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Featured researches published by Yat Li.


Materials Today | 2006

Nanowire electronic and optoelectronic devices

Yat Li; Fang Qian; Jie Xiang; Charles M. Lieber

Electronic and optoelectronic devices impact many areas of society, from simple household appliances and multimedia systems to communications, computing, and medical instruments. Given the demand for ever more compact and powerful systems, there is growing interest in the development of nanoscale devices that could enable new functions and/or greatly enhanced performance. Semiconductor nanowires are emerging as a powerful class of materials that, through controlled growth and organization, are opening up substantial opportunities for novel nanoscale photonic and electronic devices. We review the broad array of nanowire building blocks available to researchers and discuss a range of electronic and optoelectronic nanodevices, as well as integrated device arrays, that could enable diverse and exciting applications in the future.


Nano Letters | 2012

Hydrogenated TiO2 nanotube arrays for supercapacitors.

Xihong Lu; Gongming Wang; Teng Zhai; Minghao Yu; Jiayong Gan; Yexiang Tong; Yat Li

We report a new and general strategy for improving the capacitive properties of TiO(2) materials for supercapacitors, involving the synthesis of hydrogenated TiO(2) nanotube arrays (NTAs). The hydrogenated TiO(2) (denoted as H-TiO(2)) were obtained by calcination of anodized TiO(2) NTAs in hydrogen atmosphere in a range of temperatures between 300 to 600 °C. The H-TiO(2) NTAs prepared at 400 °C yields the largest specific capacitance of 3.24 mF cm(-2) at a scan rate of 100 mV s(-1), which is 40 times higher than the capacitance obtained from air-annealed TiO(2) NTAs at the same conditions. Importantly, H-TiO(2) NTAs also show remarkable rate capability with 68% areal capacitance retained when the scan rate increase from 10 to 1000 mV s(-1), as well as outstanding long-term cycling stability with only 3.1% reduction of initial specific capacitance after 10,000 cycles. The prominent electrochemical capacitive properties of H-TiO(2) are attributed to the enhanced carrier density and increased density of hydroxyl group on TiO(2) surface, as a result of hydrogenation. Furthermore, we demonstrate that H-TiO(2) NTAs is a good scaffold to support MnO(2) nanoparticles. The capacitor electrodes made by electrochemical deposition of MnO(2) nanoparticles on H-TiO(2) NTAs achieve a remarkable specific capacitance of 912 F g(-1) at a scan rate of 10 mV s(-1) (based on the mass of MnO(2)). The ability to improve the capacitive properties of TiO(2) electrode materials should open up new opportunities for high-performance supercapacitors.


Nano Letters | 2009

Nitrogen-Doped ZnO Nanowire Arrays for Photoelectrochemical Water Splitting

Xunyu Yang; Abraham Wolcott; Gongming Wang; Alissa Sobo; Robert Carl Fitzmorris; Fang Qian; Jin Z. Zhang; Yat Li

We report the rational synthesis of nitrogen-doped zinc oxide (ZnO:N) nanowire arrays, and their implementation as photoanodes in photoelectrochemical (PEC) cells for hydrogen generation from water splitting. Dense and vertically aligned ZnO nanowires were first prepared from a hydrothermal method, followed by annealing in ammonia to incorporate N as a dopant. Nanowires with a controlled N concentration (atomic ratio of N to Zn) up to approximately 4% were prepared by varying the annealing time. X-ray photoelectron spectroscopy studies confirm N substitution at O sites in ZnO nanowires up to approximately 4%. Incident-photon-to-current-efficiency measurements carried out on PEC cell with ZnO:N nanowire arrays as photoanodes demonstrate a significant increase of photoresponse in the visible region compared to undoped ZnO nanowires prepared at similar conditions. Mott-Schottky measurements on a representative 3.7% ZnO:N sample give a flat-band potential of -0.58 V, a carrier density of approximately 4.6 x 10(18) cm(-3), and a space-charge layer of approximately 22 nm. Upon illumination at a power density of 100 mW/cm(2) (AM 1.5), water splitting is observed in both ZnO and ZnO:N nanowires. In comparison to ZnO nanowires without N-doping, ZnO:N nanowires show an order of magnitude increase in photocurrent density with photo-to-hydrogen conversion efficiency of 0.15% at an applied potential of +0.5 V (versus Ag/AgCl). These results suggest substantial potential of metal oxide nanowire arrays with controlled doping in PEC water splitting applications.


Advanced Materials | 2013

H-TiO2@MnO2//H-TiO2@C Core–Shell Nanowires for High Performance and Flexible Asymmetric Supercapacitors

Xihong Lu; Minghao Yu; Gongming Wang; Teng Zhai; Shilei Xie; Yichuan Ling; Yexiang Tong; Yat Li

A flexible solid-state asymmetric supercapacitor device with H-TiO(2) @MnO(2) core-shell NWs as the positive electrode and H-TiO(2) @C core-shell NWs as the negative electrode is developed. This device operates in a 1.8 V voltage window and is able to deliver a high specific capacitance of 139.6 F g(-1) and maximum volumetric energy density of 0.30 mWh cm(-3) with excellent cycling performance and good flexibility.


