Yeong Hwan Ahn

Active terahertz nanoantennas based on VO2 phase transition.

Unusual performances of metamaterials such as negative index of refraction, memory effect, and cloaking originate from the resonance features of the metallic composite atom(1-6). Indeed, control of metamaterial properties by changing dielectric environments of thin films below the metallic resonators has been demonstrated(7-11). However, the dynamic control ranges are still limited to less than a factor of 10,(7-11) with the applicable bandwidth defined by the sharp resonance features. Here, we present ultra-broad-band metamaterial thin film with colossal dynamic control range, fulfilling present day research demands. Hybridized with thin VO(2) (vanadium dioxide) (12-18) films, nanoresonator supercell arrays designed for one decade of spectral width in terahertz frequency region show an unprecedented extinction ratio of over 10000 when the underlying thin film experiences a phase transition. Our nanoresonator approach realizes the full potential of the thin film technology for long wavelength applications.

Efficient Mode-Locking of Sub-70-fs Ti:Sapphire Laser by Graphene Saturable Absorber

The efficient passive mode-locking of a Ti:sapphire laser with a monolayer graphene saturable absorber is demonstrated for the first time. High-quality and large-area (1 in.) monolayer graphene, synthesized by chemical vapor deposition, exhibits ultrafast recovery times and excellent nonlinear absorption behavior for bulk solid-state laser mode-locking near 800 nm. The continuous-wave mode-locked Ti:sapphire laser generates 63-fs pulses with output powers up to 480 mW under stable operation at 99.4 MHz.

Fabrication and characterization of ultrafast carbon nanotube saturable absorbers for solid-state laser mode locking near 1μm

Transmitting and reflecting ultrafast saturable absorbers based on single-walled carbon nanotubes are developed that are applicable for stable mode locking of bulk solid-state lasers operating near 1μm. For fabrication of these saturable absorbers, relatively simple spin coating and spray methods are employed. Parameters important for stable mode locking, such as transient nonlinear absorption, saturation fluence, and recovery time, are investigated by nonlinear transmission and time-resolved pump-probe measurements near 1μm. Typical modulation depths and recovery times amount to ∼0.21%–0.25% and <1ps, respectively.

Efficient visible light detection using individual germanium nanowire field effect transistors

We report photoconductivity (PC) in individual germanium nanowire field effect transistors (GeFETs). PC measurements with a global illumination reveal that GeFETs can be used as a polarization-sensitive nanoscale light detector in the visible range. It is also found that the PC shows sensitive optical response especially in the low intensity regime. We observe a high internal gain in PC in conjunction with strong saturation behavior, which is attributed to the filling of surface trapping states. This mechanism for high internal gain is consistent with spatially resolved scanning photocurrent measurements, whose results confirm that optical absorption is in the linear regime.

Active control of all-fibre graphene devices with electrical gating

Active manipulation of light in optical fibres has been extensively studied with great interest because of its compatibility with diverse fibre-optic systems. While graphene exhibits a strong electro-optic effect originating from its gapless Dirac-fermionic band structure, electric control of all-fibre graphene devices remains still highly challenging. Here we report electrically manipulable in-line graphene devices by integrating graphene-based field effect transistors on a side-polished fibre. Ion liquid used in the present work critically acts both as an efficient gating medium with wide electrochemical windows and transparent over-cladding facilitating light–matter interaction. Combined study of unique features in gate-variable electrical transport and optical transition at monolayer and randomly stacked multilayer graphene reveals that the device exhibits significant optical transmission change (>90%) with high efficiency-loss figure of merit. This subsequently modifies nonlinear saturable absorption characteristics of the device, enabling electrically tunable fibre laser at various operational regimes. The proposed device will open promising way for actively controlled optoelectronic and nonlinear photonic devices in all-fibre platform with greatly enhanced graphene–light interaction.

Low temperature cathodoluminecence and electron beam induced current studies of single GaN nanowires

Single crystalline GaN nanowires, with 100u2009nm typical diameters, were grown by chemical vapor deposition method, using Pt catalyst, and characterized by cathodoluminescence and electron beam induced current (EBIC) measurements at 5u2009K. The near band edge emission was found to be asymmetric and broad, with full width half maximum of around 150u2009meV, peaking at 3.55u2009eV, well above the GaN bulk band gap. This blueshift was ascribed to band filling effect resulting from unintentional n-type doping in the range 1019–1020u2009cm−3. Despite of this heavy doping, EBIC experiments showed that minority carriers can diffuse over 0.2u2009μm.

