Yeonchoo Cho

Fast DNA sequencing with a graphene-based nanochannel device.

Devices in which a single strand of DNA is threaded through a nanopore could be used to efficiently sequence DNA. However, various issues will have to be resolved to make this approach practical, including controlling the DNA translocation rate, suppressing stochastic nucleobase motions, and resolving the signal overlap between different nucleobases. Here, we demonstrate theoretically the feasibility of DNA sequencing using a fluidic nanochannel functionalized with a graphene nanoribbon. This approach involves deciphering the changes that occur in the conductance of the nanoribbon as a result of its interactions with the nucleobases via π-π stacking. We show that as a DNA strand passes through the nanochannel, the distinct conductance characteristics of the nanoribbon (calculated using a method based on density functional theory coupled to non-equilibrium Green function theory) allow the different nucleobases to be distinguished using a data-mining technique and a two-dimensional transient autocorrelation analysis. This fast and reliable DNA sequencing device should be experimentally feasible in the near future.

Chromium Porphyrin Arrays As Spintronic Devices

Spintronic devices are very important for futuristic information technology. Suitable materials for such devices should have half-metallic properties so that only one spin passes through the device. In particular, organic half metals have the advantage that they may be used for flexible devices and have a long spin-coherence length. We predict that the one-dimensional infinite chromium porphyrin array, which we call Cr-PA(∞), shows half-metallic behavior when the spins on the chromium atoms are in a parallel alignment. Since the chromium atoms are separated by a large distance (>8 Å), the coupling between spins is small and thus their directions can be readily controlled by an external magnetic field. In the ferromagnetic state, the band gap for major spin electrons is 0.30 eV, while there is no band gap for the minor spin electrons, thus reflecting the half-metallic property. This unique property originates from the high spin state of Cr which results in the spin asymmetry of the conduction band in Cr-PA(∞). Electron transport of Cr-PA(1,2,3) is calculated with the nonequilibrium Green function technique in the presence of Au electrodes. It turned out that the spin-filtering ability appears from the dimeric Cr-PA(2). Thus, a new organometallic framework for designing a spin filter is proposed. Though many others have designed novel spintronic devices, none of them are realized due to the lack of a practical fabrication method at present. However, the porphyrin-based spintronic device provides a synthesizable framework.

Noncovalent Interactions of DNA Bases with Naphthalene and Graphene

The complexes of a DNA base bound to graphitic systems are studied. Considering naphthalene as the simplest graphitic system, DNA base-naphthalene complexes are scrutinized at high levels of ab initio theory including coupled cluster theory with singles, doubles, and perturbative triples excitations [CCSD(T)] at the complete basis set (CBS) limit. The stacked configurations are the most stable, where the CCSD(T)/CBS binding energies of guanine, adenine, thymine, and cytosine are 9.31, 8.48, 8.53, 7.30 kcal/mol, respectively. The energy components are investigated using symmetry-adapted perturbation theory based on density functional theory including the dispersion energy. We compared the CCSD(T)/CBS results with several density functional methods applicable to periodic systems. Considering accuracy and availability, the optB86b nonlocal functional and the Tkatchenko-Scheffler functional are used to study the binding energies of nucleobases on graphene. The predicted values are 18-24 kcal/mol, though many-body effects on screening and energy need to be further considered.

Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides

Electrical metal contacts to two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) are found to be the key bottleneck to the realization of high device performance due to strong Fermi level pinning and high contact resistances (Rc). Until now, Fermi level pinning of monolayer TMDCs has been reported only theoretically, although that of bulk TMDCs has been reported experimentally. Here, we report the experimental study on Fermi level pinning of monolayer MoS2 and MoTe2 by interpreting the thermionic emission results. We also quantitatively compared our results with the theoretical simulation results of the monolayer structure as well as the experimental results of the bulk structure. We measured the pinning factor S to be 0.11 and -0.07 for monolayer MoS2 and MoTe2, respectively, suggesting a much stronger Fermi level pinning effect, a Schottky barrier height (SBH) lower than that by theoretical prediction, and interestingly similar pinning energy levels between monolayer and bulk MoS2. Our results further imply that metal work functions have very little influence on contact properties of 2D-material-based devices. Moreover, we found that Rc is exponentially proportional to SBH, and these processing parameters can be controlled sensitively upon chemical doping into the 2D materials. These findings provide a practical guideline for depinning Fermi level at the 2D interfaces so that polarity control of TMDC-based semiconductors can be achieved efficiently.

