Y. Anahory

Synthesis and Characterization of Single-Layer Silver—Decanethiolate Lamellar Crystals

We report the synthesis of silver-decanethiolate (AgSC10) lamellar crystals. Nanometer-sized Ag clusters grown on inert substrates react with decanethiol vapor to form multilayer AgSC10 lamellar crystals with both layer-by-layer and in-plane ordering. The crystals have strong (010) texture with the layers parallel to the substrates. The synthesis method allows for a precise control of the number of layers. The thickness of the lamellae can be manipulated and systematically reduced to a single layer by decreasing the amount of Ag and lowering the annealing temperature. The single-layer AgSC10 lamellae are two-dimensional crystals and have uniform thickness and in-plane ordering. These samples were characterized with nanocalorimetry, atomic force microscopy (AFM), transmission electron microscopy (TEM), X-ray diffraction (XRD), X-ray reflectivity (XRR), Fourier transform infrared spectroscopy (FTIR), and Rutherford backscattering spectroscopy (RBS).

Formation of Pd2Si on single-crystalline Si (100) at ultrafast heating rates: An in-situ analysis by nanocalorimetry

The kinetics of intermediate phase formation between ultrathin films of Pd (12 nm) and single-crystalline Si (100) is monitored by in-situ nanocalorimetry at ultrafast heating rates. The heat capacity curves show an exothermic peak related to the formation of Pd2Si. A kinetic model which goes beyond the conventional linear-parabolic growth to consider independent nucleation and lateral growth of Pd2Si along the interface and vertical growth mechanisms is developed to fit the calorimetric curves. The model is used to extract the effective interfacial nucleation/growth and diffusion coefficients at the unusually high temperatures of silicide formation achieved at very fast heating rates.

Concentration and ion-energy-independent annealing kinetics during ion-implanted-defect annealing

Nanocalorimetry revealed that the annealing kinetics of ion-implanted defects in polycrystalline Si is independent of ion fluence and implantation energy. Ion implantation of 30 keV Si−, 15 keV Si−, and 15 keV C− was performed at fluences ranging from 6×1011 to 1×1015atoms∕cm2, followed by temperature scans between 30 and 450 °C. The rate of heat release has the same shape for all fluences, featuring no peaks but rather a smooth, continuously increasing signal. This suggests that the heat release is dominated by the annealing of highly disordered zones generated by each implantation cascade. Such annealing depends primarily on the details of the damage zone–crystal interface kinetics, and not on the point defect concentration.