Y. Hu

First Direct Observation of a Nearly Ideal Graphene Band Structure

Angle-resolved photoemission and x-ray diffraction experiments show that multilayer epitaxial graphene grown on the SiC(0001) surface is a new form of carbon that is composed of effectively isolated graphene sheets. The unique rotational stacking of these films causes adjacent graphene layers to electronically decouple leading to a set of nearly independent linearly dispersing bands (Dirac cones) at the graphene K point. Each cone corresponds to an individual macroscale graphene sheet in a multilayer stack where AB-stacked sheets can be considered as low density faults.

Film Structure of Epitaxial Graphene Oxide on SiC: Insight on the Relationship between Interlayer Spacing, Water Content, and Intralayer Structure

Chemical oxidation of multilayer graphene grown on silicon carbide yields films exhibiting reproducible characteristics, lateral uniformity, smoothness over large areas, and manageable chemical complexity, thereby opening opportunities to accelerate both fundamental understanding and technological applications of this form of graphene oxide films. Here, we investigate the vertical inter-layer structure of these ultra-thin oxide films. X-ray diffraction, atomic force microscopy, and IR experiments show that the multilayer films exhibit excellent inter-layer registry, little amount (<10%) of intercalated water, and unexpectedly large interlayer separations of about 9.35 A. Density functional theory calculations show that the apparent contradiction of “little water but large interlayer spacing in the graphene oxide films” can be explained by considering a multilayer film formed by carbon layers presenting, at the nanoscale, a non-homogenous oxidation, where non-oxidized and highly oxidized nano-domains coexist and where a few water molecules trapped between oxidized regions of the stacked layers are sufficient to account for the observed large inter-layer separations. This work sheds light on both the vertical and intra-layer structure of graphene oxide films grown on silicon carbide, and more in general, it provides novel insight on the relationship between inter-layer spacing, water content, and structure of graphene/graphite oxide materials.

A method to extract pure Raman spectrum of epitaxial graphene on SiC

The Raman spectrum of epitaxial graphene on SiC is generally obtained by simply subtracting a SiC spectra from the experimental data, which results in noisy spectrum and negative intensity. By using a Non-negative Matrix Factorization (NMF) method, we obtain pure graphene spectra, even for monolayer graphene and sub-micron size patterned features, as well as in spatial mapping and depth profile. We show that the NMF method is efficient in data smoothing and for signal deconvolution with no assumption required for the functional form of the signals.

Chapter 6: Epitaxial Graphene on SiC: 2D Sheets, Selective Growth, and Nanoribbons

Epitaxial graphene grown on SiC by the confinement controlled sublimation method is reviewed, with an emphasis on multilayer and monolayer epitaxial graphene on the carbon face of 4H-SiC and on directed and selectively grown structures under growth-arresting or growth-enhancing masks. Recent developments in the growth of templated graphene nanostructures are also presented, as exemplified by tens of micron long very well confined and isolated 20-40nm wide graphene ribbons. Scheme for large scale integration of ribbon arrays with Si wafer is also presented.