Effect of Electrodes on Electronic Transport of Molecular Electronic Devices

Understanding the effects of each component of a molecular device is at the heart of designing a useful device. Molecular cores and linkers are well studied, but relatively few studies have been devoted to investigating the electrode effect on a molecular electronic device. Here, we study unique characteristics of Au, Ru, and carbon nanotube electrodes using the nonequilibrium Green function method combined with a density functional theory. By systematic modification of the device region, we extract the effect of the electrode materials on the electron transport. We show that the band structure and surface density of states of an electrode material, independent of the choice of other device components, have unique influences on the transmission curve. We note that carbon nanotube electrodes can offer unusual nonlinear current-voltage characteristics.

Density functional theory based study of molecular interactions, recognition, engineering, and quantum transport in π molecular systems.

CONSPECTUS: In chemical and biological systems, various interactions that govern the chemical and physical properties of molecules, assembling phenomena, and electronic transport properties compete and control the microscopic structure of materials. The well-controlled manipulation of each component can allow researchers to design receptors or sensors, new molecular architectures, structures with novel morphology, and functional molecules or devices. In this Account, we describe the structures and electronic and spintronic properties of π-molecular systems that are important for controlling the architecture of a variety of carbon-based systems. Although DFT is an important tool for describing molecular interactions, the inability of DFT to accurately represent dispersion interactions has made it difficult to properly describe π-interactions. However, the recently developed dispersion corrections for DFT have allowed us to include these dispersion interactions cost-effectively. We have investigated noncovalent interactions of various π-systems including aromatic-π, aliphatic-π, and non-π systems based on dispersion-corrected DFT (DFT-D). In addition, we have addressed the validity of DFT-D compared with the complete basis set (CBS) limit values of coupled cluster theory with single, double, and perturbative triple excitations [CCSD(T)] and Møller-Plesset second order perturbation theory (MP2). The DFT-D methods are still unable to predict the correct ordering in binding energies within the benzene dimer and the cyclohexane dimer. Nevertheless, the overall DFT-D predicted binding energies are in reasonable agreement with the CCSD(T) results. In most cases, results using the B97-D3 method closely reproduce the CCSD(T) results with the optimized energy-fitting parameters. On the other hand, vdW-DF2 and PBE0-TS methods estimate the dispersion energies from the calculated electron density. In these approximations, the interaction energies around the equilibrium point are reasonably close to the CCSD(T) results but sometimes slightly deviate from them because interaction energies were not particularly optimized with parameters. Nevertheless, because the electron cloud deforms when neighboring atoms/ions induce an electric field, both vdW-DF2 and PBE0-TS seem to properly reproduce the resulting change of dispersion interaction. Thus, improvements are needed in both vdW-DF2 and PBE0-TS to better describe the interaction energies, while the B97-D3 method could benefit from the incorporation of polarization-driven energy changes that show highly anisotropic behavior. Although the current DFT-D methods need further improvement, DFT-D is very useful for computer-aided molecular design. We have used these newly developed DFT-D methods to calculate the interactions between graphene and DNA nucleobases. Using DFT-D, we describe the design of molecular receptors of π-systems, graphene based electronic devices, metalloporphyrin half-metal based spintronic devices as graphene nanoribbon (GNR) analogs, and graphene based molecular electronic devices for DNA sequencing. DFT-D has also helped us understand quantum phenomena in materials and devices of π-systems including graphene.