Nano Letters | 2011

Sn-Doped Hematite Nanostructures for Photoelectrochemical Water Splitting

Yichuan Ling; Gongming Wang; Damon A. Wheeler; Jin Z. Zhang; Yat Li

We report on the synthesis and characterization of Sn-doped hematite nanowires and nanocorals as well as their implementation as photoanodes for photoelectrochemical water splitting. The hematite nanowires were prepared on a fluorine-doped tin oxide (FTO) substrate by a hydrothermal method, followed by high temperature sintering in air to incorporate Sn, diffused from the FTO substrate, as a dopant. Sn-doped hematite nanocorals were prepared by the same method, by adding tin(IV) chloride as the Sn precursor. X-ray photoelectron spectroscopy analysis confirms Sn(4+) substitution at Fe(3+) sites in hematite, and Sn-dopant levels increase with sintering temperature. Sn dopant serves as an electron donor and increases the carrier density of hematite nanostructures. The hematite nanowires sintered at 800 °C yielded a pronounced photocurrent density of 1.24 mA/cm(2) at 1.23 V vs RHE, which is the highest value observed for hematite nanowires. In comparison to nanowires, Sn-doped hematite nanocorals exhibit smaller feature sizes and increased surface areas. Significantly, they showed a remarkable photocurrent density of 1.86 mA/cm(2) at 1.23 V vs RHE, which is approximately 1.5 times higher than that of the nanowires. Ultrafast spectroscopy studies revealed that there is significant electron-hole recombination within the first few picoseconds, while Sn doping and the change of surface morphology have no major effect on the ultrafast dynamics of the charge carriers on the picosecond time scales. The enhanced photoactivity in Sn-doped hematite nanostructures should be due to the improved electrical conductivity and increased surface area.


Nature Materials | 2008

Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers

Fang Qian; Yat Li; Silvija Gradečak; Hong Gyu Park; Yajie Dong; Yong Ding; Zhong Lin Wang; Charles M. Lieber

Rational design and synthesis of nanowires with increasingly complex structures can yield enhanced and/or novel electronic and photonic functions. For example, Ge/Si core/shell nanowires have exhibited substantially higher performance as field-effect transistors and low-temperature quantum devices compared with homogeneous materials, and nano-roughened Si nanowires were recently shown to have an unusually high thermoelectric figure of merit. Here, we report the first multi-quantum-well (MQW) core/shell nanowire heterostructures based on well-defined III-nitride materials that enable lasing over a broad range of wavelengths at room temperature. Transmission electron microscopy studies show that the triangular GaN nanowire cores enable epitaxial and dislocation-free growth of highly uniform (InGaN/GaN)n quantum wells with n=3, 13 and 26 and InGaN well thicknesses of 1-3 nm. Optical excitation of individual MQW nanowire structures yielded lasing with InGaN quantum-well composition-dependent emission from 365 to 494 nm, and threshold dependent on quantum well number, n. Our work demonstrates a new level of complexity in nanowire structures, which potentially can yield free-standing injection nanolasers.


Nano Letters | 2013

Au Nanostructure-Decorated TiO2 Nanowires Exhibiting Photoactivity Across Entire UV-visible Region for Photoelectrochemical Water Splitting

Ying-Chih Pu; Gongming Wang; Kao-Der Chang; Yichuan Ling; Yin-Kai Lin; Bob C. Fitzmorris; C. W. Liu; Xihong Lu; Yexiang Tong; Jin Z. Zhang; Yung-Jung Hsu; Yat Li

Here we demonstrate that the photoactivity of Au-decorated TiO2 electrodes for photoelectrochemical water oxidation can be effectively enhanced in the entire UV-visible region from 300 to 800 nm by manipulating the shape of the decorated Au nanostructures. The samples were prepared by carefully depositing Au nanoparticles (NPs), Au nanorods (NRs), and a mixture of Au NPs and NRs on the surface of TiO2 nanowire arrays. As compared with bare TiO2, Au NP-decorated TiO2 nanowire electrodes exhibited significantly enhanced photoactivity in both the UV and visible regions. For Au NR-decorated TiO2 electrodes, the photoactivity enhancement was, however, observed in the visible region only, with the largest photocurrent generation achieved at 710 nm. Significantly, TiO2 nanowires deposited with a mixture of Au NPs and NRs showed enhanced photoactivity in the entire UV-visible region. Monochromatic incident photon-to-electron conversion efficiency measurements indicated that excitation of surface plasmon resonance of Au is responsible for the enhanced photoactivity of Au nanostructure-decorated TiO2 nanowires. Photovoltage experiment showed that the enhanced photoactivity of Au NP-decorated TiO2 in the UV region was attributable to the effective surface passivation of Au NPs. Furthermore, 3D finite-difference time domain simulation was performed to investigate the electrical field amplification at the interface between Au nanostructures and TiO2 upon SPR excitation. The results suggested that the enhanced photoactivity of Au NP-decorated TiO2 in the UV region was partially due to the increased optical absorption of TiO2 associated with SPR electrical field amplification. The current study could provide a new paradigm for designing plasmonic metal/semiconductor composite systems to effectively harvest the entire UV-visible light for solar fuel production.


