Yizhong Huang

1.06μm Q-switched ytterbium-doped fiber laser using few-layer topological insulator Bi 2 Se 3 as a saturable absorber

Passive Q-switching of an ytterbium-doped fiber (YDF) laser with few-layer topological insulator (TI) is, to the best of our knowledge, experimentally demonstrated for the first time. The few-layer TI: Bi₂Se₃ (2-4 layer thickness) is firstly fabricated by the liquid-phase exfoliation method, and has a low saturable optical intensity of 53 MW/cm² measured by the Z-scan technique. The optical deposition technique is used to induce the few-layer TI in the solution onto a fiber ferrule for successfully constructing the fiber-integrated TI-based saturable absorber (SA). By inserting this SA into the YDF laser cavity, stable Q-switching operation at 1.06 μm is achieved. The Q-switched pulses have the shortest pulse duration of 1.95 μs, the maximum pulse energy of 17.9 nJ and a tunable pulse-repetition-rate from 8.3 to 29.1 kHz. Our results indicate that the TI as a SA is also available at 1 μm waveband, revealing its potential as another broadband SA (like graphene).

1-, 1.5-, and 2-μm Fiber Lasers Q-Switched by a Broadband Few-Layer MoS 2 Saturable Absorber

We propose and demonstrate 1, 1.5, and 2 μm passively Q-switched fiber lasers by exploiting a few-layer Molybdenum sulfide (MoS2) polymer composite as broadband saturable absorber (SA), respectively. The few-layer MoS2 nanosheets are prepared by the liquid-phase exfoliation method, and are composited with polyvinyl alcohol (PVA). The PVA-MoS2 film is sandwiched between two fiber ferrules to form the fiber-compatible SA. The few-layer MoS2 not only shows good transparency from ultraviolet to mid-infrared spectral region, but also possesses the nonlinear saturable absorption. The modulation depth and saturation optical intensity of the PVA-MoS2 film are measured to be 1.6% and 13 MW/cm2 at 1566 nm by the balanced twin-detector technique, respectively. By further inserting the filmy PVA-MoS2 SA into the cavities of Yb-, Er- and Tm-doped fiber lasers, we achieve stable Q-switching operations at 1.06, 1.56, and 2.03 μm, respectively. The output characteristics of the Q-switched pulses at the three wavelengths have been investigated, respectively. The MoS2-based Q-switching enables the large pulse energy of ~1 μJ with a pulse width of 1.76 μs. This is, to the best of our knowledge, the first demonstration of MoS2 -based Q-switched fiber lasers in a wide wavelength range (from 1 to 2 μm). Our results experimentally confirm that the new-type 2-D material, few-layer MoS2, is a promising broadband SA to Q-switch fiber lasers covering all major wavelengths from near- to mid-infrared region.

Widely-tunable, passively Q-switched erbium-doped fiber laser with few-layer MoS2 saturable absorber

We propose and demonstrate a MoS2-based passively Q-switched Er-doped fiber laser with a wide tuning range of 1519.6-1567.7 nm. The few-layer MoS2 nano-platelets are prepared by the liquid-phase exfoliation method, and are then made into polymer-composite film to construct the fiber-compatible MoS2 saturable absorber (SA). It is measured at 1560 nm wavelength, that such MoS2 SA has the modulation depth of ∼ 2% and the saturable optical intensity of ∼ 10 MW/cm(2). By further inserting the filmy MoS2-SA into an Er-doped fiber laser, stable Q-switching operation with a 48.1 nm continuous tuning from S- to C-waveband is successfully achieved. The shortest pulse duration and the maximum pulse energy are 3.3 μs and 160 nJ, respectively. The repetition rate and the pulse duration under different operation conditions have been also characterized. To the best of our knowledge, it is the first demonstration of MoS2 Q-switched, widely-tunable fiber laser.

Topological-Insulator Passively Q-Switched Double-Clad Fiber Laser at 2

In this paper, Topological insulator (TI) Bi2Se3 as a saturable absorber (SA) is exploited to Q-switch fiber lasers at 2 μm wavelength for the first time. Few-layer TI:Bi 2Se 3 nanosheets in CS-HAc solution are prepared by the liquid-phase exfoliation method, and the thin 2-D structure with the thickness of 3-5 layers is well characterized. The open-aperture Z-scan experiment shows that the few-layer TI:Bi 2Se 3 has the saturable optical intensity of 41 MW/cm 2 at 800 nm and the modulation depth of 3.7%. The optical deposition technique is used to efficiently assemble the TI:Bi 2Se 3 nanosheets in the solution onto a fiber ferrule, therefore constructing a fiber-compatible TI-based SA (FC-TISA). By further inserting the FC-TISA into a diode-pumped Tm 3+-doped double-clad fiber laser (TM-DCFL), stable Q-switching operation at 1.98 μm is successfully achieved with the shortest pulse width of 4.18 μs and the tunable repetition rate from 8.4 to 26.8 kHz. In particular, the TM-DCFL can deliver large-energy Q-switched pulses with the pulse energy as high as 313 nJ (corresponding to average output power of 8.4 mW). Our results suggest that TI-based SA is suitable for pulsed laser operation in the eye-safe region of 2 μm, and potentially develops as an ultra-broadband photonics device.

