Y. Horibe

Formation of isomorphic Ir3+ and Ir4+ octamers and spin dimerization in the spinel CuIr2S4.

Inorganic compounds with the AB2X4 spinel structure have been studied for many years, because of their unusual physical properties. The spinel crystallographic structure, first solved by Bragg in 1915, has cations occupying both tetrahedral (A) and octahedral (B) sites. Interesting physics arises when the B-site cations become mixed in valence. Magnetite (Fe3O4) is a classic and still unresolved example, where the tendency to form ordered arrays of Fe2+ and Fe3+ ions competes with the topological frustration of the B-site network. The CuIr2S4 thiospinel is another example, well known for the presence of a metal–insulator transition at 230 K with an abrupt decrease of the electrical conductivity on cooling accompanied by the loss of localized magnetic moments. Here, we report the determination of the crystallographic structure of CuIr2S4 below the metal–insulator transition. Our results indicate that CuIr2S4 undergoes a simultaneous charge-ordering and spin-dimerization transition—a rare phenomenon in three-dimensional compounds. Remarkably, the charge-ordering pattern consists of isomorphic octamers of Ir83+S24 and Ir84+S24 (as isovalent bi-capped hexagonal rings). This extraordinary arrangement leads to an elegant description of the spinel structure, but represents an increase in complexity with respect to all the known charge-ordered structures, which are typically based on stripes, slabs or chequerboard patterns.

Thickness-dependent bulk properties and weak antilocalization effect in topological insulator Bi2Se3

We show that a number of transport properties in topological insulator (TI) Bi

Conduction of topologically protected charged ferroelectric domain walls.

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Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Se

Direct observation of the proliferation of ferroelectric loop domains and vortex-antivortex pairs.

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Self-organization, condensation, and annihilation of topological vortices and antivortices in a multiferroic

exhibit striking thickness dependences over a range of up to five orders of thickness (3 nm--170 \ensuremath{\mu}m). Volume carrier density decreased with thickness, presumably due to diffusion-limited formation of selenium vacancies. Mobility increased linearly with thickness in the thin film regime and saturated in the thick limit. The weak antilocalization effect was dominated by a single two-dimensional channel over two decades of thickness. The sublinear thickness-dependence of the phase coherence length suggests the presence of strong coupling between the surface and bulk states.

Anionic depolymerization transition in IrTe2.

We report on the observation of nanoscale conduction at ferroelectric domain walls in hexagonal HoMnO(3) protected by the topology of multiferroic vortices using in situ conductive atomic force microscopy, piezoresponse force microscopy, and Kelvin-probe force microscopy at low temperatures. In addition to previously observed Schottky-like rectification at low bias [Phys. Rev. Lett. 104, 217601 (2010)], conductance spectra reveal that negatively charged tail-to-tail walls exhibit enhanced conduction at high forward bias, while positively charged head-to-head walls exhibit suppressed conduction at high reverse bias. Our results pave the way for understanding the semiconducting properties of the domains and domain walls in small-gap ferroelectrics.

Evolution of the Domain Topology in a Ferroelectric

Abstract Atomically sharp epitaxial growth of Bi 2 Se 3 films is achieved on Si(111) substrate with molecular beam epitaxy. Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi 2 Se 3 films on Si substrates. With a single-step high temperature growth, second phase clusters are formed at an early stage. On the other hand, with low temperature growth, the film tends to be disordered even in the absence of a second phase. With a low temperature initial growth followed by a high temperature growth, second-phase-free atomically sharp interface is obtained between Bi 2 Se 3 and Si substrate, as verified by reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM) and X-ray diffraction. The lattice constant of Bi 2 Se 3 is observed to relax to its bulk value during the first quintuple layer according to RHEED analysis, implying the absence of strain from the substrate. TEM shows a fully epitaxial structure of Bi 2 Se 3 film down to the first quintuple layer without any second phase or an amorphous layer.

Coercivity and nanostructure in magnetic spinel Mg(Mn,Fe)2O4

We discovered stripe patterns of trimerization-ferroelectric domains in hexagonal REMnO(3) (RE=Ho,···,Lu) crystals (grown below ferroelectric transition temperatures (T(c)), reaching up to 1435 °C), in contrast with the vortex patterns in YMnO(3). These stripe patterns roughen with the appearance of numerous loop domains through thermal annealing just below T(c), but the stripe domain patterns turn to vortex-antivortex domain patterns through a freezing process when crystals cross T(c) even though the phase transition appears to not be Kosterlitz-Thouless-type. The experimental systematics are compared with the results of our six-state clock model simulation and also the Kibble-Zurek mechanism for trapped topological defects.

X-RAY-INDUCED DISORDERING OF THE DIMERIZATION PATTERN AND APPARENT LOW-TEMPERATURE ENHANCEMENT OF LATTICE SYMMETRY IN SPINEL CUIR2S4

The interaction among topological defects can induce novel phenomena such as disclination pairs in liquid crystals and superconducting vortex lattices. Nanoscale topological vortices with swirling ferroelectric, magnetic, and structural antiphase relationships were found in multiferroic h-YMnO3. Herein, we report the discovery of intriguing, but seemingly irregular configurations of a zoo of topological vortices and antivortices. These configurations can be neatly analyzed in terms of graph theory and reflect the nature of self-organized criticality in complexity phenomena. External stimuli such as chemistry-driven or electric poling can induce the condensation and eventual annihilation of topological vortex–antivortex pairs.