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Dive into the research topics where Yian Tai is active.

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Featured researches published by Yian Tai.


ACS Nano | 2013

Band Gap Engineering of Chemical Vapor Deposited Graphene by in-situ BN Doping

Cheng-Kai Chang; Satender Kataria; Chun-Chiang Kuo; Abhijit Ganguly; Bo-Yao Wang; Jeong-Yuan Hwang; Kay-Jay Huang; Wei-Hsun Yang; Sheng-Bo Wang; Cheng-Hao Chuang; Mi Chen; Ching-I Huang; Way-Faung Pong; Ker-Jar Song; Shoou-Jinn Chang; Jinghua Guo; Yian Tai; Masahiko Tsujimoto; Seiji Isoda; Chun-Wei Chen; Li-Chyong Chen; Kuei-Hsien Chen

Band gap opening and engineering is one of the high priority goals in the development of graphene electronics. Here, we report on the opening and scaling of band gap in BN doped graphene (BNG) films grown by low-pressure chemical vapor deposition method. High resolution transmission electron microscopy is employed to resolve the graphene and h-BN domain formation in great detail. X-ray photoelectron, micro-Raman, and UV-vis spectroscopy studies revealed a distinct structural and phase evolution in BNG films at low BN concentration. Synchrotron radiation based XAS-XES measurements concluded a gap opening in BNG films, which is also confirmed by field effect transistor measurements. For the first time, a significant band gap as high as 600 meV is observed for low BN concentrations and is attributed to the opening of the π-π* band gap of graphene due to isoelectronic BN doping. As-grown films exhibit structural evolution from homogeneously dispersed small BN clusters to large sized BN domains with embedded diminutive graphene domains. The evolution is described in terms of competitive growth among h-BN and graphene domains with increasing BN concentration. The present results pave way for the development of band gap engineered BN doped graphene-based devices.


Applied Physics Letters | 2010

Effects of cathode buffer layers on the efficiency of bulk-heterojunction solar cells

Ching-Chun Chang; Chi-Feng Lin; Jian-Ming Chiou; Tzung-Han Ho; Yian Tai; Jiun-Haw Lee; Yang-Fang Chen; Juen-Kai Wang; Li-Chyong Chen; Kuei-Hsien Chen

The effects of cathode buffer layers on the bulk-heterojunction solar cells are investigated. Comparing with the device without buffer layer, obvious enhancements of Voc from 0.38 to 0.65 V and fill factor from 44% to 63% have been achieved by using 2 nm bathocuproine layer, which make the efficiency of the devices improved from 1.63% to 4.11%. Alternatively, lithium fluoride and/or tris(8-hydroxyquinolinato) aluminum were also introduced for clarification purpose. X-ray photoelectron spectroscopy study indicates that the degradation caused by the outer diffusion of carbon from active layers plays a crucial role in the device performance.


ACS Applied Materials & Interfaces | 2013

Self-Assembled Monolayer Immobilized Gold Nanoparticles for Plasmonic Effects in Small Molecule Organic Photovoltaic

Ming-Chung Chen; Yi-Ling Yang; Shin-Wen Chen; Jia-Han Li; Muluken Aklilu; Yian Tai

The aim of this study was to investigate the effect of gold nanoparticle (Au NP)-induced surface plasmons on the performance of organic photovoltaics (OPVs) that consist of copper phthalocyanine and fullerene as the active materials. The photon absorption can be enhanced by immobilization of surfactant-stabilized Au NPs on a self-assembled monolayer-modified indium tin oxide (ITO) electrode, and thus, the photocurrent as well as the power conversion efficiency (PCE) of these OPVs can be improved. Varying the density of the immobilized Au NPs in the devices provided no significant variation in the charge mobility but it did enhance the photocurrent. In addition, device simulation results demonstrated that the improvement in photocurrent was due to the enhancement of light absorption and the increase in charge separation, which was facilitated by the Au NPs. Overall, we attributed the improvement in PCE of OPVs to a localized surface plasmon resonance effect generated by the Au NPs.


ACS Applied Materials & Interfaces | 2014

A bifunctional copolymer additive to utilize photoenergy transfer and to improve hole mobility for organic ternary bulk-heterojunction solar cell.

