Xing-Rong Zhao

Microlens arrays formed by melting photoresist and ion beam milling

Microlens array design and fabrication on silicon and quartz substrates for infrared focal plane applications have been described. A 128 X 128 element silicon microlens array with a pixel size of 60 X 45 micrometers for 3 - 5 micron bandwidth was designed using ray tracing and computer simulation program. A photoresist shap with rectangular arch was prepared by milting process and the shap was transferred onto a silicon substrate using ion beam milling. A 2 X 20 element quartz microlens array has also been fabricated using the same method as the manufacture of silicon microlens array. The microlens array structures were characterized by both the scanning electron microscope and the surface stylus. The experimental results show that the microlens arrays can be effectively formed at the temperature of less than 150 degree(s)C. The use of the microlenses to improve the performance of IR detector arrays is described. A photocurrent gain in excess of 2 has been achieved.

Linear High-Tc YBa2Cu3O7−δ Superconducting Thin Film Infrared Detectors Coupled with a Cylindrical Microlens Array in Quartz Glass Substrate

AbstractMonolithic linear cylindrical microlens array in a quartz glass substrate is fabricated using photolithography and ion beam etching technique, the high-Tc YBa2Cu3O7−δ superconducting thin films are deposited through excimer laser scanning ablation, the superconducting thin films are patterned by photolithographic method and ion beam etching technique, and the hybrid structure of the microlens array component and the superconducting IR detectors has been obtained using an IR glue to cement the microlens component onto the superconducting device. We also investigate the optical response characteristics of the hybrid device in the optical spectral region of 1 ~ 5 μm, as follows. The average optical responsivity

High Tc superconducting microbolometer detector arrays

(\overline R )

128x128-element silicon microlens array fabricated by ion-beam etching for PtSi IRCCD

of the hybrid device is 1.6×104 V/W, average noise equivalent power

The Bi/Bi1-xSbx multiquantum well structure

(\overline {NEP} \;)

In situ growth of YBaCuO films by ion beam sputtering

is 2.3×10−12 WHz−1/2, average detectvity