Two Dimensional Molecular Electronics Spectroscopy for Molecular Fingerprinting, DNA Sequencing, and Cancerous DNA Recognition

Laser-driven molecular spectroscopy of low spatial resolution is widely used, while electronic current-driven molecular spectroscopy of atomic scale resolution has been limited because currents provide only minimal information. However, electron transmission of a graphene nanoribbon on which a molecule is adsorbed shows molecular fingerprints of Fano resonances, i.e., characteristic features of frontier orbitals and conformations of physisorbed molecules. Utilizing these resonance profiles, here we demonstrate two-dimensional molecular electronics spectroscopy (2D MES). The differential conductance with respect to bias and gate voltages not only distinguishes different types of nucleobases for DNA sequencing but also recognizes methylated nucleobases which could be related to cancerous cell growth. This 2D MES could open an exciting field to recognize single molecule signatures at atomic resolution. The advantages of the 2D MES over the one-dimensional (1D) current analysis can be comparable to those of 2D NMR over 1D NMR analysis.

Control of Triboelectrification by Engineering Surface Dipole and Surface Electronic State

Although triboelectrification is a well-known phenomenon, fundamental understanding of its principle on a material surface has not been studied systematically. Here, we demonstrated that the surface potential, especially the surface dipoles and surface electronic states, governed the triboelectrification by controlling the surface with various electron-donating and -withdrawing functional groups. The functional groups critically affected the surface dipoles and surface electronic states followed by controlling the amount of and even the polarity of triboelectric charges. As a result, only one monolayer with a thickness of less than 1 nm significantly changed the conventional triboelectric series. First-principles simulations confirmed the atomistic origins of triboelectric charges and helped elucidate the triboelectrification mechanism. The simulation also revealed for the first time where charges are retained after triboelectrification. This study provides new insights to understand triboelectrification.

Finite-size scaling theory for explosive percolation transitions.

The finite-size scaling (FSS) theory for continuous phase transitions has been useful in determining the critical behavior from the size-dependent behaviors of thermodynamic quantities. When the phase transition is discontinuous, however, FSS approach has not been well established yet. Here, we develop a FSS theory for the explosive percolation transition arising in the Erdős and Rényi model under the Achlioptas process. A scaling function is derived based on the observed fact that the derivative of the curve of the order parameter at the critical point t(c) diverges with system size in a power-law manner, which is different from the conventional one based on the divergence of the correlation length at t(c). We show that the susceptibility is also described in the same scaling form. Numerical simulation data for different system sizes are well collapsed on the respective scaling functions.

Mesostructured HfxAlyO2 Thin Films as Reliable and Robust Gate Dielectrics with Tunable Dielectric Constants for High-Performance Graphene-Based Transistors

We introduce a reliable and robust gate dielectric material with tunable dielectric constants based on a mesostructured HfxAlyO2 film. The ultrathin mesostructured HfxAlyO2 film is deposited on graphene via a physisorbed-precursor-assisted atomic layer deposition process and consists of an intermediate state with small crystallized parts in an amorphous matrix. Crystal phase engineering using Al dopant is employed to achieve HfO2 phase transitions, which produce the crystallized part of the mesostructured HfxAlyO2 film. The effects of various Al doping concentrations are examined, and an enhanced dielectric constant of ∼25 is obtained. Further, the leakage current is suppressed (∼10(-8) A/cm(2)) and the dielectric breakdown properties are enhanced (breakdown field: ∼7 MV/cm) by the partially remaining amorphous matrix. We believe that this contribution is theoretically and practically relevant because excellent gate dielectric performance is obtained. In addition, an array of top-gated metal-insulator-graphene field-effect transistors is fabricated on a 6 in. wafer, yielding a capacitance equivalent oxide thickness of less than 1 nm (0.78 nm). This low capacitance equivalent oxide thickness has important implications for the incorporation of graphene into high-performance silicon-based nanoelectronics.