Cheng-Yu Chi; Ming-Chung Chen; Der-Jang Liaw; Han-Yu Wu; Ying-Chi Huang; Yian Tai

To realize the high efficiency organic photovoltaics (OPVs), two critical requirements have to be fulfilled: (1) increasing the photon energy absorption range of the active layer, and (2) improving charge separation and transport in the active layer. This study reports the utilization of THC8, a novel fluorescence-based polymer containing propeller-shaped di-triarylamine and fluorene moieties in the active layer consisting of poly-3-hexylthiophene and [6,6]-phenyl-C61-butyric acid methyl ester to form a ternary bulk heterojunction. The results showed that the high absorbance and strong fluorescence of THC8 at 420 and 510 nm, respectively, broadened the spectral absorption of the OPV, possibly through Förster resonance energy transfer. In addition, the morphology of the device active layer was improved with the addition of a suitable amount of THC8. Consequently, the charge transport property of the active layer was improved. The best power conversion efficiency (PCE) of the device with THC8 was 3.88%, a 25% increase compared to the PCE of a pristine OPV.


Applied Physics Letters | 2011

Improving the efficiency of an organic solar cell by a polymer additive to optimize the charge carriers mobility

Ming-Chung Chen; Der-Jang Liaw; Wen-Hsiang Chen; Ying-Chi Huang; Jadab Sharma; Yian Tai

We investigate the effect of a high hole mobility triarylamine-based conjugated polymer on a bulk hetero-junction organic solar cell. We employed a polymer blend consisting of poly(3-hexylthiophene) (P3HT), [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), and poly(N-(4 -(9,9-dioctyl-fluoren-2-yl)phenyl)-N,N′,N′-triphenyl-l,4-phenylenediamine) (PFLAM) as active materials. The hole mobility of PFLAM is ∼10−3 cm2 V−1 s−1, which is similar to the electron mobility of PCBM. Addition of PFLAM improves the hole mobility of the photovoltaic cell augmenting the charge balance of the system. The overall efficiency gain for such a device is 34%.


Applied Physics Letters | 2011

Organic bistable memory based on Au nanoparticle/ZnO nanorods composite embedded in poly (vinylpyrrolidone) layer

Chin-Jung Lin; T. S. Pan; Ming-Chung Chen; Yi-Tsung Yang; Yian Tai; Yang-Fang Chen

Organic non-volatile memory devices were fabricated by embedding Au nanoparticle (NP)/ZnO nanorods (NRs) composite in an insulating poly (vinylpyrrolidone) as the active layer. The complete active materials were synthesized with an entire aqua solution process. Transmission electron microscopy images revealed that the Au NP/ZnO NRs composite exhibits an aster-like structure where Au NP is at the center while ZnO NRs are surrounding. Current-voltage (I-V) measurements of such device demonstrated electrical bistability with excellent on/off ratio of 4 × 103 under 1 V reading voltage. We attributed the high on/off ratio of the memory device to the large surface area of the Au NP/ZnO NRs composite where large amount of charges can be stored. In addition, the surrounding ZnO NRs act as spacers, which can effectively prevent the center gold nanoparticles from aggregation. Consequently, a low current leakage can be expected. Our study paved a way of employing a nanocomposite as a material for high performance or...


Journal of Physics D | 2011

Type-II heterojunction organic/inorganic hybrid non-volatile memory based on FeS2 nanocrystals embedded in poly(3-hexylthiophene)

Chin-Jung Lin; Di-Yan Wang; Yian Tai; You Ting Jiang; Ming-Chung Chen; Chia-Chun Chen; Yi-Tsung Yang; Yang-Fang Chen

Electrical bistable behaviour was demonstrated in memory devices based on n-type FeS2 nanocrystals (NCs) embedded in a p-type poly(3-hexylthiophene) (P3HT) matrix. An organic/inorganic hybrid non-volatile memory device with a type-II band alignment, fabricated by a spin-coating process, exhibited electrical bistable characteristics. The bistable behaviour of carrier transport can be well described through the space-charge-limited current model. The small amount of FeS2 NCs in this device serve as an excellent charge trapping medium arising from the type-II band alignment between FeS2 and P3HT. Our study suggests a new way to integrate non-volatile memory with other devices such as transistor or photovoltaic since the presented FeS2/P3HT offers a type-II band alignment.


