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Dive into the research topics where Ye Xiao-Ling is active.

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Featured researches published by Ye Xiao-Ling.


Journal of Applied Physics | 2000

Structural and photoluminescence properties of In0.9(Ga/Al)0.1As self-assembled quantum dots on InP substrate

Sun Zhongzhe; Wu Ju; Liu Fengqi; Xu Huai-zhe; Chen Yonghai; Ye Xiao-Ling; Jiang Weihong; Xu Bo; Wang Zhanguo

Self-assembled In0.9Ga0.1As, In0.9Al0.1As, and InAs quantum dots (QD) were fabricated in an InAlAs matrix lattice-matched to an InP substrate by molecular beam epitaxy. Preliminary characterizations were performed using transmission electron microscopy, photoluminescence, and reflection high-energy electron diffraction. Experimental results reveal clear differences in QD formation, size distribution, and luminescence between the InAs and In-0.9(Ga/Al)(0.1)As samples, which show the potential of introducing ternary compositions to adjust the structural and optical properties of QDs on an InP substrate


Chinese Physics Letters | 2012

Metalorganic Chemical Vapor Deposition Growth of InAs/GaSb Superlattices on GaAs Substrates and Doping Studies of P-GaSb and N-InAs

Li Li-Gong; Liu Shu-Man; Luo Shuai; Yang Tao; Wang Lijun; Liu Fengqi; Ye Xiao-Ling; Xu Bo; Wang Zhanguo

InAs/GaSb type-II superlattices (SLs), Zn-doped GaSb and Si-doped InAs were grown on semi-insulating (001) GaAs substrates by metalorganic chemical vapor deposition. X-ray diffraction reveals that complete strain compensation between the SLs and the GaSb buffer layer is achieved in our SL samples. The relationship between the hole concentration p in GaSb and the diethylzinc (DEZn) flow rate is p ∝ [DEZn]0.57. The electron concentration in InAs does not show good linearity with the SiH4 flow rate. The growth rate of the p-GaSb epilayer is decreased as the DEZn mole fraction increases, while the growth rate of the n-InAs epilayer is weakly dependent on the SiH4 flow rate.


Journal of Semiconductors | 2010

Optimization of inductively coupled plasma etching for low nanometer scale air-hole arrays in two-dimensional GaAs-based photonic crystals

Peng Yinsheng; Ye Xiao-Ling; Xu Bo; Jin Peng; Niu Jiebin; Jia Rui; Wang Zhanguo

This paper mainly describes fabrication of two-dimensional GaAs-based photonic crystals with low nanometer scale air-hole arrays using an inductively coupled plasma (ICP) etching system. The sidewall profile and surface characteristics of the photonic crystals are systematically investigated as a function of process parameters including ICP power, RF power and pressure. Various ICP powers have no significant effect on the verticality of air-hole sidewall and surface smoothness. In contrast, RF power and chamber pressure play a remarkable role in improving sidewall verticality and surface characteristics of photonic crystals indicating different etching mechanisms for low nanometer scale photonic crystals. The desired photonic crystals have been achieved with hole diameters as low as 130 nm with smooth and vertical profiles by developing a suitable ICP processes. The influence of the ICP parameters on this device system are analyzed mainly by scanning electron microscopy. This fabrication approach is not limited to GaAs material, and may be efficiently applied to the development of most two-dimensional photonic crystal slabs.


Chinese Physics Letters | 2010

A Photovoltaic InAs Quantum-Dot Infrared Photodetector

Tang Guang-Hua; Xu Bo; Jiang Li-Wen; Kong Jinxia; Kong Ning; Liang Dechun; Liang Ping; Ye Xiao-Ling; Jin Peng; Liu Fengqi; Chen Yonghai; Wang Zhanguo

A photovoltaic quantum dot infrared photodetector with InAs/GaAs/AlGaAs structures is reported. The detector is sensitive to normal incident light. At zero bias and 78 K, a clear spectral response in the range of 2 -7 mu m has been obtained with peaks at 3.1, 4.8 and 5.7 mu m. The bandgap energies of GaAs and Al0.2Ga0.8As at 78K are calculated and the energy diagram of the transitions in the Quantum-Dot Infrared Photodetector (QDIP) is given out. The photocurrent signals can be detected up to 110 K, which is state-of-the-art for photovoltaic QDIP. The photovoltaic effect in our detector is a result of the enhanced band asymmetry as we design in the structure.


