Wendell P. Noble | Researchain

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Publication

Featured researches published by Wendell P. Noble.

Archive | 2000

Memory cell having a vertical transistor with buried source/drain and dual gates

Wendell P. Noble; Leonard Forbes; Kie Y. Ahn

Archive | 2000

4 F2 folded bit line dram cell structure having buried bit and word lines

Wendell P. Noble; Leonard Forbes; Kie Y. Ahn

Archive | 1997

High density flash memory

Leonard Forbes; Wendell P. Noble

Archive | 1998

Trench DRAM cell with vertical device and buried word lines

Wendell P. Noble

Archive | 2006

Ultra high density flash memory

Wendell P. Noble; Leonard Forbes

Archive | 2000

Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor

Leonard Forbes; Wendell P. Noble

Archive | 2001

Memory cell with vertical transistor and buried word and body lines

Leonard Forbes; Wendell P. Noble; Kie Y. Ahn

Archive | 2000

Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor

Wendell P. Noble; Leonard Forbes

Archive | 1998

Programmable memory address decode array with vertical transistors

Leonard Forbes; Wendell P. Noble

Archive | 1997

Method of making memory cell with vertical transistor and buried word and body lines

Leonard Forbes; Wendell P. Noble; Kie Y. Ahn

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Collaboration

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Leonard Forbes

Micron Technology

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Eugene H. Cloud

Micron Technology

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Kie Y. Ahn

Micron Technology

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Alan R. Reinberg

Micron Technology

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Paul A. Farrar

Micron Technology

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