Winfried Bakalski

Lumped and distributed lattice-type LC-baluns

This paper presents two balun circuits derived from the lumped Lattice-type LC-balun. First the lumped LC-balun bridge elements are substituted by microstrip lines. This results in an improved performance at the 2nd and 3rd harmonic frequency for RF power amplifier output baluns. Secondly, the lumped Lattice-type LC-balun is extended to a dual band balun. Independent impedance transformation and balun conversion can be done at two different frequencies. The design equations are derived.

A fully integrated 5.3-GHz 2.4-V 0.3-W SiGe bipolar power amplifier with 50-/spl Omega/ output

A radio frequency power amplifier for 4.8-5.7 GHz has been realized in a 0.35-/spl mu/m SiGe bipolar technology. The balanced two-stage push-pull power amplifier uses two on-chip transformers as input-balun and for interstage matching. Further, it uses three coils for the integrated LC-output balun and the RF choke. Thus, the power amplifier does not require any external components. At 1.0-V, 1.5-V, and 2.4-V supply voltages, output powers of 17.7 dBm, 21.6 dBm, and 25 dBm are achieved at 5.3 GHz. The respective power-added efficiencies (PAE) are 15%, 22%, and 24%. The small-signal gain is 26 dB. The output 1-dB compression point at 2.4 V is 22 dBm with a PAE of 14%.

17-GHz 50-60 mW power amplifiers in 0.13-/spl mu/m standard CMOS

Two versions of power amplifiers with different output matching approaches for the 17-GHz band were realized in 0.13-mum standard digital CMOS technology with 1.5-V supply voltage. The power amplifier with an external matching network delivers 17.8-dBm saturated output power with 15.6% power added efficiency (PAE). The small-signal gain is 11.5 dB. The fully integrated power amplifier delivers 17.1-dBm saturated output power with 9.3% PAE. The small-signal gain is 14.5 dB. No external radio frequency components are required

A fully integrated 4.8-6 GHz power amplifier with on-chip output balun in 38 GHz-f/sub T/ Si-bipolar

A fully integrated radio frequency power amplifier for 4.8-6 GHz has been realized in a 38 GHz-f/sub T/, 0.25 /spl mu/m-Si-BiCMOS technology. The balanced 2-stage push-pull power amplifier uses two on-chip transformers as input balun and for interstage matching and an LC-type output balun with planar inductors. With this output network no external elements are required. At 1.2 V, 1.5 V, 2 V supply voltages output powers of 17 dBm, 18.9 dBm, 20.7 dBm are achieved at 5.8 GHz. The small-signal gain is 23 dB.

A 5.25 GHz SiGe bipolar power amplifier for IEEE 802.11a wireless LAN

An integrated wireless LAN radio frequency power amplifier (PA) for 5.25 GHz has been realized in a 40 GHz-f/sub T/, 0.35 /spl mu/m-SiGe-bipolar technology. The single-ended 3-stage power amplifier uses on-chip inductors and a short on-chip stripline for the interstage matching. At 3.3 V supply voltage the OP1dB is 23.8 dBm, and a saturated output power of 25.9 dBm is achieved at 5.25 GHz. The PAE at the OP1dB is 24%. The small-signal gain is 27 dB.

A load-insensitive quad-band GSM/EDGE SiGeC-bipolar power amplifier with a highly efficient low power mode

A load-insensitive fully-integrated quad- band GSM/EDGE radio frequency power amplifier for 824-915 MHz and 1710-1910 MHz has been realized in a 0.35-mum SiGeC-Bipolar technology. The chip integrates a low- and high-band 3-stage power amplifier including a bias-control circuit for power control, band select and mode as well as ramping dependent quiescent currents. The load-insensitive balanced PA architecture delivers for an adjusted output power of 34.5 dBm for all phases of a 3:1 VSWR a low deviation only 1.3 dB. At 3.5 V a saturated output power of 36.7 dBm is achieved at 870 MHz and 34 dBm at 1710 MHz. The respective peak PAE is 52% for low band and 42 % for high-band. The PA features a unique switched low power mode that involves disabling one half of each PA.

Outphasing Power Amplifier Design Investigations for 2.5G and 3G Standards

This paper presents investigations on outphasing power amplifier realizations based on a 2-stage 0.35 mum SiGe-bipolar PA design for 850 MHz and 1800 MHz. A Chireix combiner, a 90deg hybrid coupler and a Wilkinson power combiner were designed and all types were characterized in terms of efficiency and linearity for the usage in mobile phone applications.

A 4.8-6 GHz IEEE 802.11 a WLAN SiGe-bipolar power amplifier with on-chip output matching

A fully integrated 4.8-6 GHz wireless LAN SiGe-bipolar power amplifier chip requiring no external components was realized using the small die size of only 1/spl times/0.9 mm/sup 2/. At 1 V to 2.4 V, the maximum output power level is 19 dBm (22 % PAE) to 26.3 dBm (28.5% PAE) at 5.25 GHz with a maximum small signal gain of 33 dB. The maximum average output power for a maximum 3% error vector magnitude (EVM) is 16 dBm. The PA survives a VSWR of 50.

A fully integrated 5.3 GHz, 2.4V, 0.3 W SiGe-bipolar power amplifier with 50/spl Omega/ output

A radio frequency power amplifier for 4.8-5.7 GHz has been realized in a 0.25 /spl mu/m SiGe-bipolar technology. The balanced 2-stage push pull power amplifier uses two on chip transformers as input-balun and for interstage matching. Further it uses three coils for the integrated LC-output balun and the rf-choke. Thus the power amplifier is free of any external components. At 1.0V, 1.5V, 2.4V supply voltages output powers of 17.7 dBm, 21.6 dBm, 25dBm are achieved at 5.3 GHz. The respective power added efficiency is 15.6%, 22.4%, 24%. The small-signal gain is 26dB.

A fully integrated Bulk-CMOS switch based tunable transformer for RF and antenna matching

A fully integrated tunable RF impedance matching network based on a transformer topology and on-chip RF switches is presented. Using the Infincon 130nm Bulk-CMOS RF switch process with 2.4 μm alumina top metal, the chip integrates a 4-bit digitally tunable capacitor, a planar transformer with 4 independent windings and 12 taps, an on-chip charge pump and RF switches to control the operating mode of capacitor and the transformer. The circuit offers the possibility to cover the Smith Chart at either low and high impedance up to a VSWR of 10 on the GSM band 790-960 MHz. In by-pass mode the insertion loss is 0.8 dB at 850MHz and features a harmonic generation of - 85 dBc (H2) and -75 dBc (H3) without the need of any external devices or extra controller. The current consumption at 1.5V is 120μA.