Yi-Shien Mor

Effective strategy for porous organosilicate to suppress oxygen ashing damage

Photoresist stripping with oxygen plasma ashing destroys numerous functional groups in porous organosilicate glasses (OSGs). This impact makes the porous OSG relatively hydrophilic and causes low-k dielectric degradation.To mitigate these issues, various strategies are investigated to enhance oxygen plasma resistance of the porous OSG. These include physical and chemical procedures. Both structural and electrical analyses are used to determine their efficiency. In addition, an optimum prescription that consists of H 2 plasma and chemical trimethylchlorosilane treatment is developed in this work. The enhancement of oxygen plasma resistance can provide the porous OSG for practical application in the multilevel interconnection.

Moisture-Induced Material Instability of Porous Organosilicate Glass

The mechanism of leakage current of porous organosilicate glass (POSG) with O 2 plasma ashing is investigated. The O 2 plasma ashing often deteriorates the POSG film, causing moisture uptake. We find that the leakage-current mechanism of POSG transforms from Schottky emission into ionic conduction after O 2 plasma treatment. The mobile ions (H + ,OH - ) supported by absorbing moisture move easily when an external electric field is applied to POSG film, which leads to the ionic conduction leakage current across the moisture-absorbing POSG film. Hence, the leakage current density is drastically increased about four to five orders of magnitude compared with untreated POSG film.

Direct Patterning of Low-k Hydrogen Silsesquioxane Using X-Ray Exposure Technology

An inorganic low-k material, hydrogen silsesquioxane (HSQ). patterned directly using X-ray exposure technology was investigated. In conventional integrated circuit integration processes, photoresist (PR) stripping with O 2 plasma and wet chemical stripper are inevitable steps. However, dielectric degradation often occurs when low-k dielectrics undergo PR stripping processes. To overcome the integration issue X-ray direct patterning is proposed. In this technology, the dielectric regions illuminated by X-ray are cross-linked and form desired pattern;. while the regions without X-ray illumination are dissolvable in the solvent of HSQ solution. An optical microscope image of an HSQ linear pattern was demonstrated for the first time to verify process feasibility.

The novel precleaning treatment for selective tungsten chemical vapor deposition

Abstract The new solutions, hydroxylamine sulfate [(NH2OH)2H2SO4] combined with CuSO4, for cleaning Al via were investigated. It is found that the cleaning capability of hydroxylamine sulfate combined with CuSO4 is better than that of hydroxylamine sulfate. Low via resistance of electrical test structure is obtained if the via is cleaned by this new cleaning solution. The hydroxylamine sulfate can efficiently remove Al3O2 and leave the clean Al on the surface of via. Then, the Cu ion in this new solution will immediately react with clean Al and form a copper passivating layer on the surface of via. The copper is more stable than aluminum in the environment and hard to be oxidized. Therefore, hydroxylamine sulfate combined with CuSO4 can provide excellent cleaning capability for aluminum via holes. Also, the clean surface on the bottom of via is helpful for tungsten nucleation in via during CVD-W deposition. Therefore, a low via resistance and good selectivity of tungsten plug are obtained when the Al via is precleaned with this new solution.

Direct Patterning of Low-k Hydrogen Silsesquioxane Using X-Ray Exposure Technology [Electrochemical and Solid-State Letters, 6, G69 (2003)]

Direct Patterning of Low-k Hydrogen Silsesquioxane Using X-Ray Exposure Technology †Electrochemical and Solid-State Letters, 6, G69 „2003...‡ T. C. Chang, T. M. Tsai, P. T. Liu, Y. S. Mor, C. W. Chen, J. T. Sheu, and T. Y. Tseng Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan Institute of Electronics, National Chiao Tung University, Hsin-Chu, Taiwan National Nano Device Laboratory, Hsin-Chu 300, Taiwan Department of Electrical Engineering, National Chi Nan University, Puli-Nantou, Taiwan 545