Wu Yan-Hua

Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy

The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density—voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15 V 0.6 V), the space charge limited effect becomes the main transport mechanism. The current—voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm2, respectively.

Cardiac electrical activity imaging of patients with CRBBB or CLBBB in magnetocardiography

A new method for the imaging of cardiac electrical activity in patients with complete right bundle branch block (CRBBB) or complete left bundle branch block (CLBBB) is investigated using magnetocardiographic recordings of the surface of the body. This is based on the assumption that an equivalent single-current dipole moves along the unblocked bundle branch, whose position in the measurement plane is expressed in terms of the maximum and minimum, as well as the maximum gradient value of the measured magnetic field. The trajectory of the moving dipole on the measurement plane is indicative of the excitation conduction of the CRBBB or CLBBB subject during ventricular depolarization and repolarization, which is deduced by comparing each change between the dipole moment and the maximum current density in a corresponding pseudo-current density map. In summary, this method can distinguish CRBBB from CLBBB subjects by means of the dipole depth and two dipole moment components. The possibility of visualizing the excitation conduction in a CRBBB or CLBBB subject during ventricular depolarization and repolarization is then discussed.

A mode-locked external-cavity quantum-dot laser with a variable repetition rate

A mode-locked external-cavity laser emitting at 1.17-μm wavelength using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. By changing the external-cavity length, repetition rates of 854, 912, and 969 MHz are achieved respectively. The narrowest −3-dB radio-frequency linewidth obtained is 38 kHz, indicating that the laser is under stable mode-locking operation.

A grating-coupled external cavity InAs/InP quantum dot laser with 85-nm tuning range

The optical performance of a grating-coupled external cavity laser based on InAs/InP quantum dots is investigated. Continuous tuning from 1391 nm to 1468 nm is realized at an injection current of 1900 mA. With the injection current increasing to 2300 mA, the tuning is blue shifted to some extent to the range from 1383 nm to 1461 nm. By combining the effect of the injection current with the grating tuning, the total tuning bandwidth of the external cavity quantum-dot laser can reach up to 85 nm. The dependence of the threshold current on the tuning wavelength is also presented.

Active multi-mode-interferometer broadband superluminescent diodes

We report a new quantum dot superluminescent diode with a new device structure. In this device, a multi-mode-interferometer configuration and a J-bend structure were monolithically integrated. Owing to the multi-mode-interferometer structure, the superluminescent diode exhibits 60% increase in output power and 43% reduction in the differential resistance compared with the uniform waveguide width superluminescent diode fabricated from the same wafer. Our device produces an emission spectrum as wide as 103.7 nm with an output power of 2.5 mW at 600 mA continue-wave injection current. This broadband emission spectrum makes the axial resolution of the optical coherence tomography system employing the superluminescent diode to 6 μm in theory, which is high enough for most tissue imaging.

Broadband and high-speed swept external-cavity laser using a quantum-dot superluminescent diode as gain device

A wide wavelength tuning range swept external-cavity laser using an InAs/GaAs quantum-dot superluminescent diode as a gain device is demonstrated. The tunable filter consists of a polygon scanner and a grating in Littrow telescope-less configuration. The swept laser generates greater than 54-mW peak output power and up to 33-kHz sweep rate with a sweep range of 150 nm centered at 1155 nm. The effects of injection current and sweep rate on the sweep performance of the swept laser are studied.

Wavelength-tunable prism-coupled external cavity passively mode-locked quantum-dot laser*

A wavelength-tunable mode-locked quantum dot laser using an InAs/GaAs quantum-dot gain medium and a discrete semiconductor saturable absorber mirror is demonstrated. A dispersion prism, which has lower optical loss and less spectral narrowing than a blazed grating, is used for wavelength selection and tuning. A wavelength tuning range of 45.5 nm (from 1137.3 nm to 1182.8 nm) under 140-mA injection current in the passive mode-locked regime is achieved. The maximum average power of 19 mW is obtained at the 1170.3-nm wavelength, corresponding to the single pulse energy of 36.5 pJ.