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Featured researches published by Yasuo Nakajima.


Laser Diode Technology and Applications IV | 1992

Wavelength tunable 4-element laser array

Toshiyuki Ohishi; Hitoshi Watanabe; Masao Kawano; Akira Takemoto; Yasuo Nakajima; Etsuji Omura; Masao Aiga; Kenji Ikeda

A wavelength tunable 4-element laser array is fabricated with high performances suitable for the frequency division multiplexing (FDM) system. The array consists of four 1 .55 j.m DFB(distributed feedback) PPIBH (p-substrate partially inverted buried heterostructure) lasers with beam spacing of 125 jim. The lasing wavelength is tuned by changing the ratio of input currents to the two electrodes. The lasing frequency of the array can be allocated with a frequency interval of 10 GHz. An FM efficiency as large as 1 GHz/mA and a flat FM response with variation less than 3 dB in the modulation frequency range from 20 kHz to 1 GHz have been realized. An electrical crosstalk is less than -30 dB up to 800 MHz.


Optical Data Storage '91 | 1991

Interchangeability of optical disks

Masayoshi Shimamoto; Kouichi Yamada; Isao Watanabe; Yasuo Nakajima; Osamu Ito; Kunimaro Tanaka

The aim of this study is to improve interchangeability to ISO standard optical disks. The compensation of the write condition and the expansion of dynamic range of servo circuits using control track data have been tried. The results were satisfactory.


Laser Diode Technology and Applications VI | 1994

High-power and highly reliable operation of all-MOCVD-grown 1.48-um diode lasers

Tadashi Nishimura; Yasuo Nakajima; T. Kimura; Yoshihiro Kokubo; K. Isshiki; Etsuji Omura; Masao Aiga; Kenji Ikeda

High output power and long-term stable operation have been realized in all-MOCVD grown 1.48 micrometers buried heterostructure lasers. For the purpose of high power operation, a diode with a cavity length of 1800 micrometers was mounted junction down. This diode shows the maximum output power of 310 mW at 25 degree(s)C, cw. A preliminary aging test is being carried on at a temperature of 50 degree(s)C with a constant light output of 100 mW for the diodes with cavity length of 900 micrometers and junction up configuration. Long-term stable operation over 3000 hrs and the estimated MTTF of 2.4 X 105 hrs at 50 degree(s)C, 100 mW have been realized. As another advantage of the all-MOCVD process, the uniformity of the laser characteristics is also demonstrated. Lasers with a cavity length of 900 micrometers in junction-up configuration are assembled from a processed 2-inch wafer.


Electronics Letters | 1987

1.3μm InGaAsP/InP distributed-feedback P-substrate partially inverted buried-heterostructure laser diode

A. Takemoto; Y. Sakakibara; Yasuo Nakajima; M. Fujiwara; S. Kakimoto; H. Namizaki; W. Susaki


Journal of Lightwave Technology | 1987

High-power high-reliability operation of 1.3 µm p-substrate buried crescent laser diodes

Yasuo Nakajima; H. Higuchi; Y. Kokubo; Y. Sakakibara; Syoichi Kakimoto; H. Namizaki


The Review of Laser Engineering | 1985

Leakage Current in p-Substrate 1.3μm InGaAsP/InP

Hideyo Higuchi; Yasuo Nakajima; Y. Sakakibara; E. Oomura; H. Namizaki; Kenji Ikeda; W. Susaki


Archive | 2013

BACK-SURFACE-INCIDENCE-TYPE SEMICONDUCTOR LIGHT RECEIVING ELEMENT

Hitoshi Tada; Yasuo Nakajima; Yasuhiro Kunitsugu


Archive | 2013

Semiconductor light detecting element with grooved substrate

Hitoshi Tada; Yasuo Nakajima; Yasuhiro Kunitsugu


Archive | 2008

Semiconductor photodetector and manufacturing method therefor

Matobu Kikuchi; Yasuo Nakajima; Yoshiyuki Nakashima; Hitoshi Sakuma


Microwave and Optical Technology Letters | 1994

Extremely low power penalty in 2.5‐Gb/S transmission experiment using 1.55‐μm MQW‐DFB lasers with optimized QW number

M. Kawano; Toshitaka Aoyagi; Hitoshi Watanabe; Tohru Takiguchi; Yasuo Nakajima; Akira Takemoto; R. Hirano

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