Yingda Dong

Selective Word Line Erase In 3D Non-Volatile Memory

THREE DIMENSIONAL NAND DEVICE WITH CHANNEL CONTACTING CONDUCTIVE SOURCE LINE AND METHOD OF MAKING THEREOF

Three-dimensional memory structure having a back gate electrode

Read With Look-Back Combined With Programming With Asymmetric Boosting In Memory

Three-dimensional non-volatile memory device having a silicide source line and method of making thereof

DEUTERIUM ANNEAL OF SEMICONDUCTOR CHANNELS IN A THREE-DIMENSIONAL MEMORY STRUCTURE

Word line-dependent and temperature-dependent pass voltage during programming

Three-dimensional memory structure having self-aligned drain regions and methods of making thereof

Amorphous Silicon Layer In Memory Device Which Reduces Neighboring Word Line Interference

Dynamic Tuning Of First Read Countermeasures