charged tail-to-tail walls exhibit enhanced conduction at high forward bias, while positively charged head-to-head walls exhibit suppressed conduction at high reverse bias. Our results pave the way for understanding the semiconducting properties of the domains and domain walls in small-gap ferroelectrics.

Room-Temperature Multiferroic Hexagonal LuFeO3 Films

The crystal and magnetic structures of single-crystalline hexagonal LuFeO(3) films have been studied using x-ray, electron, and neutron diffraction methods. The polar structure of these films are found to persist up to 1050 K; and the switchability of the polar behavior is observed at room temperature, indicating ferroelectricity. An antiferromagnetic order was shown to occur below 440 K, followed by a spin reorientation resulting in a weak ferromagnetic order below 130 K. This observation of coexisting multiple ferroic orders demonstrates that hexagonal LuFeO(3) films are room-temperature multiferroics.

Bulk magnetoelectricity in the hexagonal manganites and ferrites

Improper ferroelectricity (trimerization) in the hexagonal manganites RMnO3 leads to a network of coupled structural and magnetic vortices that induce domain wall magnetoelectricity and magnetization (M), neither of which, however, occurs in the bulk. Here we combine first-principles calculations, group-theoretic techniques and microscopic spin models to show how the trimerization not only induces a polarization (P) but also a bulk M and bulk magnetoelectric (ME) effect. This results in the existence of a bulk linear ME vortex structure or a bulk ME coupling such that if P reverses so does M. To measure the predicted ME vortex, we suggest RMnO3 under large magnetic field. We suggest a family of materials, the hexagonal RFeO3 ferrites, also display the predicted phenomena in their ground state.

Collective magnetism at multiferroic vortex domain walls.

Cross-coupled phenomena of multiferroic domains and domain walls are of fundamental scientific and technological interest. Using cryogenic magnetic force microscopy, we find alternating net magnetic moments at ferroelectric domain walls around vortex cores in multiferroic hexagonal ErMnO(3), which correlate with each other throughout the entire vortex network. This collective nature of domain wall magnetism originates from the uncompensated Er(3+) moments at domain walls and the self-organization of the vortex network. Our results demonstrate that the collective domain wall magnetism can be controlled by external magnetic fields and represent a major advancement in the manipulation of local magnetic moments by harnessing cross-coupled domain walls.

Direct visualization of magnetoelectric domains

The coupling between the magnetic and electric dipoles in multiferroic and magnetoelectric materials holds promise for conceptually novel electronic devices. This calls for the development of local probes of the magnetoelectric response, which is strongly affected by defects in magnetic and ferroelectric ground states. For example, multiferroic hexagonal rare earth manganites exhibit a dense network of boundaries between six degenerate states of their crystal lattice, which are locked to both ferroelectric and magnetic domain walls. Here we present the application of a magnetoelectric force microscopy technique that combines magnetic force microscopy with in situ modulating high electric fields. This method allows us to image the magnetoelectric response of the domain patterns in hexagonal manganites directly. We find that this response changes sign at each structural domain wall, a result that is corroborated by symmetry analysis and phenomenological modelling, and provides compelling evidence for a lattice-mediated magnetoelectric coupling. The direct visualization of magnetoelectric domains at mesoscopic scales opens up explorations of emergent phenomena in multifunctional materials with multiple coupled orders.

Record Surface State Mobility and Quantum Hall Effect in Topological Insulator Thin Films via Interface Engineering

Material defects remain as the main bottleneck to the progress of topological insulators (TIs). In particular, efforts to achieve thin TI samples with dominant surface transport have always led to increased defects and degraded mobilities, thus making it difficult to probe the quantum regime of the topological surface states. Here, by utilizing a novel buffer layer scheme composed of an In2Se3/(Bi0.5In0.5)2Se3 heterostructure, we introduce a quantum generation of Bi2Se3 films with an order of magnitude enhanced mobilities than before. This scheme has led to the first observation of the quantum Hall effect in Bi2Se3.

Microscopic evidence of a strain-enhanced ferromagnetic state in LaCoO3 thin films

Strain-induced modification of magnetic properties of lightly hole doped epitaxial LaCoO3 thin films on different substrates were studied with variable temperature magnetic force microscopy (MFM). Real space observation at 10 K reveals the formation of the local magnetic clusters on a relaxed film grown on LaAlO3 (001). In contrast, a ferromagnetic ground state has been confirmed for tensile-strained film on SrTiO3 (001), indicating that strain is an important factor in creating the ferromagnetic state. Simultaneous atomic force microscopy and MFM measurements reveal nanoscale defect lines for the tensile-strained films, where the structural defects have a large impact on the local magnetic properties.Strain-induced modification of magnetic properties of lightly hole doped epitaxial LaCoO3 thin films on different substrates were studied with variable temperature magnetic force microscopy (MFM). Real space observation at 10 K reveals the formation of the local magnetic clusters on a relaxed film grown on LaAlO3 (001). In contrast, a ferromagnetic ground state has been confirmed for tensile-strained film on SrTiO3 (001), indicating that strain is an important factor in creating the ferromagnetic state. Simultaneous atomic force microscopy and MFM measurements reveal nanoscale defect lines for the tensile-strained films, where the structural defects have a large impact on the local magnetic properties.

A compact dual-tip STM design

A compact dual-tip scanning tunneling microscope (STM) design that achieves both rigidity and stability is presented. We constructed a prototype unit to perform tests in ambient conditions. The two STM tips were able to maintain a stable tunneling condition with the sample surface simultaneously. Topographic images of a fresh cleaved graphite were taken simultaneously from the two tips. A common feature found in both images indicates that the two tunneling spots are ~800 nm apart

Piezoresponse force microscopy of domains and walls in multiferroic HoMnO3

We report ambient piezoresponse force microscopy (PFM) studies of the multiferroic hexagonal manganite HoMnO3 performed on the cleaved (110) surface of a single-crystal specimen. By changing the sample orientation with respect to the cantilever, we observed an unexpected out-of-plane PFM signal at domain walls, which depends on domain wall orientation, in addition to the expected in-plane PFM signal in domains. Further studies confirmed that the domain wall PFM signal results from an out-of-plane displacement, which can be explained by a simple model of local elastic response with the conservation of unit cell volume at head-on domain walls.

Toward the Intrinsic Limit of the Topological Insulator Bi 2 Se 3

Combining high resolution scanning tunneling microscopy and first principles calculations, we identified the major native defects, in particular the Se vacancies and Se interstitial defects, that are responsible for the bulk conduction and nanoscale potential fluctuations in single crystals of archetypal topological insulator Bi_{2}Se_{3}. Here it is established that the defect concentrations in Bi_{2}Se_{3} are far above the thermodynamic limit, and that the growth kinetics dominate the observed defect concentrations. Furthermore, through careful control of the synthesis, our tunneling spectroscopy suggests that our best samples are approaching the intrinsic limit with the Fermi level inside the band gap without introducing extrinsic dopants.