Optical waveguide and cavity effects on whispering-gallery mode resonances in a ZnO nanonail

Spatially resolved cathodoluminescence (CL) study of a ZnO nanonail, having thin shank, tapered neck, and hexagonal head sections, is reported. Monochromatic imaging and line-scan profiling indicate that the wave guiding and leaking from growth imperfections in addition to the oxygen-deficiency variation determine the spatial contrast of CL emissions. Occurrence of resonance peaks at identical wavelengths regardless of CL-excitation spots is inconsistent with the whispering-gallery mode (WGM) resonances of a two-dimensional cavity in the finite-difference time domain simulation. However, three-dimensioanl cavity simulation produced WGM peaks that are consistent with the experimental spectra, including transverse-electric resonances that are comparable to transverse-magnetic ones.

Terahertz Wave Applications of Single-Walled Carbon Nanotube Films with High Shielding Effectiveness

We demonstrate that a filtration method is efficient for the fabrication of thick single-walled nanotube films and is capable of shielding terahertz waves. Shielding effectiveness can be engineered by controlling the film thickness and we achieved 38 dB for a 950-nm-thick film. In addition, we found that the films exhibit a dispersion of dielectric constant obeying the Drude free-electron model, whereas the plasma frequency decreases with increasing film thickness. Based on the nanotube films with a thickness greater than the skin depth, we fabricated grid polarizers by laser-machining process, which enable us to achieve a large polarization extinction ratio.

Suppressing spontaneous polarization of p-GaN by graphene oxide passivation: Augmented light output of GaN UV-LED

GaN-based ultraviolet (UV) LEDs are widely used in numerous applications, including white light pump sources and high-density optical data storage. However, one notorious issue is low hole injection rate in p-type transport layer due to poorly activated holes and spontaneous polarization, giving rise to insufficient light emission efficiency. Therefore, improving hole injection rate is a key step towards high performance UV-LEDs. Here, we report a new method of suppressing spontaneous polarization in p-type region to augment light output of UV-LEDs. This was achieved by simply passivating graphene oxide (GO) on top of the fully fabricated LED. The dipole layer formed by the passivated GO enhanced hole injection rate by suppressing spontaneous polarization in p-type region. The homogeneity of electroluminescence intensity in active layers was improved due to band filling effect. As a consequence, the light output was enhanced by 60% in linear current region. Our simple approach of suppressing spontaneous polarization of p-GaN using GO passivation disrupts the current state of the art technology and will be useful for high-efficiency UV-LED technology.

Imaging Ultrafast Carrier Transport in Nanoscale Field-Effect Transistors

One-dimensional nanoscale devices, such as semiconductor nanowires (NWs) and single- walled carbon nanotubes (SWNTs), have been intensively investigated because of their potential application of future high-speed electronic, optoelectronic, and sensing devices. To overcome current limitations on the speed of contemporary devices, investigation of charge carrier dynamics with an ultrashort time scale is one of the primary steps necessary for developing high-speed devices. In the present study, we visualize ultrafast carrier dynamics in nanoscale devices using a combination of scanning photocurrent microscopy and time- resolved pump-probe techniques. We investigate transit times of carriers that are generated near one metallic electrode and subsequently transported toward the opposite electrode based on drift and diffusion motions. Carrier dynamics have been measured for various working conditions. In particular, the carrier velocities extracted from transit times increase for a larger negative gate bias, because of the increased field strength at the Schottky barrier.In the present study, we visualize ultrafast carrier dynamics in one-dimensional nanoscale devices, such as Si nanowire and carbon nanotube transistors using femtosecond photocurrent microscopy. We investigate transit times of ultrashort carriers that are generated near one metallic electrode and subsequently transported toward the opposite electrode based on drift and diffusion motions. Conversely, pure diffusion motion is observed when the pump pulse is located in the middle of the nanowires. Carrier dynamics have been addressed for various working conditions, in which we found that the carrier velocity and pulse width can be manipulated by the external electrodes. In particular, the carrier velocities extracted from transit times increase for a larger negative gate bias because of the increased field strength at the Schottky barrier.