Yc Youcai Zhu

Ultrashort polarization converter on InP/InGaAsP fabricated by optical lithography

A compact, ultra short, integrated polarization converter has been fabricated by optical lithography. Length of the converter is 125 μm, and 325 μm including tapers. Conversion efficiency is higher than 95% and loss is less than 1 dB.

InAs–InP (1.55-

In this letter, we demonstrate electrically pumped continuous-wave lasing at room temperature in microring lasers, which employ a quantum-dot gain medium. Lasing occurs in the important 1.55-mum telecom wavelength range. The 2-mum-wide ring waveguides are made from InGaAsP-InP (100) material suitable for active-passive photonic integrated circuits. Lasing in rings down to 22 mum in diameter is found, with a threshold current of 12.5 mA.

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Ridge waveguides with smooth and vertical sidewalls are essential in photonic circuits. We have investigated waveguide realization with reactive ion etching of InP and InP-based structures using a SiNx in a Cl2/H2/CH4 chemistry in an ICP plasma. Depending on ICP power and RF power, etching rates can be obtained from 200 nm/min up to > 2μm/min. A maximum etching selectivity of InP vs SiNx of 12 was obtained at 2000 W of ICP power. Deep etched waveguides, fabricated in an InP/InGaAsP double heterostructure, show typical losses of 2 dB/cm. This low value shows the potential of ICP technique in the fabrication of photonic circuits.