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Featured researches published by Kyung-Eun Byun.


Science | 2012

Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier

Heejun Yang; Jinseong Heo; Seongjun Park; Hyun Jae Song; David H. Seo; Kyung-Eun Byun; Philip Kim; In-kyeong Yoo; Hyun-jong Chung; Kinam Kim

Updating the Triode with Graphene In early electronics, the triode—a vacuum device that combined a diode and an electrical grid—was used to control and amplify signals, but was replaced in most applications by solid-state silicon electronics. One characteristic of silicon-metal interfaces is that the Schottky barrier created—which acts as a diode—does not change with the work function of the metal—the Fermi level is pinned by the presence of surface states. Yang et al. (p. 1140, published online 17 May) now show that for a graphene-silicon interface, Fermi-level pinning can be overcome and a triode-type device with a variable barrier, a “barristor,” can be made and used to create devices such as inverters. The absence of defects and surface oxides at a graphene/silicon interface enables voltage control of graphene devices. Despite several years of research into graphene electronics, sufficient on/off current ratio Ion/Ioff in graphene transistors with conventional device structures has been impossible to obtain. We report on a three-terminal active device, a graphene variable-barrier “barristor” (GB), in which the key is an atomically sharp interface between graphene and hydrogenated silicon. Large modulation on the device current (on/off ratio of 105) is achieved by adjusting the gate voltage to control the graphene-silicon Schottky barrier. The absence of Fermi-level pinning at the interface allows the barrier’s height to be tuned to 0.2 electron volt by adjusting graphene’s work function, which results in large shifts of diode threshold voltages. Fabricating GBs on respective 150-mm wafers and combining complementary p- and n-type GBs, we demonstrate inverter and half-adder logic circuits.


Advanced Materials | 2014

Highly Stretchable Resistive Pressure Sensors Using a Conductive Elastomeric Composite on a Micropyramid Array

Chwee-Lin Choong; Mun-Bo Shim; Byoung-Sun Lee; Sanghun Jeon; Dong‐Su Ko; Tae-Hyung Kang; Jihyun Bae; Sung Hoon Lee; Kyung-Eun Byun; Jungkyun Im; Yong Jin Jeong; Chan Eon Park; Jong-Jin Park; U-In Chung

A stretchable resistive pressure sensor is achieved by coating a compressible substrate with a highly stretchable electrode. The substrate contains an array of microscale pyramidal features, and the electrode comprises a polymer composite. When the pressure-induced geometrical change experienced by the electrode is maximized at 40% elongation, a sensitivity of 10.3 kPa(-1) is achieved.


Advanced Materials | 2014

A Flexible Bimodal Sensor Array for Simultaneous Sensing of Pressure and Temperature

Nguyen Thanh Tien; Sanghun Jeon; Do-Il Kim; Tran Quang Trung; Mi Jang; Byeong-Ung Hwang; Kyung-Eun Byun; Jihyun Bae; Eunha Lee; Jeffrey B.-H. Tok; Zhenan Bao; Nae-Eung Lee; Jong-Jin Park

Diverse signals generated from the sensing elements embedded in flexible electronic skins (e-skins) are typically interfered by strain energy generated through processes such as touching, bending, stretching or twisting. Herein, we demonstrate a flexible bimodal sensor that can separate a target signal from the signal by mechanical strain through the integration of a multi-stimuli responsive gate dielectric and semiconductor channel into the single field-effect transistor (FET) platform.


Advanced Materials | 2015

Polythiophene Nanofibril Bundles Surface‐Embedded in Elastomer: A Route to a Highly Stretchable Active Channel Layer

Minkwan Shin; Jin Young Oh; Kyung-Eun Byun; Yujeong Lee; Bongsoo Kim; Hong-Koo Baik; Jong-Jin Park; Unyong Jeong

A stretchable polymer channel layer for organic field-effect transistors is obtained by spin-coating a blend solution of polythiophene and rubber polymer. A network of the polythiophene nanofibril bundles surface-embedded in the rubber matrix allows large stretchability of the polythiophene film layer.


Nano Letters | 2013

Graphene and Thin-Film Semiconductor Heterojunction Transistors Integrated on Wafer Scale for Low-Power Electronics

Jinseong Heo; Kyung-Eun Byun; Jaeho Lee; Hyun-jong Chung; Sanghun Jeon; Seongjun Park; Sungwoo Hwang

Graphene heterostructures in which graphene is combined with semiconductors or other layered 2D materials are of considerable interest, as a new class of electronic devices has been realized. Here we propose a technology platform based on graphene-thin-film-semiconductor-metal (GSM) junctions, which can be applied to large-scale and power-efficient electronics compatible with a variety of substrates. We demonstrate wafer-scale integration of vertical field-effect transistors (VFETs) based on graphene-In-Ga-Zn-O (IGZO)-metal asymmetric junctions on a transparent 150 × 150 mm(2) glass. In this system, a triangular energy barrier between the graphene and metal is designed by selecting a metal with a proper work function. We obtain a maximum current on/off ratio (Ion/Ioff) up to 10(6) with an average of 3010 over 2000 devices under ambient conditions. For low-power logic applications, an inverter that combines complementary n-type (IGZO) and p-type (Ge) devices is demonstrated to operate at a bias of only 0.5 V.


