Xiaodan Wang
Chinese Academy of Sciences
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Publication
Featured researches published by Xiaodan Wang.
Journal of Crystal Growth | 2001
Lianhe Li; Z. Pan; W. Zhang; Y. W. Lin; Xiaodan Wang; R. H. Wu; W.K. Ge
The effect of ion-induced damage on GaNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy employing a DC plasma as the N source was investigated. Ion-induced damage results in: (i) an observed disappearance of pendellosung fringes in the X-ray diffraction pattern of the sample; (ii) a drastic decrease in intensity and a broadening in the full-width at half-maximum of photoluminescence spectra. It was shown that ion-induced damage strongly affected the bandedge potential fluctuations of the QWs. The bandedge potential fluctuations for the samples grown with and without ion removal magnets (IRMs) are 44 and 63 meV, respectively. It was found that the N-As atomic interdiffusion at the interfaces of the QWs was enhanced by the ion damage-induced defects. The estimated activation energies of the N-As atomic interdiffusion for the samples grown with and without IRMs are 3.34 and 1.78 eV, respectively
Journal of Crystal Growth | 2001
Lianhe Li; Z. Pan; W. Zhang; Y. W. Lin; Xiaodan Wang; R. H. Wu
The optimum growth condition of GaInNAs/GaAs quantum wells (QWs) by plasma-assisted molecular beam epitaxy was investigated. High-resolution X-ray diffraction and photoluminescence (PL) measurements showed that ion damage drastically degraded the quality of GaNAs and GaInNAs QWs and that ion removal magnets can effectively remove the excess ion damage. Remarkable improvement of PL intensity and obvious appearance of pendellosung fringes were observed by removing the N ions produced in the plasma cell. When the growth rate increased from 0.73 to 1.2 ML/s, the optimum growth temperature was raised from 460 degreesC to 480 degreesC and PL peak intensity increased two times. Although the N composition decreased with increasing growth rate, degradation of optical properties of GaInNAs QWs was observed when the growth rate was over 0.92 ML/s. Due to low-temperature growth of GaInNAs QWs, a distinctive reflection high-energy electron diffraction pattern was observed only when the GaAs barrier was grown under lower As-4 pressure. The samples with GaAs barriers grown under lower As-4 pressure (V/III ratio about 24) exhibited seven times increase in PL peak intensity compared with those grown under higher As-4 pressure (V/III ratio about 50)
Chinese Optics Letters | 2008
Xiao Hu; Juan Song; Qinling Zhou; L. T. Yang; Xiaodan Wang; Congshan Zhu; Jianrong Qiu
The femtosecond laser induced void array inside Al2O3 crystals was discussed. The void array was formed spontaneously under the irradiation of a single beam of infrared femtosecond laser which was focused at a fixed point inside the Al2O3 crystal sample. It was found that the regular voids only could be fabricated near the sample surface, which was different from the situation in CaF2 single crystal reported before. The possible mechanism of the phenomena was also discussed.
Journal of Crystal Growth | 2005
Benxue Jiang; Zhiwei Zhao; Xiaodong Xu; Pingxin Song; Xiaodan Wang; Jun Xu; Peizhen Deng
Journal of Crystal Growth | 2008
Xiaodong Xu; Guangjun Zhao; Feng Wu; Wenwei Xu; Yanhua Zong; Xiaodan Wang; Zhiwei Zhao; Guoqing Zhou; Jun Xu
Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy | 2006
Xiaodan Wang; Xiaodong Xu; Xionghui Zeng; Zhiwei Zhao; Benxue Jiang; Xiaoming He; Jun Xu
Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy | 2008
Xionghui Zeng; Xiaodong Xu; Xiaodan Wang; Zhiwei Zhao; Guangjun Zhao; Jun Xu
Journal of Alloys and Compounds | 2008
Xiaodong Xu; Feng Wu; Wenwei Xu; Yanhua Zong; Xiaodan Wang; Zhiwei Zhao; Guoqing Zhou; Jun Xu
Optical Materials | 2007
Xiaodan Wang; Xiaodong Xu; Zhiwei Zhao; Benxue Jiang; Jun Xu; Guangjun Zhao; Peizhen Deng; Gilbert L. Bourdet; J.-C. Chanteloup
Optical Materials | 2007
Benxue Jiang; Zhiwei Zhao; Xiaodong Xu; Pingxin Song; Xiaodan Wang; Jun Xu; Peizhen Deng