William P. King

Nanoscale Tunable Reduction of Graphene Oxide for Graphene Electronics

Writing Conductive Lines with Hot Tips The interface within devices between conductors, semiconductors, and insulators is usually created by stacking patterned layers of different materials. For flexible electronics, it can be advantageous to avoid this architectural constraint. Graphene oxide, formed by chemical exfoliation of graphite, can be reduced to a more conductive form using chemical reductants. Wei et al. (p. 1373) now show that layers of graphene oxide can also be reduced using a hot atomic force microscope tip to create materials comparable to those of organic conductors. This process can create patterned regions (down to 12 nanometers in width) that differ in conductivity by up to four orders of magnitude. Conducting regions can be drawn on graphene oxide sheets with a heated atomic force microscope tip. The reduced form of graphene oxide (GO) is an attractive alternative to graphene for producing large-scale flexible conductors and for creating devices that require an electronic gap. We report on a means to tune the topographical and electrical properties of reduced GO (rGO) with nanoscopic resolution by local thermal reduction of GO with a heated atomic force microscope tip. The rGO regions are up to four orders of magnitude more conductive than pristine GO. No sign of tip wear or sample tearing was observed. Variably conductive nanoribbons with dimensions down to 12 nanometers could be produced in oxidized epitaxial graphene films in a single step that is clean, rapid, and reliable.

Nanoscale thermal transport. II. 2003–2012

A diverse spectrum of technology drivers such as improved thermal barriers, higher efficiency thermoelectric energy conversion, phase-change memory, heat-assisted magnetic recording, thermal management of nanoscale electronics, and nanoparticles for thermal medical therapies are motivating studies of the applied physics of thermal transport at the nanoscale. This review emphasizes developments in experiment, theory, and computation in the past ten years and summarizes the present status of the field. Interfaces become increasingly important on small length scales. Research during the past decade has extended studies of interfaces between simple metals and inorganic crystals to interfaces with molecular materials and liquids with systematic control of interface chemistry and physics. At separations on the order of ∼1 nm, the science of radiative transport through nanoscale gaps overlaps with thermal conduction by the coupling of electronic and vibrational excitations across weakly bonded or rough interface...

High-power lithium ion microbatteries from interdigitated three-dimensional bicontinuous nanoporous electrodes

High-performance miniature power sources could enable new microelectronic systems. Here we report lithium ion microbatteries having power densities up to 7.4 mW cm(-2) μm(-1), which equals or exceeds that of the best supercapacitors, and which is 2,000 times higher than that of other microbatteries. Our key insight is that the battery microarchitecture can concurrently optimize ion and electron transport for high-power delivery, realized here as a three-dimensional bicontinuous interdigitated microelectrodes. The battery microarchitecture affords trade-offs between power and energy density that result in a high-performance power source, and which is scalable to larger areas.

Direct deposition of continuous metal nanostructures by thermal dip-pen nanolithography

We describe the deposition of continuous metal nanostructures onto glass and silicon using a heated atomic force microscope cantilever. Like a miniature soldering iron, the cantilever tip is coated with indium metal, which can be deposited onto a surface forming lines of a width less than 80 nm. Deposition is controlled using a heater integrated into the cantilever. When the cantilever is unheated, no metal is deposited from the tip, allowing the writing to be registered to existing features on the surface. We demonstrate direct-write circuit repair by writing an electrical connection between two metal electrodes separated by a submicron gap.

Electrical, Thermal, and Mechanical Characterization of Silicon Microcantilever Heaters

Silicon atomic force microscope (AFM) cantilevers having integrated solid-state heaters were originally developed for application to data storage, but have since been applied to metrology, thermophysical property measurements, and nanoscale manufacturing. These applications beyond data storage have strict requirements for mechanical characterization and precise temperature calibration of the cantilever. This paper describes detailed mechanical, electrical, and thermal characterization and calibration of AFM cantilevers having integrated solid-state heaters. Analysis of the cantilever response to electrical excitation in both time and frequency domains aids in resolving heat transfer mechanisms in the cantilever. Raman spectroscopy provides local temperature measurement along the cantilever with resolution near 1 mum and 5degC and also provides local surface stress measurements. Observation of the cantilever mechanical thermal noise spectrum at room temperature and while heated provides insight into cantilever mechanical behavior and compares well with finite-element analysis. The characterization and calibration methodology reported here expands the use of heated AFM cantilevers, particularly the uses for nanomanufacturing and sensing

