William D. Goodhue

Terahertz behavior of optical components and common materials

As short range, ground based, surveillance systems operating at terahertz frequencies continue to evolve, increasing attention is being directed towards the behavior of dielectric materials at terahertz frequencies as well as the behavior of optical components used to control terahertz radiation. This work provides an overview of several terahertz optical components such as frequency selective filters, laser output couplers, artificial dielectrics, and electromagnetic absorbers. In addition, a database was established that contains terahertz properties of common materials that have been largely unexplored in this region of the spectrum. The database consists of transmittance and reflectance spectra of a variety of materials measured using Fourier transform infrared spectroscopy techniques from 175 GHz - 2 THz. In addition, ultra-stable, CO2 optically pumped, far-infrared gas lasers were used to collect fixed-frequency transmittance data at 326 GHz, 584 GHz, and 1.04 THz. A Gunn oscillator was used for measurements at 94 GHz.

NOVEL BROADBAND TERAHERTZ NEGATIVE REFRACTIVE INDEX METAMATERIALS: ANALYSIS AND EXPERIMENT

Broadband planar and non-planar negative refractive index (NRI) metamaterial (MTM) designs consisting of a periodically arranged split ring resonator and wire structures are developed in the terahertz (THz) frequency regime using the Finite-Difference Time- Domain (FDTD) method. The novel MTM designs generate a broad negative index of refraction (NIR) passband approximately two and a half times higher than those of the conventional SRR/wire structures, by using the same dimensions. Numerical simulations of wedge- and triangle-shaped metamaterials are used to prove the negative refractive index of the models. The fabricated MTMs exhibit passband characteristics which are in good agreement with the model results. The parametric studies of correlated factors further support these outcomes.

Terahertz inverse synthetic aperture radar (ISAR) imaging with a quantum cascade laser transmitter

A coherent transceiver using a THz quantum cascade (TQCL) laser as the transmitter and an optically pumped molecular laser as the local oscillator has been used, with a pair of Schottky diode mixers in the receiver and reference channels, to acquire high-resolution images of fully illuminated targets, including scale models and concealed objects. Phase stability of the received signal, sufficient to allow coherent image processing of the rotating target (in azimuth and elevation), was obtained by frequency-locking the TQCL to the free-running, highly stable optically pumped molecular laser. While the range to the target was limited by the available TQCL power (several hundred microwatts) and reasonably strong indoor atmospheric attenuation at 2.408 THz, the coherence length of the TQCL transmitter will allow coherent imaging over distances up to several hundred meters. Image data obtained with the system is presented.

Uniform InGaAs quantum dot arrays fabricated using nanosphere lithography

We demonstrate the fabrication of optically active uniform InGaAs quantum dot arrays by combining nanosphere lithography and bromine ion-beam-assisted etching on a single InGaAs/GaAs quantum well. A wide range of lateral dot sizes was achieved from an oxygen plasma nanosphere resizing process. The increased lateral confinement of carriers in the dots results in low temperature photoluminescence blueshifts from 0.5 to 11 meV. Additional quantization was achieved using a selective wet-etch process. Our model suggests the presence of a 70 nm dead layer in the outer InGaAs radial edge, which we believe to be a result of defects and dislocations introduced during the dry-etch process.

Development of Chiral Negative Refractive Index Metamaterials for the Terahertz Frequency Regime

A novel negative refractive index (NRI) chiral meta-material (MTM), based on the Y structure, has been designed and tested in the microwave and terahertz frequencies. In addition to providing magnetoelectric coupling, this MTM has a negative index of refraction passband that can be tuned in both the frequency of operation and bandwidth with lower losses compared to other known chiral structures. Group theory was used to analyze the magnetoelectric coupling of the Y-shaped structure and circuit analysis was used to aid in the design of the NRI material and full-wave finite difference time domain (FDTD) simulations were conducted to determine the transmission characteristics of the material. Wedge-and prism-shaped models comprised of the designed structures were simulated to validate the NRI behavior and were then compared to experimental results in the microwave regime. Furthermore, the Y-shaped design was fabricated in the THz regime and the co-and cross-polarized transmission coefficients were determined from experiments and were compared to numerical results.

Frequency stabilization of a single mode terahertz quantum cascade laser to the kilohertz level.

A simple analog locking circuit was shown to stabilize the beat signal between a 2.408 THz quantum cascade laser and a CH(2)DOH THz CO(2) optically pumped molecular laser to 3-4 kHz (FWHM). This is approximately a tenth of the observed long-term (t approximately sec) linewidth of the optically pumped laser showing that the feedback loop corrects for much of the mechanical and acoustic-induced frequency jitter of the gas laser. The achieved stability should be sufficient to enable the use of THz quantum cascade lasers as transmitters in short-range coherent transceivers.

Doping tunable resonance: Toward electrically tunable mid-infrared metamaterials

We demonstrate metamaterials at the mid-infrared (mid-IR) wavelengths (8–12 μm) that can be widely tuned by doping in adjacent semiconductor epilayers. The metamaterials are based on metallic split ring resonators (SRRs) fabricated on doped indium antimonide (InSb). Finite integral time-domain simulation results and measured transmission data show that the resonance blueshifts when the semiconductor electron carrier concentration is increased while keeping the split ring geometry constant. A resonant wavelength shift of 1.15 μm is achieved by varying the carrier concentration of underlying InSb epilayer from 1×1016 to 2×1018 cm−3. This work represents the first step toward active tunable metamaterials in the mid-IR where the resonance can be tuned in real time by applying an electric bias voltage to control the effective carrier density.

Voltage-controlled active mid-infrared plasmonic devices

We demonstrate active voltage-controlled spectral tuning of mid-infrared plasmonic structures. Extraordinary optical transmission gratings were fabricated on n-doped GaAs epilayers with a HfO2 gate dielectric between the grating and the doped semiconductor. The permittivity of the GaAs was tuned by depleting charge carriers below the top grating gate upon the application of a reverse bias to the gate. Devices were characterized both electrically and optically, and resonant transmission peak spectral and transmitted intensity shifts were achieved. Possible applications for, as well as the limitations of, the demonstrated technology are discussed.

Mid-infrared doping tunable transmission through subwavelength metal hole arrays on InSb

Doping-tunable mid-infrared extraordinary transmission is demonstrated from a periodic metal hole array patterned on n-InSb. The polarization-dependent transmission was measured at room temperature and 77 K. In addition, the extraordinary transmission was measured for incident angles from 0 degrees to 35 degrees in 5 degrees steps. A fundamental resonance shift of approximately 123 cm-1 (1.4 microm) is observed by varying the doping from 1 x 10(16) to 2 x 10(18) cm(-3). The calculated transmission resonances were in good agreement with the experimental results. This suggests that InSb semiconductor-based plasmonic structures may be suitable for a variety of tunable mid-infrared device applications.

2.32 THz quantum cascade laser frequency-locked to the harmonic of a microwave synthesizer source

Frequency stabilization of a THz quantum cascade laser (QCL) to the harmonic of a microwave source has been accomplished using a Schottky diode waveguide mixer designed for harmonic mixing. The 2.32 THz, 1.0 milliwatt CW QCL is coupled into the signal port of the mixer and a 110 GHz signal, derived from a harmonic of a microwave synthesizer, is coupled into the IF port. The difference frequency between the 21st harmonic of 110 GHz and the QCL is used in a discriminator to adjust the QCL bias current to stabilize the frequency. The short-term frequency jitter is reduced from 550 kHz to 4.5 kHz (FWHM) and the long-term frequency drift is eliminated. This performance is compared to that of several other THz QCL frequency stabilization techniques.