Ye. Venger

Optical investigations of the influence of point defects on quantum dots in CdSe/ZnSe heterostructures

Optical properties of single-layer and multistack CdSe/ZnSe self-assembled quantum dot (QD) heterostructures have been investigated. It is found that QDs at the interface can accumulate cation vacancy-related defects. In this case the level of defects is associated with the quantized heavy-hole level of the QDs. It is shown that study of the excitation spectra of the defect-related band enables one to obtain information about optical transitions in QDs.

Optical characterization of CdZnTe/ZnTe heterostructures modified by electron or X-ray irradiation

Abstract The effect of electron and X-ray irradiation on the optical characteristics of CdZnTe/ZnTe quantum-size structures has been investigated. A comparison between the results of both irradiations has shown an essential role of electron excitation in radiation enhancement of Cd diffusion that is one of the reasons for degradation of the II–VI-based quantum-size structures. High defect density in the barrier layer and high stress level are considered to serve as additional reasons for degradation of the CdTe-based quantum size structures under irradiation.