Applied Physics Letters | 2008

Suppressing series resistance in organic solar cells by oxygen plasma treatment

Chien-Hung Lin; Shao-Chin Tseng; Yuan-Kui Liu; Yian Tai; Surojit Chattopadhyay; Chi-Feng Lin; Jiun-Haw Lee; Jih-Shang Hwang; Yung-Yu Hsu; Li-Chyong Chen; Wei-Chao Chen; Kuei-Hsien Chen

We demonstrate a low series resistance contact of gold (anode)/zinc-phthalocyznine in a reverse organic photovoltaic device aided by oxygen plasma treatment. The power conversion efficiency appreciated from 0.2% to 2.13%, post O2 plasma treatment, predominantly due to the reduction in the series resistance of the device. A depth profile of zinc from x-ray photoelectron spectroscopy study revealed a gold layer with graded zinc composition, instead of pure gold, to be an efficient hole-collector from the organic interface. The zinc alloying of the gold layer has clearly been promoted by the oxygen plasma treatment.


Journal of Materials Chemistry | 2013

Marked improvement in the stability of small molecule organic photovoltaics by interfacial modification using self-assembled monolayers to prevent indium diffusion into the active layer

Ming-Chung Chen; Yi-Shiang Chiou; Jian-Ming Chiu; Abebe Tedla; Yian Tai

This work describes a simple process to improve the stability of small molecule organic photovoltaics (OPVs) that use poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as the hole transport layer (HTL), without reducing the power conversion efficiency (PCE). We investigated the effect of self-assembled monolayers (SAMs) on the degradation of electrical properties caused by the diffusion of indium through the matrix commonly used in OPV devices. X-ray photoelectron spectroscopy depth profiles suggested that the acidic PEDOT:PSS etched the indium from the indium tin oxide (ITO) electrode, which resulted in indium diffusion into and chemical interaction with the active layer. Such behavior was responsible for the deterioration of the device. By inserting a self-assembled monolayer (SAM) with carboxylic acid functional groups at the interface between the ITO and PEDOT:PSS layers, such diffusion could be significantly suppressed. The PCE of the pristine OPV diminished to zero at 49 days post-fabrication under ambient conditions. However, the PCE of the SAM-modified device was reduced by only 30% over the same period, and only to 48% after 98 days. Moreover, the SAMs improved the interfacial electrical properties between the ITO and PEDOT:PSS layers, which maintained the PCE of the device. Our findings suggest a simple approach to improve the stability of OPVs that utilize PEDOT:PSS as the HTL.


Journal of Physical Chemistry Letters | 2012

Stacking Orientation Mediation of Pentacene and Derivatives for High Open-Circuit Voltage Organic Solar Cells.

Chi-Ta Chou; Chien-Hung Lin; Yian Tai; Chin-Hsin J. Liu; Li-Chyong Chen; Kuei-Hsien Chen

In this Letter, we investigated the effect of the molecular stacking orientation on the open circuit voltage (VOC) of pentacene-based organic solar cells. Two functionalized pentacenes, namely, 6,13-diphenyl-pentacene (DP-penta) and 6,13-dibiphenyl-4-yl-pentacene (DB-penta), were utilized. Different molecular stacking orientations of the pentacene derivatives from the pristine pentacene were identified by angle-dependent near-edge X-ray absorption fine structure measurements. It is concluded that pentacene molecules stand up on the substrate surface, while both functionalized pentacenes lie down. A significant increase of the VOC from 0.28 to 0.83 V can be achieved upon the utilization of functionalized pentacene, owing to the modulation of molecular stacking orientation, which induced a vacuum-level shift.

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Li-Chyong Chen

National Taiwan University

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Ming-Chung Chen

National Taiwan University of Science and Technology

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Der-Jang Liaw

National Taiwan University of Science and Technology

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Jadab Sharma

National Taiwan University of Science and Technology

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Jian-Ming Chiu

National Taiwan University of Science and Technology

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Sudeshna Kar

National Taiwan University of Science and Technology

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Yang-Fang Chen

National Taiwan University

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Chien-Hung Lin

National Taiwan University

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Jiun-Haw Lee

National Taiwan University

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