Xiaoyuan Zhan

Enhanced Optoelectronic Performance on the (110) Lattice Plane of an MAPbBr3 Single Crystal

Hybrid organic-inorganic lead halide perovskites have attracted significant attention due to their impressive optoelectronic properties. MAPbX3 (MA= CH3NH3+, X= Cl, Br or I), the most popular member of this family, has been recognized as an important next-generation optoelectronic materials contender, and remarkable progress has been achieved in both thin films and single crystals. However, the lack of optimizations in energy harvest, transportation, carrier extraction, and process compatibility is hindering their future development. In this study, a triangle prism MAPbBr3 single crystal exposing (100) and (110) crystallographic planes was successfully synthesized, and the optoelectronic performances of these two lattice planes were systematically explored by employing a planar metal-semiconductor-metal (MSM) device. Compared to the device fabricated on the (100) plane, a 153.33% enhancement of responsivity was achieved under 10 μW irradiation and 10 V bias on the (110) plane. Finally, possible mechanism for such an enhancement was discussed based on the different defect migration behaviors of (100) and (110) planes.

Design Growth of MAPbI3 Single Crystal with (220) Facets Exposed and Its Superior Optoelectronic Properties

MAPbI3 is deemed as the most prominent member in hybrid perovskites family because of its extremely optoelectronic properties. However, some issues and puzzles are still in expectation of their answers, such as stabilities, hysteresis, ferroelectricity, and so on. To bridge the distinctions between MAPbI3 single crystal and thin films, large-size single crystals are demanded. On the contrary, crystal structure anisotropy-dependent optoelectronic properties is an inevitable topic. A series of large-size MAPbI3 single crystals with (220) facets exposed were successfully grown, using high concentration solutions and large-size seed crystals to match growth rates of (100) and (220) facets. The optoelectronic properties of photocurrents, responsivity, EQE, and detectivity clearly showed significant anisotropy of optoelectronic properties in MAPbI3 single crystal. According to ion migration theory, the anisotropy of optoelectronic properties was interpreted. We hope this result will be helpful to guide oriented growth MAPbI3 thin films.

Incorporation of Cesium Ions into MA1–xCsxPbI3 Single Crystals: Crystal Growth, Enhancement of Stability, and Optoelectronic Properties

Organic-inorganic hybrid methylammonium lead iodide perovskite (MAPbI3) has attracted extensive attention in a series of optoelectronic devices. The photoelectric properties of the MAPbI3 single crystal have been revealed to be much better than those of it polycrystalline counterparts. However, its poor moisture and heat resistance severely limited further development. The introduction of Cs+ into polycrystalline films has shown to be an effective way to enhance its moisture resistance through a passivation effect. However, the entrance abilities of Cs+ into a MAPbI3 crystal lattice and the influence on photoelectric properties of a single crystal were not clear until now. Therefore, we attempted to grow large MA1- xCs xPbI3 single crystals to introduce Cs+ into the crystal lattice. The existence of Cs+ brought lattice shrinkage and enhanced stability of the MAPbI3 single crystal. A moderate quantity of Cs+ (2%) proved to heighten the photoelectric properties, whereas an excess quantity of Cs+ (5%) brought more shallow defects, which ultimately deteriorated the photoelectric properties.