Chinese Physics Letters | 2001

Structure and photoluminescence of InGaAs quantum dots formed on an InAlAs wetting layer

Zhang Yuan-Chang; Huang Changjun; Ye Xiao-Ling; Xu Bo; Ding Ding; Wang Ji-Zheng; Li Yue-Fa; Liu Fengqi; Wang Zhanguo

We have developed a new self-assembled quantum dot system where InGaAs dots are formed on an InAlAs wetting layer and embedded in the GaAs matrix. The structure is realized by special sample designation and demonstrated by low-temperature photoluminescence measurements. In contrast to the traditional InAs/GaAs quantum dots dominated by the ensemble effect, the temperature dependence of the photoluminescence of such a quantum dot structure behaves as decoupled quantum dots. This can be attributed to the enhanced potential confinement for the dots provided by a higher-energy barrier in the wetting layer.


Chinese Physics Letters | 2013

Fabrication of Low-Density Long-Wavelength InAs Quantum Dots using a Formation-Dissolution-Regrowth Method

Zhang Shizhu; Ye Xiao-Ling; Xu Bo; Liu Shu-Man; Zhou Wenfei; Wang Zhanguo

Low-density (~109 cm−2), long-wavelength (more than 1300 nm at room temperature) InAs/GaAs quantum dots (QDs) with only 1.75-mono-layer (ML) InAs deposition were achieved by using a formation-dissolution-regrowth method. Firstly, small high-density InAs QDs were formed at 490°C, then the substrate temperature was ramped up to 530°C, and another 0.2 ML InAs was added. After this process, the density of the InAs QDs became much lower, and their size became much larger. The full width at half maximum of the photoluminescence peak of the low density, long-wavelength InAs QDs was as small as 27.5 meV.


Physica E-low-dimensional Systems & Nanostructures | 2000

Optical properties of self-assembled ternary In(GA/Al)As quantum dots on (100) and (N 1 1)B InP substrates

Sun Zhongzhe; Liu Fengqi; Wu Ju; Ye Xiao-Ling; Ding Ding; Xu Bo; Liang Ji-Ben; Wang Zhanguo

In this paper, we investigated the self-assembled quantum dots formed on (100) and (N11)B (N = 2, 3, 4, 5) InP substrates by molecular beam epitaxy (MBE). Two kinds of ternary QDs (In0.9Ga0.1As and In0.9Al0.1As QDs) are grown on the above substrates; Transmission electron microscopy (TEM) and photoluminescence (PL) results confirm QDs formation for all samples. The PL spectra reveal obvious differences in integral luminescence, peak position, full-width at half-maximum and peak shape between different oriented surfaces. Highest PL integral intensity is observed from QDs on (411)B surfaces, which shows a potential for improving the optical properties of QDs by using high-index surface


Archive | 2015

Micro-region fluorescent scanning measurement system

Qin Xudong; Zhang Hongyi; Ye Xiao-Ling; Chen Yonghai


Wuji Cailiao Xuebao | 2016

四段階法により高品質ケイ素基板を調製した。【JST・京大機械翻訳】

Liu Guangzheng; Xu Bo; Ye Xiao-Ling; Liu Fengqi; Wang Zhanguo


Journal of Inorganic Materials | 2016

Four-step Method for Growing High-quality GaAs Films on Si Substrate by Molecular Beam Epitaxy

Liu Guangzheng; Xu Bo; Ye Xiao-Ling; Liu Fengqi; Wang Zhanguo

Collaboration


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Wang Zhanguo

Chinese Academy of Sciences

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Xu Bo

Chinese Academy of Sciences

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Liu Fengqi

Chinese Academy of Sciences

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Chen Yonghai

Chinese Academy of Sciences

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Ding Ding

Chinese Academy of Sciences

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Jin Peng

Chinese Academy of Sciences

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Liu Shu-Man

Chinese Academy of Sciences

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Sun Zhongzhe

Chinese Academy of Sciences

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Wu Ju

Chinese Academy of Sciences

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Huang Changjun

Chinese Academy of Sciences

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