Wenna Du

Strong Exciton–Photon Coupling and Lasing Behavior in All-Inorganic CsPbBr3 Micro/Nanowire Fabry-Pérot Cavity

Macroscopic spontaneous coherence of exciton-polariton in semiconductor cavity is one important research field in condensed matter physics. All-inorganic micro/nanowire Fabry-Perot cavity with excellent optical performance makes it possible to realize strong coupling and lasing of exciton-photon at room temperature. In this work, we demonstrated strong coupling of exciton-photon and polariton lasing in CsPbBr3 micro/nanowires synthesized by CVD method. By exploring spatial resolved PL spectra of CsPbBr3 cavity, we observed mode volume dependent coupling strength , as well as significant increase in group index. Moreover, low threshold polariton lasing was achieved at room temperature within strong coupling regime; the polariton characteristic is confirmed by comparing lasing spectra with waveguided output spectra and the dramatically reduced lasing threshold. Our present results provide new avenues to achieve high coupling strengths potentially enabling application of exciting phenomena such as Bose-Einstein condensation of polaritons, efficient light-emitting diodes and lasers.

Tuning Excitonic Properties of Monolayer MoS2 with Microsphere Cavity by High-Throughput Chemical Vapor Deposition Method

Tuning the optical properties of 2D direct bandgap semiconductors is crucial for applications in photonic light source, optical communication, and sensing. In this work, the excitonic properties of molybdenum disulphide (MoS2 ) are successfully tuned by directly depositing it onto silica microsphere resonators using chemical vapor deposition method. Multiple whispering gallery mode (WGM) peaks in the emission wavelength range of ≈650-750 nm are observed under continuous wave excitation at room temperature. Time-resolved photoluminescence (TRPL) and femtosecond transient absorption (TA) spectroscopy are conducted to study light-matter interaction dynamics of the MoS2 microcavities. TRPL study suggests radiative recombination rate of carrier-phonon scattering and interband transition processes in MoS2 is enhanced by a factor of ≈1.65 due to Purcell effect in microcavities. TA spectroscopy study shows modulation of the interband transition process mainly occurs at PB-A band with an estimated F ≈ 1.60. Furthermore, refractive index sensing utilizing WGM peaks of MoS2 is established with sensitivity up to ≈150 nm per refractive index unit. The present work provides a large-scale and straightforward method for coupling atomically thin 2D gain media with cavities for high-performance optoelectronic devices and sensors.

Fabry-Pérot Oscillation and Room Temperature Lasing in Perovskite Cube-Corner Pyramid Cavities

Recently, organometal halide perovskite-based optoelectronics, particularly lasers, have attracted intensive attentions because of its outstanding spectral coherence, low threshold, and wideband tunability. In this work, high-quality CH3 NH3 PbBr3 single crystals with a unique shape of cube-corner pyramids are synthesized on mica substrates using chemical vapor deposition method. These micropyramids naturally form cube-corner cavities, which are eminent candidates for small-sized resonators and retroreflectors. The as-grown perovskites show strong emission ≈530 nm in the vertical direction at room temperature. A special Fabry-Pérot (F-P) mode is employed to interpret the light confinement in the cavity. Lasing from the perovskite pyramids is observed from 80 to 200 K, with threshold ranging from ≈92 µJ cm-2 to 2.2 mJ cm-2 , yielding a characteristic temperature of T0 = 35 K. By coating a thin layer of Ag film, the threshold is reduced from ≈92 to 26 µJ cm-2 , which is accompanied by room temperature lasing with a threshold of ≈75 µJ cm-2 . This work advocates the prospect of shape-engineered perovskite crystals toward developing micro-sized optoelectronic devices and potentially investigating light-matter coupling in quantum optics.

Ultrathin CsPbX3 Nanowire Arrays with Strong Emission Anisotropy

1D nanowires of all-inorganic lead halide perovskites represent a good architecture for the development of polarization-sensitive optoelectronic devices due to their high absorption efficient, emission yield, and dielectric constants. However, among as-fabricated perovskite nanowires with the lateral dimensions of hundreds nanometers so far, the optical anisotropy is hindered and rarely explored owing to the invalidating of electrostatic dielectric mismatch in the physical dimensions. Here, well-aligned CsPbBr3 and CsPbCl3 nanowires with thickness T down to 15 and 7 nm, respectively, are synthesized using a vapor phase van der Waals epitaxial method. Strong emission anisotropy with polarization ratio up to ≈0.78 is demonstrated in the nanowires with T < 40 nm due to the electrostatic dielectric confinement. With the increasing of thickness, the polarization ratio remarkably reduces monotonously to ≈0.17 until T ≈140 nm; and further oscillates in a small amplitude owing to the wave characteristic of light. These findings not only represent a demonstration of perovskite-based polarization-sensitive light sources, but also advance fundamental understanding of their polarization properties of perovskite nanowires.

Low Threshold Fabry-Pérot Mode Lasing from Lead Iodide Trapezoidal Nanoplatelets

Lead Iodide (PbI2 ) is a layered semiconductor with direct band gap holding great promises in green light emission and detection devices. Recently, PbI2 planar lasers are demonstrated using hexagonal whispering-gallery-mode microcavities, but the lasing threshold is quite high. In this work, lasing from vapor phase deposition derived PbI2 trapezoidal nanoplatelets (NPs) with threshold that is at least an order of magnitude lower than the previous value is reported. The growth mechanism of the trapezoidal NPs is explored and attributed to the synergistic effects of van der Waals interactions and lattice mismatching. The lasing is enabled by the population inversion of n = 1 excitons and the optical feedback is provided by the Fabry-Pérot oscillation between the side facets of trapezoidal NPs. The findings not only advance the understanding of growth and photophysics mechanism of PbI2 nanostructures but also provide ideas to develop low threshold ultrathin lasers.

High-Temperature Continuous-Wave Pumped Lasing from Large-Area Monolayer Semiconductors Grown by Chemical Vapor Deposition

The realization of low-energy-consumption lasers based on atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDCs) is crucial for the development of optical communications, flexible displays, and lasers on the chip level. However, among the as-demonstrated TMDC-based lasers so far, the gain materials are mainly achieved by a mechanical exfoliation approach accompanied by poor reproducibility and controllability. In this work, we report a controllable design for generating large-scale lasing from chemical vapor deposition (CVD)-derived high-quality monolayer MoS2 film. Strong continuous-wave optically driven whispering-gallery-mode lasing is achieved in a wide temperature range from 77 to 400 K. The eminent lasing performances result from the strong spatial confinement of carriers and the enhanced efficiency of spontaneous emission owing to the lensing and screening effects of silica microsphere cavities. These findings not only advance the fundamental understanding of 2D lasing effects but also provide solutions to fabricate low-cost, scalable, and integratable TMDC-based lasers.