Yasunori Ohno

Large-Area Doping Process for Fabrication of poly-Si Thin Film Transistors Using Bucket Ion Source and XeCl Excimer Laser Annealing

A large-area doping process for polycrystalline Si (poly-Si) thin-film transistor addressed liquid crystal displays (TFT/LCDs) has been developed. A large ion beam that was extracted from the bucket ion source and a XeCl excimer laser were utilized for impurity doping and impurity activation. A sufficiently low value of sheet resistance (500±25 Ω/\Box) was obtained for an implantation time of 10 s. The poly-Si TFTs fabricated by using this technique have good characteristics and uniformity. This technique seems suitable for the fabrication of large area poly-Si TFT/LCDs.

Large-Area Doping for Poly-Si Thin Film Transistors Using Bucket Ion Source with an RF Plasma Cathode

In order to realize stable processing of large-area ion doping, a filament-less bucket ion source with an rf plasma cathode (RFC) was studied and applied to the fabrication of poly crystalline Si thin film transistors (poly-Si TFTs). By using Ar as a discharge gas, the RFC can be utilized for the bucket ion source instead of a hot filament cathode (HFC). The throughput, uniformity of the sheet resistance and the characteristics of the fabricated TFTs were equivalent to those of a hot filament cathode type ion source. This technique seems applicable to the doping process of poly-Si TFTs.

Large Area Doping Process for Fabrication of p-Si TFT's Using Bucket Ion Source and XeCl Excimer Laser Annealing

A large area doping process for poly-crystalline Si (p-Si) TFT/LCD,s has been developed. A large ion beam (150nm C ) extracted fron the bucket ion source and a XeCI exciner laser uere utilized for inpurity doping and activation annnealing. A sufficiently low value of sheet resistance (5OO +25 0 / n ) rdas obtained for an irnplantation tine of 10s. The p-Si TFT,s fabricated by using this technique have good characteristics and uniformity. This technique seens suitable for fabrication of large area p-Si TFT/LCDs.