Energy and Environmental Science | 2014

Flexible solid-state supercapacitors: design, fabrication and applications

Xihong Lu; Minghao Yu; Gongming Wang; Yexiang Tong; Yat Li

Increasing power and energy demands for next-generation portable and flexible electronics such as roll-up displays, photovoltaic cells, and wearable devices have stimulated intensive efforts to explore flexible, lightweight and environmentally friendly energy storage devices. Flexible solid-state supercapacitors (SCs) have attracted increasing interest because they can provide substantially higher specific/volumetric energy density compared to conventional capacitors. Additionally, flexible solid-state SCs are typically small in size, highly reliable, light-weight, easy to handle, and have a wide range of operation temperatures. In this regard, solid-state SCs hold great promise as new energy storage devices for flexible and wearable electronics. In this article, we review recent achievements in the design, fabrication and characterization of flexible solid-state SCs. Moreover, we also discuss the current challenges and future opportunities for the development of high-performance flexible solid-state SCs.


Nano Letters | 2010

Double-sided CdS and CdSe quantum dot co-sensitized ZnO nanowire arrays for photoelectrochemical hydrogen generation.

Gongming Wang; Xunyu Yang; Fang Qian; Jin Z. Zhang; Yat Li

We report the design and characterization of a novel double-sided CdS and CdSe quantum dot cosensitized ZnO nanowire arrayed photoanode for photoelectrochemical (PEC) hydrogen generation. The double-sided design represents a simple analogue of tandem cell structure, in which the dense ZnO nanowire arrays were grown on an indium-tin oxide substrate followed by respective sensitization of CdS and CdSe quantum dots on each side. As-fabricated photoanode exhibited strong absorption in nearly the entire visible spectrum up to 650 nm, with a high incident-photon-to-current-conversion efficiency (IPCE) of approximately 45% at 0 V vs Ag/AgCl. On the basis on a single white light illumination of 100 mW/cm(2), the photoanode yielded a significant photocurrent density of approximately 12 mA/cm(2) at 0.4 V vs Ag/AgCl. The photocurrent and IPCE were enhanced compared to single quantum dot sensitized structures as a result of the band alignment of CdS and CdSe in electrolyte. Moreover, in comparison to single-sided cosensitized layered structures, this double-sided architecture that enables direct interaction between quantum dot and nanowire showed improved charge collection efficiency. Our result represents the first double-sided nanowire photoanode that integrates uniquely two semiconductor quantum dots of distinct band gaps for PEC hydrogen generation and can be possibly applied to other applications such as nanostructured tandem photovoltaic cells.


Nano Letters | 2013

High energy density asymmetric quasi-solid-state supercapacitor based on porous vanadium nitride nanowire anode.

Xihong Lu; Minghao Yu; Teng Zhai; Gongming Wang; Shilei Xie; Tianyu Liu; Chaolun Liang; Yexiang Tong; Yat Li

To push the energy density limit of asymmetric supercapacitors (ASCs), a new class of anode materials is needed. Vanadium nitride (VN) holds great promise as anode material for ASCs due to its large specific capacitance, high electrical conductivity, and wide operation windows in negative potential. However, its poor electrochemical stability severely limits its application in SCs. In this work, we demonstrated high energy density, stable, quasi-solid-state ASC device based on porous VN nanowire anode and VOx nanowire cathode for the first time. The VOx//VN-ASC device exhibited a stable electrochemical window of 1.8 V and excellent cycling stability with only 12.5% decrease of capacitance after 10,000 cycles. More importantly, the VOx//VN-ASC device achieved a high energy density of 0.61 mWh cm(-3) at current density of 0.5 mA cm(-2) and a high power density of 0.85 W cm(-3) at current density of 5 mA cm(-2). These values are substantially enhanced compared to most of the reported quasi/all-solid-state SC devices. This work constitutes the first demonstration of using VN nanowires as high energy anode, which could potentially improve the performance of energy storage devices.

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Gongming Wang

University of California

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Jin Z. Zhang

University of California

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Yichuan Ling

University of California

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Fang Qian

Lawrence Livermore National Laboratory

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Tianyu Liu

University of California

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Xihong Lu

Sun Yat-sen University

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Yi Yang

University of California

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Hanyu Wang

University of California

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Bin Yao

University of California

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