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Bismuth selenide (Bi2Se3), a new topological insulator, has attracted much attention in recent years owing to its relatively simple band structure and large bulk band gap. Compared to bulk, few-layer Bi2Se3 is recently considered as a highly promising material. Here, we use a liquid-phase exfoliation method to prepare few-layer Bi2Se3 in N-methyl-2-pyrrolidone or chitosan acetic solution. The resulted few-layer Bi2Se3 dispersion demonstrates an interesting absorption in the visible light region, which is different from bulk Bi2Se3 without any absorption in this region. The absorption spectrum of few-layer Bi2Se3 depends on its size and layer number. At the same time, the nonlinear and saturable absorption of few-layer Bi2Se3 thin film in near infrared is also characterized well and further exploited to generate laser pulses by a passive Q-switching technique. Stable Q-switched operation is achieved with a lower pump threshold of 9.3 mW at 974 nm, pulse energy of 39.8 nJ and a wide range of pulse-repetition-rate from 6.2 to 40.1 kHz. Therefore, the few-layer Bi2Se3 may excite a potential applications in laser photonics and optoelectronic devices.

m Wavelength

We report on the first passively Q-switched Nd:YAlO₃ laser at ~1079.5 nm using MoS₂ as saturable absorber. The MoS₂ saturable absorber is fabricated by transferring the liquid-phase-exfoliated MoS₂ nanosheets onto a BK7 glass substrate. By inserting the glass MoS₂ saturable absorber into a plano-concave Nd:YAlO₃ laser cavity, we obtain a stable Q-switched laser operation with a maximum average output power of 0.26 W corresponding to a pulse repetition rate of 232.5 kHz, a pulse width of 227 ns and a pulse energy of about 1.11 μJ. The results experimentally confirm the promising application of the new kind of 2D material, few-layer MoS₂, in solid state lasers.

Preparation of few-layer bismuth selenide by liquid-phase-exfoliation and its optical absorption properties.

We propose and demonstrate multiwavelength dissipative soliton (DS) generation in an all-normal-dispersion ytterbium-doped fiber laser based on a graphene-deposited tapered fiber (GDTF) device. Due to the interaction of the graphene with the evanescent field on the taper, the GDTF device possesses the characteristics of both saturable absorption and polarizing effect. Therefore, this device not only initiates the mode-locking operation based on the saturable absorption, but also induces both the special spectral filtering and nonlinear polarization evolution for shaping pulses into DSs. Simultaneous triple-wavelength DS operation around 1035 nm is thus achieved with a pulse energy of 6.4 nJ and pulse duration of 74.6 ps. Moreover, the DS operation is very stable with an RF signal-to-noise ratio of 62.5 dB.

Passively Q-switched Nd:YAlO 3 nanosecond laser using MoS 2 as saturable absorber

We demonstrate the passive synchronization of two large-energy Q-switched all-fiber lasers, operating at 1.06 and 1.53 μm, by sharing a common monolayer graphene Q-switcher. The fiber-compatible Q-switcher is constructed by transferring a monolayer CVD graphene nanosheet onto a fiber ferrule. By exploiting the broadband saturable absorption of graphene and optimizing the cavity designs, both the large-energy Q-switched Yb and Er/Yb double-clad fiber lasers are successfully synchronized. The Q-switching synchronization can be realized in the broad repetition-rate range of 9-20 kHz by adjusting the pump powers of the two lasers. The maximum pulse energies are 5.30 μJ at 1.06 μm and 1.20 μJ at 1.53 μm, respectively, which is, to the best of our knowledge, the largest pulse energy obtained from graphene Q-switched all-fiber laser.

Multiwavelength Dissipative-Soliton Generation in Yb-Fiber Laser Using Graphene-Deposited Fiber-Taper

Two-dimensional (2D) materials are of tremendous interest to integrated photonics, given their singular optical characteristics spanning light emission, modulation, saturable absorption and nonlinear optics. To harness their optical properties, these atomically thin materials are usually attached onto prefabricated devices via a transfer process. Here, we present a new route for 2D material integration with planar photonics. Central to this approach is the use of chalcogenide glass, a multifunctional material that can be directly deposited and patterned on a wide variety of 2D materials and can simultaneously function as the light-guiding medium, a gate dielectric and a passivation layer for 2D materials. Besides achieving improved fabrication yield and throughput compared with the traditional transfer process, our technique also enables unconventional multilayer device geometries optimally designed for enhancing light–matter interactions in the 2D layers. Capitalizing on this facile integration method, we demonstrate a series of high-performance glass-on-graphene devices including ultra-broadband on-chip polarizers, energy-efficient thermo-optic switches, as well as graphene-based mid-infrared waveguide-integrated photodetectors and modulators.Exploiting the peculiar properties of graphene, a series of high-performance glass-on-graphene devices, such as polarizers, thermo-optic switches and mid-infrared waveguide-integrated photodetectors and modulators are realized.

Passive synchronization of 106- and 153-μm fiber lasers Q-switched by a common graphene SA

Mid-infrared fiber optical parametric oscillators (MIR FOPOs) based on the degenerate four-wave mixing (DFWM) of tellurite photonic crystal fibers (PCFs) are proposed and modeled for the first time. Using the DFWM coupled-wave equations, numerical simulations are performed to analyze the effects of tellurite PCFs, single-resonant cavity, and pump source on the MIR FOPO performances. The numerical results show that: (1) although a longer tellurite PCF can decrease the pump threshold of MIR FOPOs to a few watts only, the high conversion-efficiency of MIR idler usually requires a short-length optimum PCF with low loss; (2) compared with the single-pass DFWM configurations of the MIR fiber sources published previously, the stable oscillation of signal light in single-resonant cavity can significantly promote the MIR idler output efficiency. With a suggested tellurite PCF as parametric gain medium, the theoretical prediction indicates that such a MIR FOPO could obtain a wide MIR-tunable range and a high conversion efficiency of more than 10%.