Nanoscale Joule heating, Peltier cooling and current crowding at graphene–metal contacts

The performance and scaling of graphene-based electronics is limited by the quality of contacts between the graphene and metal electrodes. However, the nature of graphene-metal contacts remains incompletely understood. Here, we use atomic force microscopy to measure the temperature distributions at the contacts of working graphene transistors with a spatial resolution of ~ 10 nm (refs 5-8), allowing us to identify the presence of Joule heating, current crowding and thermoelectric heating and cooling. Comparison with simulation enables extraction of the contact resistivity (150-200 Ω µm²) and transfer length (0.2-0.5 µm) in our devices; these generally limit performance and must be minimized. Our data indicate that thermoelectric effects account for up to one-third of the contact temperature changes, and that current crowding accounts for most of the remainder. Modelling predicts that the role of current crowding will diminish and the role of thermoelectric effects will increase as contacts improve.

Atomic force microscope cantilevers for combined thermomechanical data writing and reading

Heat conduction governs the ultimate writing and reading capabilities of a thermomechanical data storage device. This work investigates transient heat conduction in a resistively heated atomic force microscope cantilever through measurement and simulation of cantilever thermal and electrical behavior. The time required to heat a single cantilever to bit-writing temperature is near 1 μs and the thermal data reading sensitivity ΔR/R is near 1×10−4 per vertical nm. Finite-difference thermal and electrical simulation results compare well with electrical measurements during writing and reading, indicating design tradeoffs in power requirements, data writing speed, and data reading sensitivity. We present a design for a proposed cantilever that is predicted to be faster and more sensitive than the present cantilever.

Impact of polymer film thickness and cavity size on polymer flow during embossing: toward process design rules for nanoimprint lithography

This paper presents continuum simulations of polymer flow during nanoimprint lithography (NIL). The simulations capture the underlying physics of polymer flow from the nanometer to millimeter length scale and examine geometry and thermophysical process quantities affecting cavity filling. Variations in embossing tool geometry and polymer film thickness during viscous flow distinguish different flow driving mechanisms. Three parameters can predict polymer deformation mode: cavity width to polymer thickness ratio, polymer supply ratio and capillary number. The ratio of cavity width to initial polymer film thickness determines vertically or laterally dominant deformation. The ratio of indenter width to residual film thickness measures polymer supply beneath the indenter which determines Stokes or squeeze flow. The local geometry ratios can predict a fill time based on laminar flow between plates, Stokes flow, or squeeze flow. A characteristic NIL capillary number based on geometry-dependent fill time distinguishes between capillary- or viscous-driven flows. The three parameters predict filling modes observed in published studies of NIL deformation over nanometer to millimeter length scales. The work seeks to establish process design rules for NIL and to provide tools for the rational design of NIL master templates, resist polymers and process parameters.

Shape recovery of nanoscale imprints in a thermoset "shape memory" polymer

This letter reports temperature-dependent recovery of atomic force microscope tip-formed indentations in a thermoset shape memory polymer. The indentations are made at both room temperature and 69°C, and then recovered at temperatures between 40°C and 70°C. The shape recovery is more complete for higher anneal temperatures, and is relatively independent of time for 102–104s. The experiments show shape memory in the 1–100nm size scale.

Design of atomic force microscope cantilevers for combined thermomechanical writing and thermal reading in array operation

In thermomechanical data writing, a resistively-heated atomic force microscope (AFM) cantilever tip forms indentations in a thin polymer film. The same cantilever operates as a thermal proximity sensor to detect the presence of previously written data bits. This paper uses recent progress in thermal analysis of the writing and reading modes to develop new cantilever designs for increased speed, sensitivity, and reduced power consumption in both writing and reading operation. Measurements of cantilever electrical resistance during heating reveals physical limits of cantilever writing and reading, and verifies a finite-difference thermal and electrical simulation of cantilever operation. This work proposes two new cantilever designs that correspond to fabrication technology benchmarks. Simulations predict that the proposed cantilevers have a higher data rate and are more sensitive than the present cantilever. The various cantilever designs offer single-bit writing times of 0.2 /spl mu/s-25 /spl mu/s for driving voltages of 2-25 V. The thermal reading /spl Delta/R/R sensitivity is as high as 4/spl times/10/sup -4/ per vertical nm in near steady-state operation.