Nano Letters | 2013

Graphene for true Ohmic contact at metal-semiconductor junctions.

Kyung-Eun Byun; Hyun-jong Chung; Jaeho Lee; Heejun Yang; Hyun Jae Song; Jinseong Heo; David H. Seo; Seongjun Park; Sung Woo Hwang; In-kyeong Yoo; Kinam Kim

The rectifying Schottky characteristics of the metal-semiconductor junction with high contact resistance have been a serious issue in modern electronic devices. Herein, we demonstrated the conversion of the Schottky nature of the Ni-Si junction, one of the most commonly used metal-semiconductor junctions, into an Ohmic contact with low contact resistance by inserting a single layer of graphene. The contact resistance achieved from the junction incorporating graphene was about 10(-8) ~ 10(-9) Ω cm(2) at a Si doping concentration of 10(17) cm(-3).


ACS Nano | 2011

Polarization-Controlled Differentiation of Human Neural Stem Cells Using Synergistic Cues from the Patterns of Carbon Nanotube Monolayer Coating

Sung Young Park; Dong Shin Choi; Hye Jun Jin; Juhun Park; Kyung-Eun Byun; Ki-Bum Lee; Seunghun Hong

We report a method for selective growth and structural-polarization-controlled neuronal differentiation of human neural stem cells (hNSCs) into neurons using carbon nanotube network patterns. The CNT patterns provide synergistic cues for the differentiation of hNSCs in physiological solution and an optimal nanotopography at the same time with good biocompatibility. We demonstrated a polarization-controlled neuronal differentiation at the level of individual NSCs. This result should provide a stable and versatile platform for controlling the hNSC growth because CNT patterns are known to be stable in time unlike commonly used organic molecular patterns.


ACS Nano | 2011

Graphene-polymer hybrid nanostructure-based bioenergy storage device for real-time control of biological motor activity.

Kyung-Eun Byun; Dong Shin Choi; Eunji Kim; David H. Seo; Heejun Yang; Sunae Seo; Seunghun Hong

We report a graphene-polymer hybrid nanostructure-based bioenergy storage device to turn on and off biomotor activity in real-time. In this strategy, graphene was functionalized with amine groups and utilized as a transparent electrode supporting the motility of biomotors. Conducting polymer patterns doped with adenosine triphosphate (ATP) were fabricated on the graphene and utilized for the fast release of ATP by electrical stimuli through the graphene. The controlled release of biomotor fuel, ATP, allowed us to control the actin filament transportation propelled by the biomotor in real-time. This strategy should enable the integrated nanodevices for the real-time control of biological motors, which can be a significant stepping stone toward hybrid nanomechanical systems based on motor proteins.


ACS Nano | 2011

Scanning noise microscopy on graphene devices.

Moon Gyu Sung; Hyungwoo Lee; Kwang Heo; Kyung-Eun Byun; Taekyeong Kim; David H. Seo; Sunae Seo; Seunghun Hong

We developed a scanning noise microscopy (SNM) method and demonstrated the nanoscale noise analysis of a graphene strip-based device. Here, a Pt tip made a direct contact on the surface of a nanodevice to measure the current noise spectrum through it. Then, the measured noise spectrum was analyzed by an empirical model to extract the noise characteristics only from the device channel. As a proof of concept, we demonstrated the scaling behavior analysis of the noise in graphene strips. Furthermore, we performed the nanoscale noise mapping on a graphene channel, allowing us to study the effect of structural defects on the noise of the graphene channel. The SNM method is a powerful tool for nanoscale noise analysis and should play a significant role in basic research on nanoscale devices.


Small | 2009

Functionalization of silicon nanowires with actomyosin motor protein for bioinspired nanomechanical applications.

Kyung-Eun Byun; Kwang Heo; Sojung Shim; Heon-Jin Choi; Seunghun Hong

Motor proteins generate motions in a biological system by converting the chemical energy of adenosine triphosphate (ATP) into mechanical energy. Actin filament/myosin (actomyosin) is a well-studied example, and it performs essential functions in biological systems, such as muscle contraction, organelle transport, and cell motility. A common experimental scheme tostudymotorproteins is aglidingassayonglass substrates,where themotionsof actin filaments are analyzedon randomly distributed myosin on two-dimensional (2D) substrates. In this case, the actin filaments exhibited rather disordered motions close to a 2D random walk, which is somewhat different to that in vivo systems. In muscle cells, myosin goes through one-dimensional (1D) motion on straight actin filaments. Many researchers have tried to build narrow myosin patterns or guiding channels to imitate 1D in vivo systems. However, previous strategies have often suffered fromvarious limitations.Forexample, theguidingbarriers used to confine actin filaments in 1D trajectories can disturb the natural motion of actomyosin. Without guiding barriers, actin filaments can easily leave the narrow myosin patterns. On the other hand, motor proteins have been actively investigated for protein-based nanomechanical systems due to their high fuel efficiencyand large forcegeneration.For suchapplications, one

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